1Gb, 3V Multiple I/O Serial Flash Memory
Features
Micron Serial NOR Flash Memory
3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase
MT25QL01GBBB
Options Marking
Features
Voltage
Stacked device (two 512Mb die)
2.73.6V L
SPI-compatible serial bus interface
Density
Single and double transfer rate (STR/DTR)
1Gb 01G
Clock frequency
Device stacking
133 MHz (MAX) for all protocols in STR
2 die stacked B
90 MHz (MAX) for all protocols in DTR
Device generation B
Dual/quad I/O commands for increased through-
Die revision B
put up to 90 MB/s
Pin configuration
Supported protocols: Extended, Dual and Quad I/O
HOLD# 1
both STR and DTR
RESET and HOLD# 8
Execute-in-place (XIP)
Sector Size
PROGRAM/ERASE SUSPEND operations
64KB E
Volatile and nonvolatile configuration settings
Packages JEDEC-standard, RoHS-
Software reset
compliant
Additional reset pin for selected part numbers
24-ball T-PBGA 05/6mm x 8mm 12
3-byte and 4-byte address modes enable memory
(TBGA24)
access beyond 128Mb
16-pin SOP2, 300 mils (SO16W, SF
Dedicated 64-byte OTP area outside main memory
SO16-Wide, SOIC-16)
Readable and user-lockable
W-PDFN-8 8mm x 6mm (MLP8 8mm W9
Erase capability
x 6mm)
Die Erase
Security features
Sector erase 64KB uniform granularity
Standard security 0
Subsector erase 4KB, 32KB granularity
Special options
Erase performance: 400KB/sec (64KB sector)
Standard S
Erase performance: 80KB/sec (4KB sub-sector)
Automotive A
Program performance: 2MB/sec
Operating temperature range
Security and write protection
From 40C to +85C IT
Volatile and nonvolatile locking and software
From 40C to +105C AT
write protection for each 64KB sector
From 40C to +125C UT
Nonvolatile configuration locking
Password protection
Hardware write protection: nonvolatile bits
(BP[3:0] and TB) define protected area size
Program/erase protection during power-up
CRC detects accidental changes to raw data
Electronic signature
JEDEC-standard 3-byte signature (BA21h)
Extended device ID: two additional bytes identify
device factory options
JESD47H-compliant
Minimum 100,000 ERASE cycles per sector
Data retention: 20 years (TYP)
PDF: CCMTD-1725822587-4056 Micron Technology, Inc. reserves the right to change products or specifications without notice.
1
mt25q-qlkt-L01-BBB-xxT.pdf - Rev. F 07/18 EN 2015 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.1Gb, 3V Multiple I/O Serial Flash Memory
Features
Part Number Ordering
Micron Serial NOR Flash devices are available in different configurations and densities. Verify valid part numbers
by using Microns part catalog search at www.micron.com. To compare features and specifications by device type,
visit www.micron.com/products. Contact the factory for devices not found.
Figure 1: Part Number Ordering Information
MT 25Q L xxx A BA 1 E SF - 0 S IT ES
Micron Technology Production Status
Blank = Production
Part Family ES = Engineering samples
25Q = SPI NOR QS = Qualification samples
Voltage Operating Temperature
L = 2.73.6V IT = 40C to +85C
U = 1.72.0V AT = 40C to +105C
UT = 40C to +125C
Density
064 = 64Mb (8MB)
Special Options
128 = 128Mb (16MB) S = Standard
256 = 256Mb (32MB)
A = Automotive grade AEC-Q100
512 = 512Mb (64MB)
01G = 1Gb (128MB)
Security Features
02G = 2Gb (256MB)
0 = Standard default security
Stack
Package Codes
A = 1 die/1 S#
12 = 24-ball T-PBGA, 05/6 x 8mm (5 x 5 array)
B = 2 die/1 S# 14 = 24-ball T-PBGA, 05/6 x 8mm (4 x 6 array)
C = 4 die/1 S#
SC = 8-pin SOP2, 150 mils
SE = 8-pin SOP2, 208 mils
Device Generation
SF = 16-pin SOP2, 300 mils
B = 2nd generation
W7 = 8-pin W-PDFN, 6 x 5mm
W9 = 8-pin W-PDFN, 8 x 6mm
1
Die Revision
5x = WLCSP package
A = Rev. A
B = Rev. B Sector size
E = 64KB sectors, 4KB and 32KB subsectors
Pin Configuration Option
1 = HOLD# pin
3 = RESET# pin
8 = RESET# and HOLD# pin
Note: 1. WLCSP package codes, package size, and availability are density-specific. Contact the factory for availability.
PDF: CCMTD-1725822587-4056 Micron Technology, Inc. reserves the right to change products or specifications without notice.
2
mt25q-qlkt-L01-BBB-xxT.pdf - Rev. F 07/18 EN 2015 Micron Technology, Inc. All rights reserved.