X-On Electronics has gained recognition as a prominent supplier of MT25QL01GBBB8ESF-0SIT TR NOR Flash across the USA, India, Europe, Australia, and various other global locations. MT25QL01GBBB8ESF-0SIT TR NOR Flash are a product manufactured by Micron. We provide cost-effective solutions for NOR Flash, ensuring timely deliveries around the world.

MT25QL01GBBB8ESF-0SIT TR Micron

MT25QL01GBBB8ESF-0SIT TR electronic component of Micron
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Part No.MT25QL01GBBB8ESF-0SIT TR
Manufacturer: Micron
Category: NOR Flash
Description: NOR Flash SPI FLASH NOR SLC 256MX4 SOIC DDP
Datasheet: MT25QL01GBBB8ESF-0SIT TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 12.9161 ea
Line Total: USD 12.92 
Availability - 62
Ship by Thu. 21 Nov to Tue. 26 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
62
Ship by Thu. 21 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 12.9161
10 : USD 11.2256
30 : USD 10.1933
100 : USD 9.3298

1034
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 15.2508
10 : USD 14.0915
25 : USD 13.3308
100 : USD 12.8116
250 : USD 12.4614
500 : USD 12.0267
1000 : USD 11.6524

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Series
Memory Size
Maximum Clock Frequency
Interface Type
Organisation
Timing Type
Data Bus Width
Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
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Memory Type
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Standard
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MT25QL01GBBB8ESF-0SIT TR from our NOR Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT25QL01GBBB8ESF-0SIT TR and other electronic components in the NOR Flash category and beyond.

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1Gb, 3V Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase MT25QL01GBBB Options Marking Features Voltage Stacked device (two 512Mb die) 2.73.6V L SPI-compatible serial bus interface Density Single and double transfer rate (STR/DTR) 1Gb 01G Clock frequency Device stacking 133 MHz (MAX) for all protocols in STR 2 die stacked B 90 MHz (MAX) for all protocols in DTR Device generation B Dual/quad I/O commands for increased through- Die revision B put up to 90 MB/s Pin configuration Supported protocols: Extended, Dual and Quad I/O HOLD# 1 both STR and DTR RESET and HOLD# 8 Execute-in-place (XIP) Sector Size PROGRAM/ERASE SUSPEND operations 64KB E Volatile and nonvolatile configuration settings Packages JEDEC-standard, RoHS- Software reset compliant Additional reset pin for selected part numbers 24-ball T-PBGA 05/6mm x 8mm 12 3-byte and 4-byte address modes enable memory (TBGA24) access beyond 128Mb 16-pin SOP2, 300 mils (SO16W, SF Dedicated 64-byte OTP area outside main memory SO16-Wide, SOIC-16) Readable and user-lockable W-PDFN-8 8mm x 6mm (MLP8 8mm W9 Erase capability x 6mm) Die Erase Security features Sector erase 64KB uniform granularity Standard security 0 Subsector erase 4KB, 32KB granularity Special options Erase performance: 400KB/sec (64KB sector) Standard S Erase performance: 80KB/sec (4KB sub-sector) Automotive A Program performance: 2MB/sec Operating temperature range Security and write protection From 40C to +85C IT Volatile and nonvolatile locking and software From 40C to +105C AT write protection for each 64KB sector From 40C to +125C UT Nonvolatile configuration locking Password protection Hardware write protection: nonvolatile bits (BP[3:0] and TB) define protected area size Program/erase protection during power-up CRC detects accidental changes to raw data Electronic signature JEDEC-standard 3-byte signature (BA21h) Extended device ID: two additional bytes identify device factory options JESD47H-compliant Minimum 100,000 ERASE cycles per sector Data retention: 20 years (TYP) PDF: CCMTD-1725822587-4056 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 mt25q-qlkt-L01-BBB-xxT.pdf - Rev. F 07/18 EN 2015 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.1Gb, 3V Multiple I/O Serial Flash Memory Features Part Number Ordering Micron Serial NOR Flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Part Number Ordering Information MT 25Q L xxx A BA 1 E SF - 0 S IT ES Micron Technology Production Status Blank = Production Part Family ES = Engineering samples 25Q = SPI NOR QS = Qualification samples Voltage Operating Temperature L = 2.73.6V IT = 40C to +85C U = 1.72.0V AT = 40C to +105C UT = 40C to +125C Density 064 = 64Mb (8MB) Special Options 128 = 128Mb (16MB) S = Standard 256 = 256Mb (32MB) A = Automotive grade AEC-Q100 512 = 512Mb (64MB) 01G = 1Gb (128MB) Security Features 02G = 2Gb (256MB) 0 = Standard default security Stack Package Codes A = 1 die/1 S# 12 = 24-ball T-PBGA, 05/6 x 8mm (5 x 5 array) B = 2 die/1 S# 14 = 24-ball T-PBGA, 05/6 x 8mm (4 x 6 array) C = 4 die/1 S# SC = 8-pin SOP2, 150 mils SE = 8-pin SOP2, 208 mils Device Generation SF = 16-pin SOP2, 300 mils B = 2nd generation W7 = 8-pin W-PDFN, 6 x 5mm W9 = 8-pin W-PDFN, 8 x 6mm 1 Die Revision 5x = WLCSP package A = Rev. A B = Rev. B Sector size E = 64KB sectors, 4KB and 32KB subsectors Pin Configuration Option 1 = HOLD# pin 3 = RESET# pin 8 = RESET# and HOLD# pin Note: 1. WLCSP package codes, package size, and availability are density-specific. Contact the factory for availability. PDF: CCMTD-1725822587-4056 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 mt25q-qlkt-L01-BBB-xxT.pdf - Rev. F 07/18 EN 2015 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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