MT25QL02GCBB8E12-0AAT Micron

2Gb, 3V Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase MT25QL02GCBB Options Marking Features Voltage Stacked device (four 512Mb die) 2.73.6V L SPI-compatible serial bus interface Density Single and double transfer rate (STR/DTR) 2Gb 02G Clock frequency Device stacking 133 MHz (MAX) for all protocols in STR 4 die stacked C 90 MHz (MAX) for all protocols in DTR Device generation B Dual/quad I/O commands for increased through- Die revision B put up to 90 MB/s Pin configuration Supported protocols in both STR and DTR RESET and HOLD 8 Extended I/O protocol Sector Size Dual I/O protocol 64KB E Quad I/O protocol Packages JEDEC-standard, RoHS- Execute-in-place (XIP) compliant PROGRAM/ERASE SUSPEND operations 24-ball T-PBGA 05/6mm x 8mm 12 Volatile and nonvolatile configuration settings (TBGA24) Software reset Standard security 0 Additional reset pin for selected part numbers Special options 3-byte and 4-byte address modes: enable memory Standard S access beyond 128Mb Automotive A Dedicated 64-byte OTP area outside main memory Operating temperature range Readable and user-lockable From 40C to +85C IT Permanent lock with PROGRAM OTP command From 40C to +105C AT Erase capability From 40C to +125C UT Die erase Sector erase 64KB uniform granularity Subsector erase 4KB, 32KB granularity Security and write protection Volatile and nonvolatile locking and software write protection for each 64KB sector Nonvolatile configuration locking Password protection Hardware write protection: nonvolatile bits (BP 3:0 and TB) define protected area size Program/erase protection during power-up CRC detects accidental changes to raw data Electronic signature JEDEC-standard 3-byte signature (BA22h) Extended device ID: two additional bytes identify device factory options JESD47H-compliant Minimum 100,000 ERASE cycles per sector Data retention: 20 years (TYP) 09005aef8661dcd4 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 mt25q-qlkt-L02-CBB-S-IT.pdf - Rev. G 05/19 EN 2015 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.2Gb, 3V Multiple I/O Serial Flash Memory Features Part Number Ordering Micron Serial NOR Flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Part Number Ordering Information MT 25Q L xxx A BA 1 E SF - 0 S IT ES Micron Technology Production Status Blank = Production Part Family ES = Engineering samples 25Q = SPI NOR QS = Qualification samples Voltage Operating Temperature L = 2.73.6V IT = 40C to +85C U = 1.72.0V AT = 40C to +105C UT = 40C to +125C Density 064 = 64Mb (8MB) Special Options 128 = 128Mb (16MB) S = Standard 256 = 256Mb (32MB) A = Automotive grade AEC-Q100 512 = 512Mb (64MB) 01G = 1Gb (128MB) Security Features 02G = 2Gb (256MB) 0 = Standard default security Stack Package Codes A = 1 die/1 S 12 = 24-ball T-PBGA, 05/6 x 8mm (5 x 5 array) B = 2 die/1 S 14 = 24-ball T-PBGA, 05/6 x 8mm (4 x 6 array) C = 4 die/1 S SC = 8-pin SOP2, 150 mils SE = 8-pin SOP2, 208 mils Device Generation SF = 16-pin SOP2, 300 mils B = 2nd generation W7 = 8-pin W-PDFN, 6 x 5mm W9 = 8-pin W-PDFN, 8 x 6mm 1 Die Revision 5x = WLCSP package A = Rev. A B = Rev. B Sector size E = 64KB sectors, 4KB and 32KB subsectors Pin Configuration Option 1 = HOLD pin 3 = RESET pin 8 = RESET and HOLD pin Note: 1. WLCSP package codes, package size, and availability are density-specific. Contact the factory for availability. 09005aef8661dcd4 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 mt25q-qlkt-L02-CBB-S-IT.pdf - Rev. G 05/19 EN 2015 Micron Technology, Inc. All rights reserved.