X-On Electronics has gained recognition as a prominent supplier of PC48F4400P0VB0EF NOR Flash across the USA, India, Europe, Australia, and various other global locations. PC48F4400P0VB0EF NOR Flash are a product manufactured by Micron. We provide cost-effective solutions for NOR Flash, ensuring timely deliveries around the world.

PC48F4400P0VB0EF Micron

PC48F4400P0VB0EF electronic component of Micron
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Part No.PC48F4400P0VB0EF
Manufacturer: Micron
Category: NOR Flash
Description: NOR Flash Parallel/Serial 1.8V 512Mbit 32M x 16bit 100ns 64-Pin EZBGA T/R
Datasheet: PC48F4400P0VB0EF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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We are delighted to provide the PC48F4400P0VB0EF from our NOR Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PC48F4400P0VB0EF and other electronic components in the NOR Flash category and beyond.

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256Mb and 512Mb (256Mb/256Mb), P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, PC48F4400P0VB0Ex, PF48F4000P0ZB/TQEx Security Features One-time programmable register: 64 OTP bits, High performance programmed with unique information from Mi- 100ns initial access for Easy BGA cron 2112 OTP bits available for customer pro- 110ns initial access for TSOP gramming 25ns 16-word asychronous page read mode Absolute write protection: V = V PP SS 52 MHz (Easy BGA) with zero WAIT states and Power-transition erase/program lockout 17ns clock-to-data output synchronous burst Individual zero-latency block locking read mode Individual block lock-down 4-, 8-, 16-, and continuous word options for burst Password access mode Software Buffered enhanced factory programming (BEFP) 25s (TYP) program suspend at 2 MB/s (TYP) using a 512-word buffer 25s (TYP) erase suspend 1.8V buffered programming at 1.14 MB/s (TYP) Flash Data Integrator optimized using a 512-word buffer Basic command set and extended function Inter- Architecture face (EFI) command set compatible MLC: highest density at lowest cost Common flash interface Asymmetrically blocked architecture Density and Packaging Four 32KB parameter blocks: top or bottom con- 56-lead TSOP package (256Mb only) figuration 64-ball Easy BGA package (256Mb, 512Mb) 128KB main blocks QUAD+ and SCSP packages (256Mb, 512Mb) Blank check to verify an erased block 16-bit wide data bus Voltage and power Quality and reliabilty V (core) voltage: 1.7V to 2.0V CC JESD47 compliant V (I/O) voltage: 1.7V to 3.6V CCQ Operating temperature: 40C to +85C Standy current: 65A (TYP) for 256Mb Minimum 100,000 ERASE cycles per block 52 MHz continuous synchronous read current: 65nm process technology 21mA (TYP), 24mA (MAX) PDF: 09005aef84566799 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 p30 65nm MLC 256Mb-512mb.pdf - Rev. D 9/15 EN 2013 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.256Mb and 512Mb (256Mb/256Mb), P30-65nm Features Discrete and MCP Part Numbering Information Devices are shipped from the factory with memory content bits erased to 1. For available options, such as pack- ages or for further information, contact your Micron sales representative. Part numbers can be verified at www.mi- cron.com. Feature and specification comparison by device type is available at www.micron.com/products. Con- tact the factory for devices not found. Note: Not all part numbers listed here are available for ordering. Table 1: Discrete Part Number Information Part Number Category Category Details Package JS = 56-lead TSOP, lead free PC = 64-ball Easy BGA, lead-free RC = 64-ball Easy BGA, leaded Product Line 28F = Micron Flash memory Density 256 = 256Mb Product Family P30 (VCC = 1.7 to 2.0V VCCQ = 1.7 to 3.6V) Parameter Location B/T = Bottom/Top parameter Lithography F = 65nm Features * Note: 1. The last digit is assigned randomly to cover packaging media, features, or other specific configuration infor- mation. Sample part number: JS28F256P30BF* PDF: 09005aef84566799 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 p30 65nm MLC 256Mb-512mb.pdf - Rev. D 9/15 EN 2013 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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