PF48F4400P0VBQEF Micron

256Mb and 512Mb (256Mb/256Mb), P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, PC48F4400P0VB0Ex, PF48F4000P0ZB/TQEx Security Features One-time programmable register: 64 OTP bits, High performance programmed with unique information from Mi- 100ns initial access for Easy BGA cron 2112 OTP bits available for customer pro- 110ns initial access for TSOP gramming 25ns 16-word asychronous page read mode Absolute write protection: V = V PP SS 52 MHz (Easy BGA) with zero WAIT states and Power-transition erase/program lockout 17ns clock-to-data output synchronous burst Individual zero-latency block locking read mode Individual block lock-down 4-, 8-, 16-, and continuous word options for burst Password access mode Software Buffered enhanced factory programming (BEFP) 25s (TYP) program suspend at 2 MB/s (TYP) using a 512-word buffer 25s (TYP) erase suspend 1.8V buffered programming at 1.14 MB/s (TYP) Flash Data Integrator optimized using a 512-word buffer Basic command set and extended function Inter- Architecture face (EFI) command set compatible MLC: highest density at lowest cost Common flash interface Asymmetrically blocked architecture Density and Packaging Four 32KB parameter blocks: top or bottom con- 56-lead TSOP package (256Mb only) figuration 64-ball Easy BGA package (256Mb, 512Mb) 128KB main blocks QUAD+ and SCSP packages (256Mb, 512Mb) Blank check to verify an erased block 16-bit wide data bus Voltage and power Quality and reliabilty V (core) voltage: 1.7V to 2.0V CC JESD47 compliant V (I/O) voltage: 1.7V to 3.6V CCQ Operating temperature: 40C to +85C Standy current: 65A (TYP) for 256Mb Minimum 100,000 ERASE cycles per block 52 MHz continuous synchronous read current: 65nm process technology 21mA (TYP), 24mA (MAX) PDF: 09005aef84566799 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 p30 65nm MLC 256Mb-512mb.pdf - Rev. D 9/15 EN 2013 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.256Mb and 512Mb (256Mb/256Mb), P30-65nm Features Discrete and MCP Part Numbering Information Devices are shipped from the factory with memory content bits erased to 1. For available options, such as pack- ages or for further information, contact your Micron sales representative. Part numbers can be verified at www.mi- cron.com. Feature and specification comparison by device type is available at www.micron.com/products. Con- tact the factory for devices not found. Note: Not all part numbers listed here are available for ordering. Table 1: Discrete Part Number Information Part Number Category Category Details Package JS = 56-lead TSOP, lead free PC = 64-ball Easy BGA, lead-free RC = 64-ball Easy BGA, leaded Product Line 28F = Micron Flash memory Density 256 = 256Mb Product Family P30 (VCC = 1.7 to 2.0V VCCQ = 1.7 to 3.6V) Parameter Location B/T = Bottom/Top parameter Lithography F = 65nm Features * Note: 1. The last digit is assigned randomly to cover packaging media, features, or other specific configuration infor- mation. Sample part number: JS28F256P30BF* PDF: 09005aef84566799 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 p30 65nm MLC 256Mb-512mb.pdf - Rev. D 9/15 EN 2013 Micron Technology, Inc. All rights reserved.