X-On Electronics has gained recognition as a prominent supplier of PZ28F064M29EWHA NOR Flash across the USA, India, Europe, Australia, and various other global locations. PZ28F064M29EWHA NOR Flash are a product manufactured by Micron. We provide cost-effective solutions for NOR Flash, ensuring timely deliveries around the world.

PZ28F064M29EWHA Micron

PZ28F064M29EWHA electronic component of Micron
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Part No.PZ28F064M29EWHA
Manufacturer: Micron
Category: NOR Flash
Description: NOR Flash Parallel 3V/3.3V 64M-bit 8M x 8/4M x 16 60ns 48-Pin BGA Tray
Datasheet: PZ28F064M29EWHA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.892 ea
Line Total: USD 3.89 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 3.892
250 : USD 3.0113
500 : USD 2.6164
1000 : USD 2.3202
2500 : USD 2.1104
5000 : USD 1.9993
10000 : USD 1.9746

   
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We are delighted to provide the PZ28F064M29EWHA from our NOR Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PZ28F064M29EWHA and other electronic components in the NOR Flash category and beyond.

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32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory JR28F032M29EWXX PZ28F032M29EWXX JS28F064M29EWXX PC28F064M29EWXX JR28F064M29EWXX PZ28F064M29EWXX JS28F128M29EWXX PC28F128M29EWXX RC28F128M29EWXX V /WP pin protection PP Features V voltage on V to accelerate programming PPH PP Supply voltage performance V = 2.73.6V (program, erase, read) CC Protects highest/lowest block (H/L uniform) or V = 1.653.6V (I/O buffers) CCQ top/bottom two blocks (T/B boot) Asynchronous random or page read Software protection Page size: 8 words or 16 bytes Volatile protection Page access: 25ns Nonvolatile protection Random access (V = 2.73.6V): 60ns (BGA) CCQ Password protection 70ns (TSOP) Password access Buffer program: 256-word MAX program buffer Extended memory block Program time 128-word (256-byte) block for permanent secure 0.56s per byte (1.8 MB/s TYP when using 256- identification word buffer size in buffer program without V ) PPH Program or lock implemented at the factory or by 0.31s per byte (3.2 MB/s TYP when using 256- the customer word buffer size in buffer program with V ) PPH Low-power consumption: Standby mode Memory organization JESD47H-compliant 32Mb: 64 main blocks, 64KB each, or eight 8KB 100,000 minimum ERASE cycles per block boot blocks (top or bottom) and 63 main blocks, Data retention: 20 years (TYP) 64KB each 65nm single-bit cell process technology 64Mb: 128 main blocks, 64KB each, or eight 8KB Packages (JEDEC-standard) boot blocks (top or bottom) and 127 main blocks, 56-pin TSOP (128Mb, 64Mb) 64 KB each 48-pin TSOP (64Mb, 32Mb) 128Mb: 128 main blocks, 128KB each 64-ball FBGA (128Mb, 64Mb) Program/erase controller 48-ball BGA (64Mb, 32Mb) Embedded byte/word program algorithms Green packages available Program/erase suspend and resume capability RoHS-compliant READ operation on another block during a PRO- Halogen-free GRAM SUSPEND operation Operating temperature READ or PROGRAM operation on one block dur- Ambient: 40C to +85C ing an ERASE SUSPEND operation on another block BLANK CHECK operation to verify an erased block Unlock bypass, block erase, chip erase, and write to buffer capability Fast buffered/batch programming Fast block and chip erase PDF: 09005aef84dc44a7 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 m29ew 32Mb-128Mb.pdf - Rev. C 2/18 EN 2012 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash Features Part Numbering Information This product is available with the prelocked extended memory block. Devices are shipped from the factory with memory content bits erased to 1. For a list of available options, such as packages or high/low protection, or for further information, contact your Micron sales representative. Table 1: Part Number Information Part Number Category Category Details Package JS = 56-pin TSOP, 14mm x 20mm, lead-free, halogen-free, RoHS-compliant PC = 64-ball Fortified BGA, 11mm x 13mm, lead-free, halogen-free, RoHS-compliant RC = 64-ball Fortified BGA, 11mm x 13mm, leaded JR = 48-pin TSOP, 12mm x 20mm, lead-free, halogen-free, RoHS-compliant PZ = 48-ball BGA, 6mm x 8mm, lead-free, halogen-free, RoHS-compliant Product designator 28F = Parallel NOR interface Density 128 = 128Mb 064 = 64Mb 032 = 32Mb Device type M29EW = Embedded Flash memory (3V core, page read) Device function H = Highest block protected by V /WP uniform block PP L = Lowest block protected by V /WP uniform block PP B = Bottom boot bottom two blocks protected by V /WP PP T = Top boot top two blocks protected by V /WP PP Features A/B/F/X or an asterisk (*) = Combination of features, including packing media, security features, and specific customer request information Valid M29EW Part Number Combinations Table 2: Standard Part Numbers by Density, Medium, and Package Package JS PC RC JR PZ 32Mb Tray JR28F032M29EWHA PZ28F032M29EWHA JR28F032M29EWLA PZ28F032M29EWLA JR28F032M29EWBA PZ28F032M29EWBA JR28F032M29EWTA PZ28F032M29EWTA Tape JR28F032M29EWBB PZ28F032M29EWBB and JR28F032M29EWTB reel PDF: 09005aef84dc44a7 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 m29ew 32Mb-128Mb.pdf - Rev. C 2/18 EN 2012 Micron Technology, Inc. All rights reserved. Density Medium

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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