512Mb, 3V Multiple I/O Serial Flash Memory
Features
Micron Serial NOR Flash Memory
3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase
MT25QL512ABB
Options Marking
Features
Voltage
SPI-compatible serial bus interface
2.73.6V L
Single and double transfer rate (STR/DTR)
Density
Clock frequency
512Mb 512
133 MHz (MAX) for all protocols in STR
Device stacking
90 MHz (MAX) for all protocols in DTR
Monolithic A
Dual/quad I/O commands for increased through-
Device generation B
put up to 90 MB/s
Die revision B
Supported protocols in both STR and DTR
Pin configuration
Extended I/O protocol
HOLD# 1
Dual I/O protocol
RESET# and HOLD# 8
Quad I/O protocol
Sector Size
Execute-in-place (XIP)
64KB E
PROGRAM/ERASE SUSPEND operations
Packages JEDEC-standard, RoHS-
Volatile and nonvolatile configuration settings
compliant
Software reset
24-ball T-PBGA 05/6mm 8mm 12
Reset pin available
(TBGA24)
3-byte and 4-byte address modes enable memory
16-pin SOP2, 300 mil SF
access beyond 128Mb
(SO16W, SO16-Wide, SOIC-16)
Dedicated 64-byte OTP area outside main memory
W-PDFN-8 8mm 6mm W9
Readable and user-lockable
(MLP8 8mm 6mm)
Permanent lock with PROGRAM OTP command
Security features
Erase capability
Standard security 0
Bulk erase
Special options
Sector erase 64KB uniform granularity
Standard S
Subsector erase 4KB, 32KB granularity
Automotive A
Security and write protection
Operating temperature range
Volatile and nonvolatile locking and software
From 40C to +85C IT
write protection for each 64KB sector
From 40C to +105C AT
Nonvolatile configuration locking
From 40C to +125C UT
Password protection
Hardware write protection: nonvolatile bits
(BP[3:0] and TB) define protected area size
Program/erase protection during power-up
CRC detects accidental changes to raw data
Electronic signature
JEDEC-standard 3-byte signature (BA20h)
Extended device ID: two additional bytes identify
device factory options
JESD47H-compliant
Minimum 100,000 ERASE cycles per sector
Data retention: 20 years (TYP)
09005aef864f8d51 Micron Technology, Inc. reserves the right to change products or specifications without notice.
1
MT25Q_QLKT_L_512_ABB_0.pdf - Rev. F 1/18 EN 2013 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.512Mb, 3V Multiple I/O Serial Flash Memory
Features
Part Number Ordering
Micron Serial NOR Flash devices are available in different configurations and densities. Verify valid part numbers
by using Microns part catalog search at www.micron.com. To compare features and specifications by device type,
visit www.micron.com/products. Contact the factory for devices not found.
Figure 1: Part Number Ordering Information
MT 25Q L xxx A BA 1 E SF - 0 S IT ES
Micron Technology Production Status
Blank = Production
Part Family ES = Engineering samples
25Q = SPI NOR QS = Qualification samples
Voltage Operating Temperature
L = 2.73.6V IT = 40C to +85C
U = 1.72.0V AT = 40C to +105C
UT = 40C to +125C
Density
064 = 64Mb (8MB)
Special Options
128 = 128Mb (16MB) S = Standard
256 = 256Mb (32MB)
A = Automotive grade AEC-Q100
512 = 512Mb (64MB)
01G = 1Gb (128MB)
Security Features
02G = 2Gb (256MB)
0 = Standard default security
Stack
Package Codes
A = 1 die/1 S#
12 = 24-ball T-PBGA, 05/6 x 8mm (5 x 5 array)
B = 2 die/1 S# 14 = 24-ball T-PBGA, 05/6 x 8mm (4 x 6 array)
C = 4 die/1 S#
SC = 8-pin SOP2, 150 mil
SE = 8-pin SOP2, 208 mil
Device Generation
SF = 16-pin SOP2, 300 mil
B = 2nd generation
W7 = 8-pin W-PDFN, 6 x 5mm
W9 = 8-pin W-PDFN, 8 x 6mm
1
Die Revision
5x = WLCSP package
A = Rev. A
B = Rev. B Sector size
E = 64KB sectors, 4KB and 32KB sub-sectors
Pin Configuration Option
1 = HOLD# pin
3 = RESET# pin
8 = RESET# and HOLD# pin
Note: 1. WLCSP package codes, package size, and
availability are density-specific. Contact the
factory for availability.
09005aef864f8d51 Micron Technology, Inc. reserves the right to change products or specifications without notice.
2
MT25Q_QLKT_L_512_ABB_0.pdf - Rev. F 1/18 EN 2013 Micron Technology, Inc. All rights reserved.