512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM
Features
DDR2 SDRAM SODIMM
MT8HTF6464HDZ 512MB
MT8HTF12864HDZ 1GB
Figure 1: 200-Pin SODIMM (MO-224 R/C A)
Features
Module height: 30mm (1.18in)
200-pin, small-outline dual in-line memory module
(SODIMM)
Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, or PC2-6400
512MB (64 Meg x 64), 1GB (128 Meg x 64)
V = 1.8V
DD
V = 1.73.6V
DDSPD
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
4n-bit prefetch architecture
Options Marking
Multiple internal device banks for concurrent opera-
Operating temperature
tion
Commercial (0C T +70C) D
A
Programmable CAS latency (CL)
1
Industrial (40C T +85C) T
A
Posted CAS additive latency (AL)
Package
t
WRITE latency = READ latency - 1 CK
200-pin DIMM (halogen-free) Z
2
Frequency/CL
Programmable burst lengths (BL): 4 or 8
2.5ns @ CL = 6 (DDR2-800) -800
Adjustable data-output drive strength
3.0ns @ CL = 5 (DDR2-667) -667
64ms, 8192-cycle refresh
1. Contact Micron for industrial temperature
Notes:
On-die termination (ODT)
module offerings.
Serial presence detect (SPD) with EEPROM
2. CL = CAS (READ) latency.
Gold edge contacts
Dual rank
Halogen-free
Table 1: Key Timing Parameters
Data Rate (MT/s) t t t
Speed Industry RCD RP RC
Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 (ns) (ns) (ns)
-80E PC2-6400 800 800 533 400 12.5 12.5 55
-800 PC2-6400 800 667 533 400 15 15 55
-667 PC2-5300 667 553 400 15 15 55
-53E PC2-4200 553 400 15 15 55
-40E PC2-3200 400 400 15 15 55
PDF: 09005aef831ec770 Micron Technology, Inc. reserves the right to change products or specifications without notice.
1
htf8c64_128x64hdz.pdf - Rev. E 4/14 EN 2008 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM
Features
Table 2: Addressing
Parameter 512MB 1GB
Refresh count 8K 8K
Row address 8K A[12:0] 8K A[12:0]
Device bank address 4 BA[1:0] 8 BA[2:0]
Device configuration 512Mb (32 Meg x16) 1Gb (64 Meg x 16)
Column address 1K A[9:0] 1K A[9:0]
Module rank address 2 S#[1:0] 2 S#[1:0]
Table 3: Part Numbers and Timing Parameters 512MB Modules
1
Base device: MT47H32M16, 512Mb DDR2 SDRAM
Module Module Memory Clock/ Clock Cycles
2 t t
Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP)
MT8HTF6464HDZ-800__ 512MB 64 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT8HTF6464HTZ-800__ 512MB 64 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT8HTF6464HDZ-667__ 512MB 64 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5
MT8HTF6464HTZ-667__ 512MB 64 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5
Table 4: Part Numbers and Timing Parameters 1GB Modules
1
Base device: MT47H64M16, 1Gb DDR2 SDRAM
Module Module Memory Clock/ Clock Cycles
2 t t
Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP)
MT8HTF12864HDZ-800__ 1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT8HTF12864HTZ-800__ 1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT8HTF12864HDZ-667__ 1GB 128 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5
MT8HTF12864HTZ-667__ 1GB 128 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5
Notes: 1. The data sheet for the base device can be found on Microns Web site.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions.
Consult factory for current revision codes. Example: MT8HTF12864HDZ-800M1.
PDF: 09005aef831ec770 Micron Technology, Inc. reserves the right to change products or specifications without notice.
2
htf8c64_128x64hdz.pdf - Rev. E 4/14 EN 2008 Micron Technology, Inc. All rights reserved.