X-On Electronics has gained recognition as a prominent supplier of MT8JTF51264AZ-1G6E1 Memory Modules across the USA, India, Europe, Australia, and various other global locations. MT8JTF51264AZ-1G6E1 Memory Modules are a product manufactured by Micron. We provide cost-effective solutions for Memory Modules, ensuring timely deliveries around the world.

MT8JTF51264AZ-1G6E1 Micron

MT8JTF51264AZ-1G6E1 electronic component of Micron
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See Product Specifications
Part No.MT8JTF51264AZ-1G6E1
Manufacturer: Micron
Category: Memory Modules
Description: DDR3 SDRAM UDIMM WITH MODULE DENSITY 4 GB
Datasheet: MT8JTF51264AZ-1G6E1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2: USD 84.6669 ea
Line Total: USD 169.33 
Availability - 0
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2
Multiples : 1
2 : USD 84.6669

   
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We are delighted to provide the MT8JTF51264AZ-1G6E1 from our Memory Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT8JTF51264AZ-1G6E1 and other electronic components in the Memory Modules category and beyond.

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1GB, 2GB, 4GB (x64, SR) 240-Pin DDR3 UDIMM Features DDR3 SDRAM UDIMM MT8JTF12864AZ 1GB MT8JTF25664AZ 2GB MT8JTF51264AZ 4GB Figure 1: 240-Pin UDIMM (MO-269 R/C A) Features Module height: 30mm (1.181in) DDR3 functionality and operations supported as defined in the component data sheet 240-pin, unbuffered dual in-line memory module (UDIMM) Fast data transfer rates: PC3-14900, PC3-12800, PC3-10600, PC3-8500, or PC3-6400 Options Marking 1GB (128 Meg x 64), 2GB (256 Meg x 64), or 4GB (512 1 Operating temperature Meg x 64) Commercial (0C T +70C) None A V = V = 1.5V 0.075V DD DDQ Industrial (40C T +85C) I A V = 3.0V to 3.6V DDSPD Package Reset pin for improved system stability 240-pin DIMM (halogen-free) Z Nominal and dynamic on-die termination (ODT) for Frequency/CAS latency data, strobe, and mask signals 1.07ns CL = 13 (DDR3-1866) -1G9 1.25ns CL = 11 (DDR3-1600) -1G6 Single-rank 1.5ns CL = 9 (DDR3-1333) -1G4 Fixed burst chop (BC) of 4 and burst length (BL) of 8 1.87ns CL = 7 (DDR3-1066) -1G1 via the mode register set (MRS) Adjustable data-output drive strength 1. Contact Micron for industrial temperature Note: module offerings. Serial presence-detect (SPD) EEPROM Gold edge contacts Halogen-free Fly-by topology Terminated control, command, and address bus Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry CL = CL = CL = RCD RP RC Grade Nomenclature 13 11 10 CL = 9 CL = 8 CL = 7 CL = 6 CL = 5 (ns) (ns) (ns) -1G9 PC3-14900 1866 1600 1333 1333 1066 1066 800 667 13.125 13.125 47.125 -1G6 PC3-12800 1600 1333 1333 1066 1066 800 667 13.125 13.125 48.125 -1G4 PC3-10600 1333 1333 1066 1066 800 667 13.125 13.125 49.125 -1G1 PC3-8500 1066 1066 800 667 13.125 13.125 50.625 -1G0 PC3-8500 1066 800 667 15 15 52.5 -80B PC3-6400 800 667 15 15 52.5 PDF: 09005aef837d3ecf Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 jtf8c128 256 512x64az.pdf - Rev. H 04/13 EN 2009 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.1GB, 2GB, 4GB (x64, SR) 240-Pin DDR3 UDIMM Features Table 2: Addressing Parameter 1GB 2GB 4GB Refresh count 8K 8K 8K Row address 16K A 13:0 32K A 14:0 64K A 15:0 Device bank address 8 BA 2:0 8 BA 2:0 8 BA 2:0 Device configuration 1Gb (128 Meg x 8) 2Gb (256 Meg x 8) 4Gb (512 Meg x 8) Column address 1K A 9:0 1K A 9:0 1K A 9:0 Module rank address 1 (S0 ) 1 (S0 ) 1 (S0 ) Table 3: Part Numbers and Timing Parameters 1GB Modules 1 Base device: MT41J128M8, 1Gb DDR3 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL - RCD - RP) MT8JTF12864A(I)Z-1G9 1GB 128 Meg x 64 14.9 GB/s 1.07ns/1866 MT/s 13-13-13 MT8JTF12864A(I)Z-1G6 1GB 128 Meg x 64 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT8JTF12864A(I)Z-1G4 1GB 128 Meg x 64 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 MT8JTF12864A(I)Z-1G1 1GB 128 Meg x 64 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 Table 4: Part Numbers and Timing Parameters 2GB Modules 1 Base device: MT41J256M8, 2Gb DDR3 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL - RCD - RP) MT8JTF25664A(I)Z-1G9 2GB 256 Meg x 64 14.9 GB/s 1.07ns/1866 MT/s 13-13-13 MT8JTF25664A(I)Z-1G6 2GB 256 Meg x 64 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT8JTF25664A(I)Z-1G4 2GB 256 Meg x 64 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 MT8JTF25664A(I)Z-1G1 2GB 256 Meg x 64 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 Table 5: Part Numbers and Timing Parameters 4GB Modules 1 Base device: MT41J512M8, 4Gb DDR3 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL - RCD - RP) MT8JTF51264A(I)Z-1G9 4GB 512 Meg x 64 14.9 GB/s 1.07ns/1866 MT/s 13-13-13 MT8JTF51264A(I)Z-1G6 4GB 512 Meg x 64 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT8JTF51264A(I)Z-1G4 4GB 512 Meg x 64 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 MT8JTF51264A(I)Z-1G1 4GB 512 Meg x 64 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 Notes: 1. Data sheets for the base device parts can be found on Microns Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con- sult factory for current revision codes. Example: MT8JTF51264AZ-1G4E1. PDF: 09005aef837d3ecf Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 jtf8c128 256 512x64az.pdf - Rev. H 04/13 EN 2009 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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