MT8LSDT3264HY-13EG1 Micron

64MB, 128MB, 256MB (x64, DR) 144-PIN SDRAM SODIMM MT8LSDT864(L)H(I) 64MB SMALL-OUTLINE MT8LSDT1664(L)H(I) 128MB MT8LSDT3264(L)H(I) 256MB SDRAM MODULE For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/modules Features Figure 1: 144-Pin SODIMM (MO-190) PC100- and PC133-compliant, 144-pin, small- Standard 1.25in. (31.75mm) outline, dual in-line memory module (SODIMM) Utilizes 125 MHz and 133 MHz SDRAM components Unbuffered 64MB (8 Meg x 64), 128MB (16 Meg x 64), and 256MB (32 Meg x 64) Single +3.3V power supply Fully synchronous all signals registered on positive edge of system clock Internal pipelined operation column address can be changed every clock cycle Internal SDRAM banks for hiding row access/ precharge Options Marking Programmable burst lengths: 1, 2, 4, 8, or full page Self Refresh Current Auto Precharge and Auto Refresh Modes Standard None Self Refresh Mode: Standard and Low Power 1, 2 Low-Power L 64MB and 128MB: 64ms, 4,096-cycle (15.625s) Operating Temperature Range refresh interval 256MB: 64ms, 8,192-cycle Commercial (0C to +70C) None (7.8125s) refresh interval 1, 2 Industrial (-40C to +85C) I LVTTL-compatible inputs and outputs Package Serial Presence-Detect (SPD) Gold edge contacts 144-pin SODIMM (standard) G 1 144-pin SODIMM (lead-free) Y Table 1: Timing Parameters Memory Clock/CAS Latency CL = CAS (READ) latency 7.5ns (133 MHz)/CL = 2 -13E 7.5ns (133 MHz)/CL = 3 -133 ACCESS TIME MODULE CLOCK SETUP HOLD 10ns (100 MHz)/CL = 2 -10E MARKING FREQUENCY CL = 2 CL = 3 TIME TIME NOTE: 1. Contact Micron for product availability. -13E 133 MHz 5.4ns 1.5ns 0.8ns 2. Low Power and Industrial Temperature options -133 133 MHz 5.4ns 1.5ns 0.8ns not available concurrently Industrial Tempera- -10E 100 MHz 6ns 2ns 1ns ture option available in -133 speed only. Table 2: Address Table 64MB 128MB 256MB Refresh Count 4K 4K 8K Device Banks 4 (BA0, BA1) 4 (BA0, BA1) 4 (BA0, BA1) Device Configuration 64Mb (4 Meg x16) 128Mb (8 Meg x 16) 256Mb (16 Meg x 16) 4K (A0A11) 4K (A0A11) 8K (A0A12) Row Addressing Column Addressing 256 (A0A7) 512 (A0A8) 512 (A0A8) Module Ranks 2 (S0 , S1 ) 2 (S0 , S1 ) 2 (S0 , S1 ) 09005aef8077d63a SD8C8 16 32x64HG.fm - Rev. C 6/04 EN 1 2004 Micron Technology, Inc. All rights reserved. PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. 64MB, 128MB, 256MB (x64, DR) 144-PIN SDRAM SODIMM Table 3: Part Numbers SYSTEM 1 PART NUMBER MODULE DENSITY CONFIGURA-TION BUS SPEED MT8LSDT864(L)HG-13E 64MB 8 Meg x 64 133 MHz MT8LSDT864(L)HY-13E 64MB 8 Meg x 64 133 MHz MT8LSDT864(L)H(I)G-133 64MB 8 Meg x 64 133 MHz MT8LSDT864(L)H(I)Y-133 64MB 8 Meg x 64 133 MHz 64MB 8 Meg x 64 100 MHz MT8LSDT864(L)HG-10E MT8LSDT864(L)HY-10E 64MB 8 Meg x 64 100 MHz MT8LSDT1664(L)HG-13E 128MB 16 Meg x 64 133 MHz MT8LSDT1664(L)HY-13E 128MB 16 Meg x 64 133 MHz MT8LSDT1664(L)H(I)G-133 128MB 16 Meg x 64 133 MHz 128MB 16 Meg x 64 133 MHz MT8LSDT1664(L)H(I)Y-133 MT8LSDT1664(L)HG-10E 128MB 16 Meg x 64 100 MHz MT8LSDT1664(L)HY-10E 128MB 16 Meg x 64 100 MHz MT8LSDT3264(L)HG-13E 256MB 32 Meg x 64 133 MHz MT8LSDT3264(L)HY-13E 256MB 32 Meg x 64 133 MHz 256MB 32 Meg x 64 133 MHz MT8LSDT3264(L)H(I)G-133 MT8LSDT3264(L)H(I)Y-133 256MB 32 Meg x 64 133 MHz MT8LSDT3264(L)HG-10E 256MB 32 Meg x 64 100 MHz MT8LSDT3264(L)HY-10E 256MB 32 Meg x 64 100 MHz NOTE: 1. The designators for component and PCB revision are the last two characters of each part number. Consult factory for current revision codes. Example: MT8LSDT1664HG-133B1 09005aef8077d63a Micron Technology, Inc., reserves the right to change products or specifications without notice. SD8C8 16 32x64HG.fm - Rev. C 6/04 EN 2 2004 Micron Technology, Inc. All rights reserved.