512MB, 1GB, 2GB (x72, SR) 240-Pin DDR2 SDRAM UDIMM
Features
DDR2 SDRAM UDIMM
MT9HTF6472AZ 512MB
MT9HTF12872AZ 1GB
MT9HTF25672AZ 2GB
Figure 1: 240-Pin UDIMM (MO-237 R/C F)
Features
Module height: 30mm (1.18in)
240-pin, unbuffered dual in-line memory module
Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, or PC2-6400
512MB (64 Meg x 72), 1GB (128 Meg x 72), 2GB (256
Meg x 72)
V = V = 1.8V
DD DDQ
Options Marking
V = 1.73.6V
DDSPD
1
Operating temperature
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
Commercial (0C T +70C) None
A
Differential data strobe (DQS, DQS#) option
Industrial (40C T +85C) I
A
4n-bit prefetch architecture
Package
240-pin DIMM (halogen-free) Z
Multiple internal device banks for concurrent
2
Frequency/CL
operation
2.5ns @ CL = 5 (DDR2-800) -80E
Programmable CAS latency (CL)
2.5ns @ CL = 6 (DDR2-800) -800
Posted CAS additive latency (AL)
3.0ns @ CL = 5 (DDR2-667) -667
t
WRITE latency = READ latency - 1 CK
1. Contact Micron for industrial temperature
Notes:
Programmable burst lengths (BL): 4 or 8
module offerings.
Adjustable data-output drive strength
2. CL = CAS (READ) latency.
64ms, 8192-cycle refresh
On-die termination (ODT)
Serial presence detect (SPD) with EEPROM
Gold edge contacts
Single rank
Table 1: Key Timing Parameters
Data Rate (MT/s) t t t
Speed Industry RCD RP RC
Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 (ns) (ns) (ns)
-80E PC2-6400 800 800 533 400 12.5 12.5 55
-800 PC2-6400 800 667 533 400 15 15 55
-667 PC2-5300 667 553 400 15 15 55
-53E PC2-4200 553 400 15 15 55
-40E PC2-3200 400 400 15 15 55
PDF: 09005aef83b961d6 Micron Technology, Inc. reserves the right to change products or specifications without notice.
1
htf9c64_128_256x72az Rev. D 4/14 EN 2009 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.512MB, 1GB, 2GB (x72, SR) 240-Pin DDR2 SDRAM UDIMM
Features
Table 2: Addressing
Parameter 512MB 1GB 2GB
Refresh count 8K 8K 8K
Row address 16K A[13:0] 16K A[13:0] 32K A[14:0]
Device bank address 4 BA[1:0] 8 BA[2:0] 8 BA[2:0]
Device configuration 512Mb (64 Meg x 8) 1Gb (128 Meg x 8) 2Gb (256 Meg x 8)
Column address 1K A[9:0] 1K A[9:0] 1K A[9:0]
Module rank address 1 S0# 1 S0# 1 S0#
Table 3: Part Numbers and Timing Parameters 512MB Modules
1
Base device: MT47H64M8, 512Mb DDR2 SDRAM
Module Module Memory Clock/ Clock Cycles
2 t t
Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP)
MT9HTF6472A(I)Z-80E__ 512MB 64 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT9HTF6472A(I)Z-800__ 512MB 64 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT9HTF6472A(I)Z-667__ 512MB 64 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5
Table 4: Part Numbers and Timing Parameters 1GB Modules
1
Base device: MT47H128M8, 1Gb DDR2 SDRAM
Module Module Memory Clock/ Clock Cycles
2 t t
Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP)
MT9HTF12872A(I)Z-80E__ 1GB 128 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT9HTF12872A(I)Z-800__ 1GB 128 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT9HTF12872A(I)Z-667__ 1GB 128 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5
Table 5: Part Numbers and Timing Parameters 2GB Modules
1
Base device: MT47H256M8, 2Gb DDR2 SDRAM
Module Module Memory Clock/ Clock Cycles
2 t t
Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP)
MT9HTF25672A(I)Z-80E__ 2GB 256 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT9HTF25672A(I)Z-800__ 2GB 256 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT9HTF25672A(I)Z-667__ 2GB 256 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5
Notes: 1. The data sheet for the base device can be found on Microns Web site.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions.
Consult factory for current revision codes. Example: MT9HTF12872AZ-80EM1.
PDF: 09005aef83b961d6 Micron Technology, Inc. reserves the right to change products or specifications without notice.
2
htf9c64_128_256x72az Rev. D 4/14 EN 2009 Micron Technology, Inc. All rights reserved.