MT8KTF51264AZ-1G9P1 Micron

1GB, 2GB, 4GB (x64, SR) 240-Pin 1.35V DDR3L UDIMM Features 1.35V DDR3L SDRAM UDIMM MT8KTF12864AZ 1GB MT8KTF25664AZ 2GB MT8KTF51264AZ 4GB Figure 1: 240-Pin UDIMM (MO-269 R/C-A) Features Module height: 30mm (1.181in) DDR3L functionality and operations supported as defined in the component data sheet 240-pin, unbuffered dual in-line memory module (UDIMM) Fast data transfer rates: PC3-14900, PC3-12800, or PC3-10600 Figure 2: 240-Pin UDIMM (MO-269 R/C-A1) 1GB (128 Meg x 64), 2GB (256 Meg x 64), or 4GB (512 Module Height: 30.0mm (1.181in) Meg x 64) V = V = 1.35V (1.2381.45V) DD DDQ V = V = 1.5V (1.4251.575V) DD DDQ Backward-compatible to V = V = 1.5V 0.075V DD DDQ V = 3.03.6V DDSPD Reset pin for improved system stability Options Marking Nominal and dynamic on-die termination (ODT) for Operating temperature data, strobe, and mask signals Commercial (0C T 70C) None A Package Single-rank 240-pin DIMM (halogen-free) Z Fixed burst chop (BC) of 4 and burst length (BL) of 8 Frequency/CAS latency via the mode register set (MRS) 1.07ns CL = 13 (DDR3-1866) -1G9 Adjustable data-output drive strength 1.25ns CL = 11 (DDR3-1600) -1G6 Serial presence-detect (SPD) EEPROM 1.5ns CL = 9 (DDR3-1333) -1G4 Gold edge contacts Halogen-free Fly-by topology Terminated control, command, and address bus Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry CL = CL = CL = RCD RP RC Grade Nomenclature 13 11 10 CL = 9 CL = 8 CL = 7 CL = 6 CL = 5 (ns) (ns) (ns) -1G9 PC3-14900 1866 1600 1333 1333 1066 1066 800 667 13.125 13.125 47.125 -1G6 PC3-12800 1600 1333 1333 1066 1066 800 667 13.125 13.125 48.125 -1G4 PC3-10600 1333 1333 1066 1066 800 667 13.125 13.125 49.125 -1G1 PC3-8500 1066 1066 800 667 13.125 13.125 50.625 -1G0 PC3-8500 1066 800 667 15 15 52.5 -80B PC3-6400 800 667 15 15 52.5 PDF: 09005aef8413b5fe Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 ktf8c128 256 512x64az.pdf Rev. K 9/15 EN 2010 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.1GB, 2GB, 4GB (x64, SR) 240-Pin 1.35V DDR3L UDIMM Features Table 2: Addressing Parameter 1GB 2GB 4GB Refresh count 8K 8K 8K Row address 16K A 13:0 32K A 14:0 64K A 15:0 Device bank address 8 BA 2:0 8 BA 2:0 8 BA 2:0 Device configuration 1Gb (128 Meg x 8) 2Gb (256 Meg x 8) 4Gb (512 Meg x 8) Column address 1K A 9:0 1K A 9:0 1K A 9:0 Module rank address 1 S0 1 S0 1 S0 Table 3: Part Numbers and Timing Parameters 1GB Modules 1 Base device: MT41K128M8, 1Gb DDR3L SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT8KTF12864AZ-1G6 1GB 128 Meg x 64 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT8KTF12864AZ-1G4 1GB 128 Meg x 64 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 Table 4: Part Numbers and Timing Parameters 2GB Modules 1 Base device: MT41K256M8, 2Gb DDR3L SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT8KTF25664AZ-1G6 2GB 256 Meg x 64 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT8KTF25664AZ-1G4 2GB 256 Meg x 64 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 Table 5: Part Numbers and Timing Parameters 4GB Modules 1 Base device: MT41K512M8, 4Gb DDR3L SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT8KTF51264AZ-1G9 4GB 512 Meg x 64 14.9 GB/s 1.07ns/1866 MT/s 13-13-13 MT8KTF51264AZ-1G6 4GB 512 Meg x 64 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 Notes: 1. Data sheets for the base device parts can be found on Microns Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT8KTF51264AZ-1G9P1. PDF: 09005aef8413b5fe Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 ktf8c128 256 512x64az.pdf Rev. K 9/15 EN 2010 Micron Technology, Inc. All rights reserved.