2GB, 4GB (x72, DR) 240-Pin DDR2 SDRAM FBDIMM
Features
DDR2 SDRAM FBDIMM
MT36HTF25672FZ 2GB
MT36HTF51272FZ 4GB
Figure 1: 240-Pin FBDIMM (MO-256 R/C E)
Features
Module height: 30.35mm (1.19in)
DDR2 functionality and operations supported as de-
fined in the component data sheet
240-pin, fully buffered dual in-line memory module
(FBDIMM)
Fast data transfer rates: PC2-6400, PC2-5300, or
PC2-4200
Options Marking
2GB (256 Meg x 72), 4GB (512 Meg x 72)
Package
3.2 Gb/s, 4 Gb/s, or 4.8 Gb/s link transfer rates
240-pin DIMM (halogen-free) Z
High-speed, 1.5V differential, point-to-point link
Frequency/CAS latency
between the host controller and advanced memory
2.5ns @ CL = 5 (DDR2-800) -80E
buffer (AMB)
3.0ns @ CL = 5 (DDR2-667) -667
Fault-tolerant; can work around a bad bit lane in
each direction
Features (Continued)
High-density scaling with up to eight FBDIMM
Mixed-signal built-in self-test (MBIST) and inter-
devices per channel
rupt-driven built-in self-test (IBIST) test functions
SMBus interface to AMB for configuration register
Transparent mode for DRAM test support
access
V = V = 1.8V for DRAM
DD DDQ
In-band and out-of-band command access
V = 0.9V SDRAM command and address termina-
REF
Deterministic protocol
tion
Enables memory controller to optimize DRAM
V = 1.5V for AMB
CC
accesses for maximum performance
V = 33.6V for AMB and EEPROM
DDSPD
Delivers precise control and repeatable memory
Serial presence-detect (SPD) with EEPROM
behavior
Gold edge contacts
Automatic DDR2 SDRAM bus and channel calibra-
Dual-rank
tion
Supports 95C operation with 2X refresh
Transmitter de-emphasis to reduce intersymbol in-
terference (ISI)
Table 1: Key Timing Parameters
Data Rate (MT/s)
Speed
t t t
Grade Industry Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 RCD (ns) RP (ns) RC (ns)
-80E PC2-6400 800 800 533 400 12.5 12.5 55
-667 PC2-5300 667 533 400 15 15 55
-53E PC2-4200 533 400 15 15 55
PDF: 09005aef83d491e1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
1
htf36c256_512x72fz.pdf - Rev. C 10/12 EN 2009 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.2GB, 4GB (x72, DR) 240-Pin DDR2 SDRAM FBDIMM
Features
Table 2: Addressing
Parameter 2GB 4GB
Refresh count 8K 8K
Device bank address 4 BA[1:0] 8 BA[2:0]
Device page size per bank 1KB 1KB
Device configuration 512Mb (128 Meg x 4) 1Gb (256 Meg x 4)
Row address 16K A[13:0] 16K A[13:0]
Column address 2K A[11, 9:0] 2K A[11, 9:0]
Module rank address 2 S#[1:0] 2 S#[1:0]
Table 3: Part Numbers and Timing Parameters 2GB
1
Base device: MT47H128M4, 512Mb DDR2 SDRAM
Module Module Memory Clock/ Clock Cycles Link Transfer
2 t t
Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) Rate
MT36HTF25672FZ-80E__ 2GB 256 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5 4.8 GT/s
MT36HTF25672FZ-667__ 2GB 256 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5 4.0 GT/s
Table 4: Part Numbers and Timing Parameters 4GB
1
Base device: MT47H256M4, 1Gb DDR2 SDRAM
Module Module Memory Clock/ Clock Cycles Link Transfer
2 t t
Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) Rate
MT36HTF51272FZ-80E__ 4GB 512 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5 4.8 GT/s
MT36HTF51272FZ-667__ 4GB 512 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5 4.0 GT/s
Notes: 1. The data sheet for the base device can be found on Microns Web site.
2. All part numbers end with a four-place code (not shown) that designates component, PCB, and AMB revi-
sions. Consult factory for current revision codes. Example: MT36HTF51272FZ-80EH1D6.
PDF: 09005aef83d491e1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
2
htf36c256_512x72fz.pdf - Rev. C 10/12 EN 2009 Micron Technology, Inc. All rights reserved.