MT36JDZS1G72PDZ-1G1D1 Micron

4GB, 8GB (x72, ECC, QR) 240-Pin DDR3 VLP RDIMM Features DDR3 SDRAM VLP RDIMM MT36JDZS51272PDZ 4GB MT36JDZS1G72PDZ 8GB Figure 1: 240-Pin VLP RDIMM Features (MO-269 R/C V) DDR3 functionality and operations supported as PCB height: 18.75mm (0.738in) defined in the component data sheet 240-pin, very low-profile registered dual in-line U1 U2 U3 U4 U5 U7 U8 U9 U10 U6 memory module (VLP RDIMM) Fast data transfer rates: PC3-10600, PC3-8500, or PC3-6400 Options Marking 4GB (256 Meg x 8), 8GB (512 Meg x 8) 1 Operating temperature V = 1.5V 0.075V Commercial (0C T None DD A +70C) V = +3.0V to +3.6V DDSPD Industrial (40C T I A Supports ECC error detection and correction +85C) Nominal and dynamic on-die termination (ODT) for Package data and strobe signals 240-pin DIMM (halogen-free) Z Quad rank, using 2Gb or 4Gb TwinDie devices Frequency/CAS latency 8 internal device banks 1.5ns CL = 9 (DDR3-1333) -1G4 Fixed burst chop (BC) of 4 and burst length (BL) of 8 1.87ns CL = 7 (DDR3-1066) -1G1 via the mode register set (MRS) 1. Contact Micron for industrial temperature Note: 2 On-board I C temperature sensor with integrated module offerings. serial presence-detect (SPD) EEPROM Full module heat spreader Gold edge contacts Halogen-free Fly-by topology Terminated control, command, and address bus Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 10 CL = 9 CL = 8 CL = 7 CL = 6 CL = 5 (ns) (ns) (ns) -1G4 PC3-10600 1333 1333 1066 1066 800 667 13.125 13.125 49.125 -1G1 PC3-8500 1066 1066 800 667 13.125 13.125 50.625 -1G0 PC3-8500 1066 800 667 15 15 52.5 -80B PC3-6400 800 667 15 15 52.5 PDF: 09005aef83a18588 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 jdzs36c512 1gx72pdz.pdf - Rev. E 4/13EN 2009 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.4GB, 8GB (x72, ECC, QR) 240-Pin DDR3 VLP RDIMM Features Table 2: Addressing Parameter 4GB 8GB Refresh count 8K 8K Row address 16K A 13:0 32K A 14:0 Device bank address 8 BA 2:0 8 BA 2:0 Device configuration 2Gb TwinDie (256 Meg x 8) 4Gb TwinDie (512 Meg x 8) Column address 1K A 9:0 1K A 9:0 Module rank address 4 S 3:0 4 S 3:0 Table 3: Part Numbers and Timing Parameters 4GB Modules 1 Base device: MT41J256M8THR, 2Gb DDR3 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT36JDZS51272PDZ-1G4 4GB 512 Meg x 72 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 MT36JDZS51272PDZ-1G1 4GB 512 Meg x 72 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 Table 4: Part Numbers and Timing Parameters 8GB Modules 1 Base device: MT41J512M8THU, 4Gb DDR3 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT36JDZS1G72PDZ-1G4 8GB 1 Gig x 72 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 MT36JDZS1G72PDZ-1G1 8GB 1 Gig x 72 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 Notes: 1. The data sheet for the base device can be found on Microns Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT36JDZS1G72PDZ-1G1A1. PDF: 09005aef83a18588 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 jdzs36c512 1gx72pdz.pdf - Rev. E 4/13EN 2009 Micron Technology, Inc. All rights reserved.