2Gb, 4GB, 8GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM Features DDR2 SDRAM RDIMM MT36HTF25672PZ 2GB MT36HTF51272PZ 4GB MT36HTF1G72PZ 8GB Figure 1: 240-Pin RDIMM (MO-256 R/C L) Features 240-pin, registered dual in-line memory module Module height: 30.0mm (1.181in) Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 2GB (256 Meg x 72), 4GB (512 Meg x 72), 8GB (1 Gig x 72) Supports ECC error detection and correction V = V = +1.8V DD DDQ Options Marking V = 1.73.6V DDSPD Parity P JEDEC-standard 1.8V I/O (SSTL 18-compatible) Operating temperature Differential data strobe (DQS, DQS ) option Commercial (0C T +70C) None C 1 4n-bit prefetch architecture Industrial (40C T +85C) I C Package Dual rank 240-pin DIMM (halogen-free) Z Multiple internal device banks for concurrent 2 Frequency/CL operation 2.5ns CL = 5 (DDR2-800) -80E Programmable CAS latency (CL) 2.5ns CL = 6 (DDR2-800) -800 Posted CAS additive latency (AL) 3.0ns CL = 5 (DDR2-667) -667 t WRITE latency = READ latency - 1 CK 1. Contact Micron for industrial temperature Notes: Programmable burst lengths (BL): 4 or 8 module offerings. Adjustable data-output drive strength 2. CL = CAS (READ) latency registered mode 64ms, 8192-cycle refresh will add one clock cycle to CL. On-die termination (ODT) Serial presence-detect (SPD) with EEPROM Gold edge contacts Halogen-free Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 (ns) (ns) (ns) -80E PC2-6400 800 800 533 400 12.5 12.5 55 -800 PC2-6400 800 667 533 400 15 15 55 -667 PC2-5300 667 553 400 15 15 55 -53E PC2-4200 553 400 15 15 55 -40E PC2-3200 400 400 15 15 55 PDF: 09005aef83d65c27 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 htf36c256 512 1gx72pz.pdf - Rev. E 4/14 EN 2009 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.2Gb, 4GB, 8GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM Features Table 2: Addressing Parameter 2GB 4GB 8GB Refresh count 8K 8K 8K Row address 16K A 13:0 16K A 13:0 32K A 14:0 Device bank address 4 BA 1:0 8 BA 2:0 8 BA 2:0 Device configuration 512Mb (128 Meg x4) 1Gb (256 Meg x 4) 2Gb (512 Meg x 4) Column address 2K A 11, 9:0 2K A 11, 9:0 2K A 11, 9:0 Module rank address 2 S 1:0 2 S 1:0 2 S 1:0 Table 3: Part Numbers and Timing Parameters 2GB 1 Base device: MT47H128M4, 512Mb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT36HTF25672P(I)Z-80E 2GB 512 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT36HTF25672P(I)Z-800 2GB 512 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT36HTF25672P(I)Z-667 2GB 512 Meg x 72 5.3 GB/s 3.0ns/800 MT/s 5-5-5 Table 4: Part Numbers and Timing Parameters 4GB 1 Base device: MT47H256M4, 1Gb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT36HTF51272P(I)Z-80E 4GB 512 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT36HTF51272P(I)Z-800 4GB 512 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT36HTF51272P(I)Z-667 4GB 512 Meg x 72 5.3 GB/s 3.0ns/800 MT/s 5-5-5 Table 5: Part Numbers and Timing Parameters 8GB 1 Base device: MT47H512M4, 2Gb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT36HTF1G72P(I)Z-80E 8GB 1 Gig x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT36HTF1G72P(I)Z-800 8GB 1 Gig x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT36HTF1G72P(I)Z-667 8GB 1 Gig x 72 5.3 GB/s 3.0ns/800 MT/s 5-5-5 Notes: 1. Data sheets for the base device can be found on Microns Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con- sult factory for current revision codes. Example: MT36HTF51272PZ-80EM1. PDF: 09005aef83d65c27 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 htf36c256 512 1gx72pz.pdf - Rev. E 4/14 EN 2009 Micron Technology, Inc. All rights reserved.