4GB, 8GB (x72, ECC, DR) 240-Pin DDR2 SDRAM VLP RDIMM Features DDR2 SDRAM VLP RDIMM MT36HVS51272PZ 4GB MT36HVS1G72PZ 8GB Figure 1: 240-Pin RDIMM (ATCA Form Factor) Features 240-pin, very low-profile, registered dual in-line Module height: 17.9mm (0.7in) memory module (VLP RDIMM), ATCA form factor Fast data transfer rates: PC2-6400, PC2-5300, PC2-4200, or PC2-3200 4GB (512 Meg x 72), 8GB (1 Gig x 72) Options Marking Supports ECC error detection and correction Parity P Dual-rank using 2Gb or 4Gb TwinDie devices Operating temperature V = V = 1.8V DD DDQ Commercial (0C T +70C) None A V = 1.73.6V DDSPD 1 Industrial (40C T +85C) I A JEDEC-standard 1.8V I/O (SSTL 18-compatible) Package Differential data strobe (DQS, DQS ) option 240-pin DIMM (halogen-free) Z 2 Frequency/CL 4n-bit prefetch architecture 2.5ns CL = 5 (DDR2-800) -80E Multiple internal device banks for concurrent 2.5ns CL = 6 (DDR2-800) -800 operation 3.0ns CL = 6 (DDR2-667) -667 Programmable CAS latency (CL) 1. Contact Micron for industrial temperature Notes: Posted CAS additive latency (AL) module offerings. t WRITE latency = READ latency - 1 CK 2. CL = CAS (READ) latency registered mode Programmable burst lengths (BL): 4 or 8 will add one clock cycle to CL. Adjustable data-output drive strength 64ms, 8192-cycle refresh On-die termination (ODT) Serial presence-detect (SPD) with EEPROM Halogen-free Gold edge contacts Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 (ns) (ns) (ns) -80E PC2-6400 800 800 533 400 12.5 12.5 55 -800 PC2-6400 800 667 533 400 15 15 55 -667 PC2-5300 667 553 400 15 15 55 -53E PC2-4200 553 400 15 15 55 -40E PC2-3200 400 400 15 15 55 PDF: 09005aef83c60a84 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 hvs36c512 1gx72pz.pdf - Rev. E 4/14 EN 2009 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.4GB, 8GB (x72, ECC, DR) 240-Pin DDR2 SDRAM VLP RDIMM Features Table 2: Addressing Parameter 4GB 8GB Refresh count 8K 8K Row address 16K A 13:0 32K A 14:0 Device bank address 8 BA 2:0 8 BA 2:0 Device configuration 2Gb TwinDie (512 Meg x 4) 4Gb TwinDie (1 Gig x 4) Column address 2K A 11, 9:0 2K A 11, 9:0 Module rank address 2 S 1:0 2 S 1:0 Table 3: Part Numbers and Timing Parameters 4GB 1 Base device: MT47H512M4, 2Gb TwinDie DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT36HVS51272P(I)Z-80E 4GB 512 Meg x 72 6.2 GB/s 2.5ns/800 MT/s 5-5-5 MT36HVS51272P(I)Z-800 4GB 512 Meg x 72 6.2 GB/s 2.5ns/800 MT/s 6-6-6 MT36HVS51272P(I)Z-667 4GB 512 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Table 4: Part Numbers and Timing Parameters 8GB 1 Base device: MT47H1G4, 4Gb TwinDie DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT36HVS1G72P(I)Z-80E 8GB 1 Gig x 72 6.2 GB/s 2.5ns/800 MT/s 5-5-5 MT36HVS1G72P(I)Z-800 8GB 1 Gig x 72 6.2 GB/s 2.5ns/800 MT/s 6-6-6 MT36HVS1G72P(I)Z-667 8GB 1 Gig x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Notes: 1. Data sheets for the base device can be found on Microns web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con- sult factory for current revision codes. Example: MT36HVS51272PZ-80EM1. PDF: 09005aef83c60a84 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 hvs36c512 1gx72pz.pdf - Rev. E 4/14 EN 2009 Micron Technology, Inc. All rights reserved.