MT25QL512ABB8E12-0AAT TR Micron

512Mb, 3V Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase MT25QL512ABB Options Marking Features Voltage SPI-compatible serial bus interface 2.73.6V L Single and double transfer rate (STR/DTR) Density Clock frequency 512Mb 512 133 MHz (MAX) for all protocols in STR Device stacking 90 MHz (MAX) for all protocols in DTR Monolithic A Dual/quad I/O commands for increased through- Device generation B put up to 90 MB/s Die revision B Supported protocols in both STR and DTR Pin configuration Extended I/O protocol HOLD 1 Dual I/O protocol RESET and HOLD 8 Quad I/O protocol Sector Size Execute-in-place (XIP) 64KB E PROGRAM/ERASE SUSPEND operations Packages JEDEC-standard, RoHS- Volatile and nonvolatile configuration settings compliant Software reset 24-ball T-PBGA 05/6mm 8mm 12 Reset pin available (TBGA24) 3-byte and 4-byte address modes enable memory 16-pin SOP2, 300 mil SF access beyond 128Mb (SO16W, SO16-Wide, SOIC-16) Dedicated 64-byte OTP area outside main memory W-PDFN-8 8mm 6mm W9 Readable and user-lockable (MLP8 8mm 6mm) Permanent lock with PROGRAM OTP command Security features Erase capability Standard security 0 Bulk erase Special options Sector erase 64KB uniform granularity Standard S Subsector erase 4KB, 32KB granularity Automotive A Security and write protection Operating temperature range Volatile and nonvolatile locking and software From 40C to +85C IT write protection for each 64KB sector From 40C to +105C AT Nonvolatile configuration locking From 40C to +125C UT Password protection Hardware write protection: nonvolatile bits (BP 3:0 and TB) define protected area size Program/erase protection during power-up CRC detects accidental changes to raw data Electronic signature JEDEC-standard 3-byte signature (BA20h) Extended device ID: two additional bytes identify device factory options JESD47H-compliant Minimum 100,000 ERASE cycles per sector Data retention: 20 years (TYP) 09005aef864f8d51 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 MT25Q QLKT L 512 ABB 0.pdf - Rev. F 1/18 EN 2013 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.512Mb, 3V Multiple I/O Serial Flash Memory Features Part Number Ordering Micron Serial NOR Flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Part Number Ordering Information MT 25Q L xxx A BA 1 E SF - 0 S IT ES Micron Technology Production Status Blank = Production Part Family ES = Engineering samples 25Q = SPI NOR QS = Qualification samples Voltage Operating Temperature L = 2.73.6V IT = 40C to +85C U = 1.72.0V AT = 40C to +105C UT = 40C to +125C Density 064 = 64Mb (8MB) Special Options 128 = 128Mb (16MB) S = Standard 256 = 256Mb (32MB) A = Automotive grade AEC-Q100 512 = 512Mb (64MB) 01G = 1Gb (128MB) Security Features 02G = 2Gb (256MB) 0 = Standard default security Stack Package Codes A = 1 die/1 S 12 = 24-ball T-PBGA, 05/6 x 8mm (5 x 5 array) B = 2 die/1 S 14 = 24-ball T-PBGA, 05/6 x 8mm (4 x 6 array) C = 4 die/1 S SC = 8-pin SOP2, 150 mil SE = 8-pin SOP2, 208 mil Device Generation SF = 16-pin SOP2, 300 mil B = 2nd generation W7 = 8-pin W-PDFN, 6 x 5mm W9 = 8-pin W-PDFN, 8 x 6mm 1 Die Revision 5x = WLCSP package A = Rev. A B = Rev. B Sector size E = 64KB sectors, 4KB and 32KB sub-sectors Pin Configuration Option 1 = HOLD pin 3 = RESET pin 8 = RESET and HOLD pin Note: 1. WLCSP package codes, package size, and availability are density-specific. Contact the factory for availability. 09005aef864f8d51 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 MT25Q QLKT L 512 ABB 0.pdf - Rev. F 1/18 EN 2013 Micron Technology, Inc. All rights reserved.