MT25TL512HBA8E12-0AAT Micron

512Mb, Twin-Quad I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Twin-Quad I/O, 4KB, 32KB, 64KB, Sector Erase MT25TL512 Options Marking Features Voltage Stacked device (two 256Mb die) 2.73.6V L SPI-compatible serial bus interface Density Single and double transfer rate (STR/DTR) 512Mb 512 Clock frequency Device stacking 133 MHz (MAX) for all protocols in STR B = 2 die and 1 S pin B 90 MHz (MAX) for all protocols in DTR H = 2 die and 2 S pins H Dual/quad I/O instruction provides increased Device generation B throughput up to 90 MB/s for each die correspond- Die revision A ing to 180 MB/s for the twin-quad device Pin configuration Supported protocols in both STR and DTR RESET and HOLD 8 Extended I/O protocol Sector size Dual I/O protocol 64KB E Quad I/O protocol Packages JEDEC-standard, RoHS- Execute-in-place (XIP) compliant PROGRAM/ERASE SUSPEND operations 16-pin SOP2, 300 mils body width SF Volatile and nonvolatile configuration settings (SO16W) Software reset 24-ball T-PBGA, 05/6mm x 8mm 12 Additional reset pin for selected part numbers (TBGA24) 3-byte and 4-byte addressability mode supported Security features Dedicated 64-byte OTP area outside main memory Standard 0 Readable and user-lockable Special options Permanent lock with PROGRAM OTP command Automotive A Erase capability Operating temperature range Die erase From 40C to +105C AT Sector erase 64KB uniform granularity Subsector erase 4KB, 32KB granularity Security and write protection Volatile and nonvolatile locking and software write protection for each 64KB sector Nonvolatile configuration locking Password protection Hardware write protection: nonvolatile bits (BP 3:0 and TB) define protected area size Program/erase protection during power-up CRC detects accidental changes to raw data Electronic signature JEDEC-standard 3-byte signature (BA19h) Extended device ID: two additional bytes identify device factory options JESD47H-compliant Minimum 100,000 ERASE cycles per sector Data retention: 20 years (TYP) 09005aef86110ec2/CCMTD-1725822587-3651 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 mt25t-qljs-L512-xBA-xxT.pdf - Rev. I 06/19 EN 2014 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.512Mb, Twin-Quad I/O Serial Flash Memory Features Part Number Ordering Micron serial NOR Flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Part Number Ordering Information MT 25T L xxx B BA 1 E SF - 0 A AT ES Micron Technology Production Status Blank = Production Part Family ES = Engineering samples 25T = Twin Quad Serial NOR Flash QS = Qualification samples Voltage Operating Temperature L = 2.73.6V AT = 40C to +105C Density Special Options 256 = 256Mb (32MB) A = Automotive grade AEC-Q100 512 = 512Mb (64MB) 01G = 1Gb (128GB) Security Features 0 = Standard default security Stack B = 2 die/1 S Package Codes H = 2 die/2 S 12 = 24-ball T-PBGA, 05/6 x 8mm (5 x 5 array) SF = 16-pin SOP2, 300 mil Device Generation A = 1st generation Sector Size B = 2nd generation E = 64KB sectors, 4KB and 32KB sub-sectors Die Revision Pin Configuration Option A = Rev. A 1 = HOLD pin B = Rev. B 3 = RESET pin 8 = RESET and HOLD pins 09005aef86110ec2/CCMTD-1725822587-3651 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 mt25t-qljs-L512-xBA-xxT.pdf - Rev. I 06/19 EN 2014 Micron Technology, Inc. All rights reserved.