X-On Electronics has gained recognition as a prominent supplier of MT28GU01GAAA1EGC-0SIT NOR Flash across the USA, India, Europe, Australia, and various other global locations. MT28GU01GAAA1EGC-0SIT NOR Flash are a product manufactured by Micron. We provide cost-effective solutions for NOR Flash, ensuring timely deliveries around the world.

MT28GU01GAAA1EGC-0SIT Micron

MT28GU01GAAA1EGC-0SIT electronic component of Micron
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Part No.MT28GU01GAAA1EGC-0SIT
Manufacturer: Micron
Category: NOR Flash
Description: NOR Flash Parallel 1Gbit 16 64/64 TBGA
Datasheet: MT28GU01GAAA1EGC-0SIT Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 21.0533 ea
Line Total: USD 21.05 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec

Multiples : 1800

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 21.0533
10 : USD 18.61
25 : USD 17.6866
100 : USD 17.5102

   
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We are delighted to provide the MT28GU01GAAA1EGC-0SIT from our NOR Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT28GU01GAAA1EGC-0SIT and other electronic components in the NOR Flash category and beyond.

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128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory Features Micron StrataFlash Embedded Memory P/N PC28F128G18xx P/N PC28F256G18xx P/N PC28F512G18xx P/N PC28F00AG18xx Power Features Core voltage: 1.7 V - 2.0 V High-Performance Read, Program and Erase I/O voltage: 1.7 V - 2.0 V 96 ns initial read access Standby current: 60 A (typ) for 512-Mbit, 65 nm 108 MHz with zero wait-state synchronous burst Deep Power-Down mode: 2 A (typ) reads: 7 ns clock-to-data output Automatic Power Savings mode 133 MHz with zero wait-state synchronous burst 16-word synchronous-burst read current: 23 mA reads: 5.5 ns clock-to-data output (typ) 108 MHz 24 mA (typ) 133 MHz 8-, 16-, and continuous-word synchronous-burst Software Reads Micron Flash data integrator (FDI) optimized Programmable WAIT configuration Basic command set (BCS) and extended com- Customer-configurable output driver impedance mand set (ECS) compatible Buffered Programming: 2.0 s/Word (typ), 512- Common Flash interface (CFI) capable Mbit 65 nm Security Block Erase: 0.9 s per block (typ) One-time programmable (OTP) space 20 s (typ) program/erase suspend 64 unique factory device identifier bits Architecture 2112 user-programmable OTP bits 16-bit wide data bus Absolute write protection: V = GND PP Multi-Level Cell Technology Power-transition erase/program lockout Symmetrically-Blocked Array Architecture Individual zero latency block locking 256-Kbyte Erase Blocks Individual block lock-down 1-Gbit device: Eight 128-Mbit partitions Density and packaging 512-Mbit device: Eight 64-Mbit partitions 128Mb, 256Mb, 512Mbit, and 1-Gbit 256-Mbit device: Eight 32-Mbit partitions Address-data multiplexed and non-multiplexed 128-Mbit device: Eight 16-Mbit partitions interfaces Read-While-Program and Read-While-Erase 64-Ball Easy BGA Status Register for partition/device status Blank Check feature Quality and Reliability Expanded temperature: 30 C to +85 C Minimum 100,000 erase cycles per block 65nm Process Technology PDF: 09005aef8448483a Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 128 256 512 65nm g18.pdf - Rev. F 8/11 EN 2011 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory Features Contents General Description ......................................................................................................................................... 8 Functional Overview ........................................................................................................................................ 8 Configuration and Memory Map ....................................................................................................................... 9 Device ID ....................................................................................................................................................... 12 Package Dimensions ....................................................................................................................................... 13 Signal Assignments ......................................................................................................................................... 14 Signal Descriptions ......................................................................................................................................... 15 Bus Interface .................................................................................................................................................. 17 Reset .......................................................................................................................................................... 17 Standby ..................................................................................................................................................... 17 Output Disable ........................................................................................................................................... 17 Asynchronous Read .................................................................................................................................... 18 Synchronous Read ...................................................................................................................................... 18 Burst Wrapping .......................................................................................................................................... 18 End-of-Wordline Delay ............................................................................................................................... 19 Write .......................................................................................................................................................... 20 Command Definitions .................................................................................................................................... 21 Status Register ................................................................................................................................................ 24 Clear Status Register ................................................................................................................................... 25 Read Configuration Register ........................................................................................................................... 26 Programming the Read Configuration Register ............................................................................................ 27 Extended Configuration Register ..................................................................................................................... 28 Output Driver Control ................................................................................................................................ 28 Programming the Extended Configuration Register ...................................................................................... 29 Read Operations ............................................................................................................................................. 30 Read Array ................................................................................................................................................. 30 Read ID ...................................................................................................................................................... 30 Read CFI .................................................................................................................................................... 31 Read Status Register ................................................................................................................................... 31 WAIT Operation ......................................................................................................................................... 32 Programming Modes ...................................................................................................................................... 33 Control Mode ............................................................................................................................................. 33 Object Mode .............................................................................................................................................. 34 Program Operations ....................................................................................................................................... 38 Single-Word Programming .......................................................................................................................... 38 Buffered Programming ............................................................................................................................... 39 Buffered Enhanced Factory Programming ................................................................................................... 39 Erase Operations ............................................................................................................................................ 42 BLOCK ERASE ............................................................................................................................................ 42 SUSPEND and RESUME Operations ................................................................................................................ 43 SUSPEND Operation .................................................................................................................................. 43 RESUME Operation .................................................................................................................................... 44 BLANK CHECK Operation .............................................................................................................................. 45 Block Lock ..................................................................................................................................................... 46 One-Time Programmable Operations .............................................................................................................. 48 Programming OTP Area .............................................................................................................................. 50 Reading OTP Area ....................................................................................................................................... 50 Global Main-Array Protection ......................................................................................................................... 51 Dual Operation .............................................................................................................................................. 52 Power and Reset Specifications ....................................................................................................................... 53 PDF: 09005aef8448483a Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 128 256 512 65nm g18.pdf - Rev. F 8/11 EN 2011 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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