Micron Confidential and Proprietary 16Gb, 32Gb, 64Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB Data strobe (DQS) signals provide a hardware meth- Features od for synchronizing data DQ in the synchronous 1 Open NAND Flash Interface (ONFI) 2.2-compliant interface Single-level cell (SLC) technology Copyback operations supported within the plane Organization from which data is read Page size x8: 4320 bytes (4096 + 224 bytes) Quality and reliability Block size: 128 pages (512K + 28K bytes) Data retention: JESD47 compliant see qualifica- Plane size: 2 planes x 2048 blocks per plane tion report Device size: 16Gb: 4096 blocks Endurance: 60,000 PROGRAM/ERASE cycles 32Gb: 8192 blocks 64Gb: 16,384 blocks Operating temperature: Synchronous I/O performance Commercial: 0C to +70C Up to synchronous timing mode 5 Industrial (IT): 40C to +85C Clock rate: 10ns (DDR) Package Read/write throughput per pin: 200 MT/s 48-pin TSOP Asynchronous I/O performance 100-ball BGA Up to asynchronous timing mode 5 1. The ONFI 2.2 specification is available at t t Note: RC/ WC: 20ns (MIN) www.onfi.org. Array performance Read page: 35s (MAX) Program page: 350s (TYP) Erase block: 1.5ms (TYP) Operating Voltage Range V : 2.73.6V CC V : 1.7-1.95V, 2.73.6V CCQ Command set: ONFI NAND Flash Protocol Advanced Command Set Program cache Read cache sequential Read cache random One-time programmable (OTP) mode Multi-plane commands Multi-LUN operations Read unique ID Copyback First block (block address 00h) is valid when ship- ped from factory. For minimum required ECC, see Error Management (page 100). RESET (FFh) required as first command after pow- er-on Operation status byte provides software method for detecting Operation completion Pass/fail condition Write-protect status PDF: 09005aef844588dc Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 M72A 16Gb 32Gb 64Gb AsyncSync NAND.pdf Rev. G 5/12 EN 2010 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.Micron Confidential and Proprietary 16Gb, 32Gb, 64Gb Asynchronous/Synchronous NAND Features Part Numbering Information Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Part Numbering MT 29F 16G 08 A B A C A WP Z ES :C Micron Technology Design Revision C = Third revision NAND Flash Production Status 29F = NAND Flash memory Blank = Production ES = Engineering sample Density 16G = 16Gb Reserved for Future Use 32G = 32Gb Blank 64G = 64Gb Wafer Process Applied Device Width Blank = Polyimide Process Not Applied 08 = 8 bits Z = Polyimide Process Applied Level Operating Temperature Range Bit/Cell Blank = Commercial (0C to +70C) A 1-bit IT = Industrial (40C to +85C) Classification Speed Grade (synchronous mode only) Die of CE of R/B I/O -10 = 200 MT/s B 1 1 1 Common E 2 2 2 Separate Package Code 1 F 2 2 2 Common H1 = 100-ball VBGA 12mm x 18mm x 1.0mm 1 H2 = 100-ball TBGA 12mm x 18mm x 1.2mm K 4 2 2 Separate 1 WP = 48-pin TSOP (CPL) Operating Voltage Range A = V : 3.3V (2.73.6V), V : 3.3V (2.73.6V) Interface CC CCQ C = V : 3.3V (2.73.6V), V : 1.8V (1.72.95V) A = Async only CC CCQ B = Sync/Async Generation Feature Set C = Third set of device features 1. Pb-free package. Note: PDF: 09005aef844588dc Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 M72A 16Gb 32Gb 64Gb AsyncSync NAND.pdf Rev. G 5/12 EN 2010 Micron Technology, Inc. All rights reserved.