Micron Confidential and Proprietary
16Gb, 32Gb, 64Gb Asynchronous/Synchronous NAND
Features
NAND Flash Memory
MT29F16G08ABACA, MT29F32G08AFACA
MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB
Data strobe (DQS) signals provide a hardware meth-
Features
od for synchronizing data DQ in the synchronous
1
Open NAND Flash Interface (ONFI) 2.2-compliant
interface
Single-level cell (SLC) technology
Copyback operations supported within the plane
Organization
from which data is read
Page size x8: 4320 bytes (4096 + 224 bytes)
Quality and reliability
Block size: 128 pages (512K + 28K bytes)
Data retention: JESD47 compliant; see qualifica-
Plane size: 2 planes x 2048 blocks per plane
tion report
Device size: 16Gb: 4096 blocks;
Endurance: 60,000 PROGRAM/ERASE cycles
32Gb: 8192 blocks; 64Gb: 16,384 blocks
Operating temperature:
Synchronous I/O performance
Commercial: 0C to +70C
Up to synchronous timing mode 5
Industrial (IT): 40C to +85C
Clock rate: 10ns (DDR)
Package
Read/write throughput per pin: 200 MT/s
48-pin TSOP
Asynchronous I/O performance
100-ball BGA
Up to asynchronous timing mode 5
1. The ONFI 2.2 specification is available at
t t Note:
RC/ WC: 20ns (MIN)
www.onfi.org.
Array performance
Read page: 35s (MAX)
Program page: 350s (TYP)
Erase block: 1.5ms (TYP)
Operating Voltage Range
V : 2.73.6V
CC
V : 1.7-1.95V, 2.73.6V
CCQ
Command set: ONFI NAND Flash Protocol
Advanced Command Set
Program cache
Read cache sequential
Read cache random
One-time programmable (OTP) mode
Multi-plane commands
Multi-LUN operations
Read unique ID
Copyback
First block (block address 00h) is valid when ship-
ped from factory. For minimum required ECC, see
Error Management (page 100).
RESET (FFh) required as first command after pow-
er-on
Operation status byte provides software method for
detecting
Operation completion
Pass/fail condition
Write-protect status
PDF: 09005aef844588dc Micron Technology, Inc. reserves the right to change products or specifications without notice.
1
M72A_16Gb_32Gb_64Gb_AsyncSync_NAND.pdf Rev. G 5/12 EN 2010 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.Micron Confidential and Proprietary
16Gb, 32Gb, 64Gb Asynchronous/Synchronous NAND
Features
Part Numbering Information
Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by
using Microns part catalog search at www.micron.com. To compare features and specifications by device type,
visit www.micron.com/products. Contact the factory for devices not found.
Figure 1: Part Numbering
MT 29F 16G 08 A B A C A WP Z ES :C
Micron Technology Design Revision
C = Third revision
NAND Flash
Production Status
29F = NAND Flash memory
Blank = Production
ES = Engineering sample
Density
16G = 16Gb
Reserved for Future Use
32G = 32Gb
Blank
64G = 64Gb
Wafer Process Applied
Device Width
Blank = Polyimide Process Not Applied
08 = 8 bits
Z = Polyimide Process Applied
Level
Operating Temperature Range
Bit/Cell
Blank = Commercial (0C to +70C)
A 1-bit
IT = Industrial (40C to +85C)
Classification
Speed Grade (synchronous mode only)
Die # of CE# # of R/B# I/O
-10 = 200 MT/s
B 1 1 1 Common
E 2 2 2 Separate Package Code
1
F 2 2 2 Common H1 = 100-ball VBGA 12mm x 18mm x 1.0mm
1
H2 = 100-ball TBGA 12mm x 18mm x 1.2mm
K 4 2 2 Separate
1
WP = 48-pin TSOP (CPL)
Operating Voltage Range
A = V : 3.3V (2.73.6V), V : 3.3V (2.73.6V)
Interface
CC CCQ
C = V : 3.3V (2.73.6V), V : 1.8V (1.72.95V)
A = Async only
CC CCQ
B = Sync/Async
Generation Feature Set
C = Third set of device features
1. Pb-free package.
Note:
PDF: 09005aef844588dc Micron Technology, Inc. reserves the right to change products or specifications without notice.
2
M72A_16Gb_32Gb_64Gb_AsyncSync_NAND.pdf Rev. G 5/12 EN 2010 Micron Technology, Inc. All rights reserved.