Micron Confidential and Proprietary 1Gb x8, x16: NAND Flash Memory Features NAND Flash Memory MT29F1G08ABADAWP, MT29F1G08ABBDAH4, MT29F1G08ABBDAHC, MT29F1G16ABBDAH4, MT29F1G16ABBDAHC, MT29F1G08ABADAH4 Ready/busy (R/B ) signal provides a hardware Features method for detecting operation completion 1 Open NAND Flash Interface (ONFI) 1.0-compliant WP signal: write protect entire device Single-level cell (SLC) technology First block (block address 00h) is valid when ship- Organization ped from factory with ECC. For minimum required Page size x8: 2112 bytes (2048 + 64 bytes) ECC, see Error Management. Page size x16: 1056 words (1024 + 32 words) Block 0 requires 1-bit ECC if PROGRAM/ERASE cy- Block size: 64 pages (128K + 4K bytes) cles are less than 1000 Device size: 1Gb: 1024 blocks RESET (FFh) required as first command after pow- Asynchronous I/O performance er-on t t RC/ WC: 20ns (3.3V), 25ns (1.8V) Alternate method of device initialization (Nand In- 4 Array performance it) after power up (contact factory) 3 Read page: 25s Quality and reliability 3 Program page: 200s (TYP, 3.3V and 1.8V) Data retention: 10 years Erase block: 700s (TYP) Endurance: 100,000 PROGRAM/ERASE cycles Command set: ONFI NAND Flash Protocol Operating Voltage Range Advanced command set V : 2.73.6V CC 5 Program page cache mode V : 1.71.95V CC 5 Read page cache mode Operating temperature: One-time programmable (OTP) mode Commercial: 0C to +70C Read unique ID Extended (ET): 40C to +85C Internal data move Package 2 Operation status byte provides software method for 48-pin TSOP type 1, CPL detecting 63-ball VFBGA Operation completion 1. The ONFI 1.0 specification is available at Notes: Pass/fail condition www.onfi.org. Write-protect status 2. CPL = Center parting line. Internal data move operations supported within the t 3. See Electrical Specifications for R ECC and device from which data is read t PROG ECC specifications. 4. Available only in the 1.8V VFBGA package. 5. Supported only with ECC disabled. PDF: 09005aef83e5ffed Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 m68a 1gb nand.pdf - Rev. L 10/12 EN 2010 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.Micron Confidential and Proprietary 1Gb x8, x16: NAND Flash Memory Features Part Numbering Information Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Marketing Part Number Chart MT 29F 1G 08 A B B D A HC IT ES :D Micron Technology Design Revision (shrink) Product Family Production Status 29F = NAND Flash memory Blank = Production ES = Engineering sample Density MS = Mechanical sample 1G = 1Gb QS = Qualification sample Device Width Special Options 08 = 8-bit Blank 16 = 16-bit X = Product longevity program (PLP) Operating Temperature Range Level Blank = Commercial (0C to +70C) A= SLC IT = Industrial (40C to +85C) Classification Mark Die nCE RnB I/O Channels Speed Grade B 1 1 1 1 Blank Package Code Operating Voltage Range WP = 48-pin TSOP 1 A = 3.3V (2.73.6V) HC = 63-ball VFBGA (10.5 x 13 x 1.0mm) B = 1.8V (1.71.95V) H4 = 63-ball VFBGA (9 x 11 x 1.0mm) Feature Set D = Feature set D Interface A = Async only PDF: 09005aef83e5ffed Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 m68a 1gb nand.pdf - Rev. L 10/12 EN 2010 Micron Technology, Inc. All rights reserved.