X-On Electronics has gained recognition as a prominent supplier of MT29F2G08ABAEAH4:E NAND Flash across the USA, India, Europe, Australia, and various other global locations. MT29F2G08ABAEAH4:E NAND Flash are a product manufactured by Micron. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

MT29F2G08ABAEAH4:E Micron

MT29F2G08ABAEAH4:E electronic component of Micron
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See Product Specifications
Part No.MT29F2G08ABAEAH4:E
Manufacturer: Micron
Category: NAND Flash
Description: SLC NAND Flash Parallel 3.3V 2Gbit 256M x 8bit 63-Pin VFBGA Tray
Datasheet: MT29F2G08ABAEAH4:E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.5228 ea
Line Total: USD 3.52 
Availability - 10485
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 4.9502
10 : USD 4.7362

10485
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 3.5228
10 : USD 3.1185
100 : USD 2.9106
250 : USD 2.899
500 : USD 2.7951
1000 : USD 2.6912
2520 : USD 2.5872
5040 : USD 2.5179
10080 : USD 2.4601

   
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We are delighted to provide the MT29F2G08ABAEAH4:E from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT29F2G08ABAEAH4:E and other electronic components in the NAND Flash category and beyond.

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Micron Confidential and Proprietary 2Gb: x8, x16 NAND Flash Memory Features NAND Flash Memory MT29F2G08ABAEAH4, MT29F2G08ABAEAWP, MT29F2G08ABBEAH4 MT29F2G08ABBEAHC, MT29F2G16ABAEAWP, MT29F2G16ABBEAH4 MT29F2G16ABBEAHC First block (block address 00h) is valid when ship- Features ped from factory with ECC. For minimum required 1 Open NAND Flash Interface (ONFI) 1.0-compliant ECC, see Error Management. Single-level cell (SLC) technology Block 0 requires 1-bit ECC if PROGRAM/ERASE cy- Organization cles are less than 1000 Page size x8: 2112 bytes (2048 + 64 bytes) RESET (FFh) required as first command after pow- Page size x16: 1056 words (1024 + 32 words) er-on Block size: 64 pages (128K + 4K bytes) Alternate method of device initialization (Nand In- Plane size: 2 planes x 1024 blocks per plane it) after power up (contact factory) Device size: 2Gb: 2048 blocks Internal data move operations supported within the Asynchronous I/O performance plane from which data is read t t RC/ WC: 20ns (3.3V), 25ns (1.8V) Quality and reliability Array performance Data retention: 10 years 3 Read page: 25s Endurance: 100,000 PROGRAM/ERASE cycles 3 Program page: 200s (TYP: 1.8V, 3.3V) Operating voltage range Erase block: 700s (TYP) V : 2.73.6V CC Command set: ONFI NAND Flash Protocol V : 1.71.95V CC Advanced command set Operating temperature 4 Program page cache mode Commercial: 0C to +70C 4 Read page cache mode Industrial (IT): 40C to +85C One-time programmable (OTP) mode Automotive Industrial (AIT): 40C to +85C 4 Two-plane commands Automotive (AAT): 40C to +105C Interleaved die (LUN) operations Package 2 Read unique ID 48-pin TSOP type 1, CPL Block lock (1.8V only) 63-ball VFBGA Internal data move 1. The ONFI 1.0 specification is available at Notes: Operation status byte provides software method for www.onfi.org. detecting 2. CPL = Center parting line. Operation completion 3. See Electrical Specifications Program/Erase Pass/fail condition t t Characteristics for R ECC and PROG ECC Write-protect status specifications. Ready/Busy (R/B ) signal provides a hardware 4. These commands supported only with ECC method of detecting operation completion disabled. WP signal: Write protect entire device PDF: 09005aef83b83f42 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 m69a 2gb ecc nand.pdf - Rev. R 04/14 EN 2009 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.Micron Confidential and Proprietary 2Gb: x8, x16 NAND Flash Memory Features Part Numbering Information Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Marketing Part Number Chart MT 29F 2G 08 A B A E A WP IT ES :E Design Revision (shrink) Micron Technology Production Status Product Family Blank = Production 29F = NAND Flash memory ES = Engineering sample MS = Mechanical sample Density QS = Qualification sample 2G = 2Gb Device Width Special Options 08 = 8-bit Blank 16 = 16-bit X = Product longevity program (PLP) Level Operating Temperature Range Blank = Commercial (0C to +70C) A = SLC IT = Industrial (40C to +85C) AIT = Automotive Industrial (40C to +85C) Classification AAT = Automotive (40C to +115C) Mark Die nCE RnB I/O Channels B 1 1 1 1 Speed Grade Blank Operating Voltage Range A = 3.3V (2.73.6V) Package Code B = 1.8V (1.71.95V) WP = 48-pin TSOP HC = 63-ball VFBGA (10.5 x 13 x 1.0mm) Feature Set H4 = 63-ball VFBGA (9 x 11 x 1.0mm) E = Feature set E Interface A = Async only PDF: 09005aef83b83f42 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 m69a 2gb ecc nand.pdf - Rev. R 04/14 EN 2009 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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