MT29F2G08ABAEAWP-AATX:E TR Micron

Micron Confidential and Proprietary 2Gb: x8, x16 Automotive NAND Flash Memory Features Automotive NAND Flash Memory MT29F2G08ABAEAH4-AITX:E, MT29F2G08ABAEAH4-AATX:E, MT29F2G08ABAEAWP-AITX:E, MT29F2G08ABAEAWP-AATX:E, MT29F2G08ABBEAH4-AITX:E, MT29F2G08ABBEAHC-AIT:E, MT29F2G16ABAEAWP-AIT:E, MT29F2G16ABBEAHC-AIT:E, MT29F2G16ABBEAH4-AAT:E, MT29F2G16ABAEAWP-AAT:E First block (block address 00h) is valid when ship- Features ped from factory with ECC. For minimum required 1 Open NAND Flash Interface (ONFI) 1.0-compliant ECC, see Error Management. Single-level cell (SLC) technology Block 0 requires 1-bit ECC if PROGRAM/ERASE cy- Organization cles are less than 1000 Page size x8: 2112 bytes (2048 + 64 bytes) RESET (FFh) required as first command after pow- Page size x16: 1056 words (1024 + 32 words) er-on Block size: 64 pages (128K + 4K bytes) Alternate method of device initialization (Nand In- Plane size: 2 planes x 1024 blocks per plane it) after power up (contact factory) Device size: 2Gb: 2048 blocks Internal data move operations supported within the Asynchronous I/O performance plane from which data is read t t RC/ WC: 20ns (3.3V), 25ns (1.8V) Quality and reliability Array performance Data retention: 10 years 3 Read page: 25s Endurance: 100,000 PROGRAM/ERASE cycles 3 Program page: 200s (TYP: 1.8V, 3.3V) Operating voltage range Erase block: 700s (TYP) V : 2.73.6V CC Command set: ONFI NAND Flash Protocol V : 1.71.95V CC Advanced command set Operating temperature 4 Program page cache mode Automotive Industrial (AIT): 40C to +85C 4 Read page cache mode Automotive (AAT): 40C to +105C One-time programmable (OTP) mode Package 4 2 Two-plane commands 48-pin TSOP type 1, CPL Interleaved die (LUN) operations 63-ball VFBGA Read unique ID Block lock (1.8V only) 1. The ONFI 1.0 specification is available at Notes: Internal data move www.onfi.org. Operation status byte provides software method for 2. CPL = Center parting line. detecting 3. See Electrical Specifications Program/Erase t t Operation completion Characteristics for R ECC and PROG ECC specifications. Pass/fail condition Write-protect status 4. These commands supported only with ECC disabled. Ready/Busy (R/B ) signal provides a hardware method of detecting operation completion WP signal: Write protect entire device 09005aef8596adc8 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 m69a automotive 2Gb ecc nand.pdf - Rev. F 11/16 EN 2014 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.Micron Confidential and Proprietary 2Gb: x8, x16 Automotive NAND Flash Memory Features Part Numbering Information Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Marketing Part Number Chart MT 29F 2G 08 A B A E A WP IT ES :E Design Revision (shrink) Micron Technology Production Status Product Family Blank = Production 29F = NAND Flash memory ES = Engineering sample MS = Mechanical sample QS = Qualification sample Density 2G = 2Gb Special Options Blank Device Width X = Product longevity program (PLP) 08 = 8-bit 16 = 16-bit Operating Temperature Range AIT = Automotive Industrial (40C to +85C) Level AAT = Automotive Certified (40C to +105C) A = SLC Speed Grade Classification Blank Mark Die nCE RnB I/O Channels B 1 1 1 1 Package Code WP = 48-pin TSOP Operating Voltage Range HC = 63-ball VFBGA (10.5 x 13 x 1.0mm) A = 3.3V (2.73.6V) H4 = 63-ball VFBGA (9 x 11 x 1.0mm) B = 1.8V (1.71.95V) Interface Feature Set A = Async only E = Feature set E 09005aef8596adc8 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 m69a automotive 2Gb ecc nand.pdf - Rev. F 11/16 EN 2014 Micron Technology, Inc. All rights reserved.