MT29F2G08ABAEAWP:E TR Micron

Micron Confidential and Proprietary 2Gb: x8, x16 NAND Flash Memory Features NAND Flash Memory MT29F2G08ABAEAH4, MT29F2G08ABAEAWP, MT29F2G08ABBEAH4 MT29F2G08ABBEAHC, MT29F2G16ABAEAWP, MT29F2G16ABBEAH4 MT29F2G16ABBEAHC First block (block address 00h) is valid when ship- Features ped from factory with ECC. For minimum required 1 Open NAND Flash Interface (ONFI) 1.0-compliant ECC, see Error Management. Single-level cell (SLC) technology Block 0 requires 1-bit ECC if PROGRAM/ERASE cy- Organization cles are less than 1000 Page size x8: 2112 bytes (2048 + 64 bytes) RESET (FFh) required as first command after pow- Page size x16: 1056 words (1024 + 32 words) er-on Block size: 64 pages (128K + 4K bytes) Alternate method of device initialization (Nand In- Plane size: 2 planes x 1024 blocks per plane it) after power up (contact factory) Device size: 2Gb: 2048 blocks Internal data move operations supported within the Asynchronous I/O performance plane from which data is read t t RC/ WC: 20ns (3.3V), 25ns (1.8V) Quality and reliability Array performance Data retention: 10 years 3 Read page: 25s Endurance: 100,000 PROGRAM/ERASE cycles 3 Program page: 200s (TYP: 1.8V, 3.3V) Operating voltage range Erase block: 700s (TYP) V : 2.73.6V CC Command set: ONFI NAND Flash Protocol V : 1.71.95V CC Advanced command set Operating temperature 4 Program page cache mode Commercial: 0C to +70C 4 Read page cache mode Industrial (IT): 40C to +85C One-time programmable (OTP) mode Automotive Industrial (AIT): 40C to +85C 4 Two-plane commands Automotive (AAT): 40C to +105C Interleaved die (LUN) operations Package 2 Read unique ID 48-pin TSOP type 1, CPL Block lock (1.8V only) 63-ball VFBGA Internal data move 1. The ONFI 1.0 specification is available at Notes: Operation status byte provides software method for www.onfi.org. detecting 2. CPL = Center parting line. Operation completion 3. See Electrical Specifications Program/Erase Pass/fail condition t t Characteristics for R ECC and PROG ECC Write-protect status specifications. Ready/Busy (R/B ) signal provides a hardware 4. These commands supported only with ECC method of detecting operation completion disabled. WP signal: Write protect entire device PDF: 09005aef83b83f42 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 m69a 2gb ecc nand.pdf - Rev. R 04/14 EN 2009 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.Micron Confidential and Proprietary 2Gb: x8, x16 NAND Flash Memory Features Part Numbering Information Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Marketing Part Number Chart MT 29F 2G 08 A B A E A WP IT ES :E Design Revision (shrink) Micron Technology Production Status Product Family Blank = Production 29F = NAND Flash memory ES = Engineering sample MS = Mechanical sample Density QS = Qualification sample 2G = 2Gb Device Width Special Options 08 = 8-bit Blank 16 = 16-bit X = Product longevity program (PLP) Level Operating Temperature Range Blank = Commercial (0C to +70C) A = SLC IT = Industrial (40C to +85C) AIT = Automotive Industrial (40C to +85C) Classification AAT = Automotive (40C to +115C) Mark Die nCE RnB I/O Channels B 1 1 1 1 Speed Grade Blank Operating Voltage Range A = 3.3V (2.73.6V) Package Code B = 1.8V (1.71.95V) WP = 48-pin TSOP HC = 63-ball VFBGA (10.5 x 13 x 1.0mm) Feature Set H4 = 63-ball VFBGA (9 x 11 x 1.0mm) E = Feature set E Interface A = Async only PDF: 09005aef83b83f42 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 m69a 2gb ecc nand.pdf - Rev. R 04/14 EN 2009 Micron Technology, Inc. All rights reserved.