2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory Features NAND Flash Memory MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP Figure 1: 48-Pin TSOP Type 1 Features Organization: Page size: x8: 2,112 bytes (2,048 + 64 bytes) x16: 1,056 words (1,024 + 32 words) Block size: 64 pages (128K + 4K bytes) Device size: 2Gb: 2,048 blocks 4Gb: 4,096 blocks 8Gb: 8,192 blocks Read performance: Random read: 25s Sequential read: 30ns (3V x8 only) Write performance: Page program: 300s (TYP) Block erase: 2ms (TYP) Endurance: 100,000 PROGRAM/ERASE cycles Data retention: 10 years First block (block address 00h) guaranteed to be valid without ECC (up to 1,000 PROGRAM/ERASE cycles) Options Marking VCC: 2.7V3.6V Density: Automated PROGRAM and ERASE 2Gb (single die) MT29F2GxxAAB Basic NAND command set: 4Gb (dual-die stack) MT29F4GxxBAB PAGE READ, RANDOM DATA READ, READ ID, 8Gb (quad-die stack) MT29F8GxxFAB READ STATUS, PROGRAM PAGE, RANDOM DATA Device width: INPUT, PROGRAM PAGE CACHE MODE, INTER- x8 MT29Fxx08x NAL DATA MOVE, INTERNAL DATA MOVE with x16 MT29Fxx16x Configuration: of of of RANDOM DATA INPUT, BLOCK ERASE, RESET die CE R/B New commands: 11 1 A PAGE READ CACHE MODE 21 1 B READ UNIQUE ID (contact factory) 42 2 F READ ID2 (contact factory) VCC: 2.7V3.6V A Operation status byte provides a software method of Second generation die B detecting: Package: PROGRAM/ERASE operation completion 48 TSOP type I (lead-free) WP PROGRAM/ERASE pass/fail condition 48 TSOP type I (NEW version, WA Write-protect status 8Gb device only, lead-free) Ready/busy (R/B ) pin provides a hardware 48 TSOP type I (contact factory) WG method of detecting PROGRAM or ERASE cycle Operating temperature: completion Commercial (0C to 70C) None PRE pin: prefetch on power up Extended temperature (-40C to +85C) ET WP pin: hardware write protect PDF: 09005aef818a56a7 / Source: 09005aef81590bdd Micron Technology, Inc., reserves the right to change products or specifications without notice. 2gb nand m29b 1.fm - Rev. I 1/06 EN 1 2004 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory Part Numbering Information Part Numbering Information Micron NAND Flash devices are available in several different configurations and densities. (See Figure 2.) Figure 2: Part Number Chart MT 29F 2G 08 A A B WP ES Micron Technology Production Status Blank = Production Product Family ES = Engineering Sample 29F = Single-Supply NAND Flash Memory MS = Mechanical Sample Density Operating Temperature Range 2G = 2Gb Blank = Commercial (0C to +70C) 4G = 4Gb ET = Extended (40 to +85C) 8G = 8Gb Reserved for Future Use Device Width 08 = 8 bits Reserved for Future Use 16 = 16 bits Package Codes Classification WP = 48-pin TSOP I (lead-free) of die of CE of R/B I/O WA = 48-pin TSOP I (new version, A 1 1 1 Common 8Gb device only, lead-free) B 2 1 1 Common WG = 48-pin TSOP I (contact factory) F 4 2 2 Common Generation Operating Voltage Range A = 1st Generation Die A = 3.3V (2.70V3.60V) B = 2nd Generation Die C = 3rd Generation Die Valid Part Number Combinations After building the part number from the part numbering chart above, verify that the part number is valid using the Micron Parametric Part Search Web site at