MT29F32G08ABAAAWP-ITZ:A TR Micron

Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F32G08ABAAA, MT29F64G08AFAAA, MT29F128G08A J/K/M AAA MT29F256G08AUAAA, MT29F32G08ABCAB, MT29F64G08AECAB MT29F128G08A K/M CAB, MT29F256G08AUCAB Operation status byte provides software method for Features detecting 1 Open NAND Flash Interface (ONFI) 2.2-compliant Operation completion Single-level cell (SLC) technology Pass/fail condition Organization Write-protect status Page size x8: 8640 bytes (8192 + 448 bytes) Data strobe (DQS) signals provide a hardware meth- Block size: 128 pages (1024K + 56K bytes) od for synchronizing data DQ in the synchronous Plane size: 2 planes x 2048 blocks per plane interface Device size: 32Gb: 4096 blocks Copyback operations supported within the plane 64Gb: 8192 blocks from which data is read 128Gb: 16,384 blocks Quality and reliability 256Gb: 32,786 blocks Data retention: JESD47G compliant see qualifi- Synchronous I/O performance cation report Up to synchronous timing mode 5 Endurance: 60,000 PROGRAM/ERASE cycles Clock rate: 10ns (DDR) Operating temperature: Read/write throughput per pin: 200 MT/s Commercial: 0C to +70C Asynchronous I/O performance Industrial (IT): 40C to +85C Up to asynchronous timing mode 5 Package t t RC/ WC: 20ns (MIN) 52-pad LGA Read/write throughput per pin: 50 MT/s 48-pin TSOP Array performance 100-ball BGA Read page: 35s (MAX) 132-ball BGA Program page: 350s (TYP) 1. The ONFI 2.2 specification is available at Note: Erase block: 1.5ms (TYP) www.onfi.org. Operating Voltage Range V : 2.73.6V CC V : 1.71.95V, 2.73.6V CCQ Command set: ONFI NAND Flash Protocol Advanced Command Set Program cache Read cache sequential Read cache random One-time programmable (OTP) mode Multi-plane commands Multi-LUN operations Read unique ID Copyback First block (block address 00h) is valid when ship- ped from factory. For minimum required ECC, see Error Management (page 114). RESET (FFh) required as first command after pow- er-on PDF: 09005aef83e0bed4 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 M73A 32Gb 64Gb 128Gb 256Gb AsyncSync NAND.pdf Rev. G 1/14 EN 2010 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features Part Numbering Information Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Part Numbering MT 29F 32G 08 A B A A A WP Z ES :A Micron Technology Design Revision A = First revision NAND Flash Production Status 29F = NAND Flash memory Blank = Production ES = Engineering sample Density Reserved for Future Use 32G = 32Gb Blank 64G = 64Gb 128G = 128Gb Wafer Process Applied 256G = 256Gb Blank = Polyimide Process Not Applied Z = Polyimide Process Applied Device Width 08 = 8 bits Operating Temperature Range Blank = Commercial (0C to +70C) Level IT = Industrial (40C to +85C) Bit/Cell Speed Grade (synchronous mode only) A 1-bit -10 = 200 MT/s Classification Package Code 1 Die of CE of R/B I/O C5 = 52-pad VLGA 14mm x 18mm x 1.0mm 1 H1 = 100-ball VBGA 12mm x 18mm x 1.0mm B 1 1 1 Common 1 H2 = 100-ball TBGA 12mm x 18mm x 1.2mm E 2 2 2 Separate 1 H3 = 100-ball LBGA 12mm x 18mm x 1.4mm 1 F 2 2 2 Common J1 = 132-ball VBGA 12mm x 18mm x 1.0mm 1 J2 = 132-ball TBGA 12mm x 18mm x 1.2mm J 4 2 2 Common 1 J3 = 132-ball LBGA 12mm x 18mm x 1.4mm K 4 2 2 Separate 1 WP = 48-pin TSOP (CPL) M 4 4 4 Separate Interface U 8 4 4 Separate A = Async only B = Sync/Async Operating Voltage Range A = V : 3.3V (2.73.6V), V : 3.3V (2.73.6V) CC CCQ Generation Feature Set C = V : 3.3V (2.73.6V), V : 1.8V (1.71.95V) CC CCQ A = First set of device features Note: 1. Pb-free package. PDF: 09005aef83e0bed4 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 M73A 32Gb 64Gb 128Gb 256Gb AsyncSync NAND.pdf Rev. G 1/14 EN 2010 Micron Technology, Inc. All rights reserved.