Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F32G08CBACA, MT29F64G08CEACA, MT29F64G08CFACA, MT29F128G08CXACA, MT29F64G08CECCB, MT29F64G08CFACB MT29F128G08CKCCB, MT29F256G08CUCCB Operation status byte provides software method for Features detecting 1 Open NAND Flash Interface (ONFI) 2.2-compliant Operation completion Multiple-level cell (MLC) technology Pass/fail condition Organization Write-protect status Page size x8: 4320 bytes (4096 + 224 bytes) Data strobe (DQS) signals provide a hardware meth- Block size: 256 pages (1024K + 56K bytes) od for synchronizing data DQ in the synchronous Plane size: 2 planes x 2048 blocks per plane interface Device size: 32Gb: 4096 blocks Copyback operations supported within the plane 64Gb: 8192 blocks from which data is read 128Gb: 16,384 blocks Quality and reliability 256Gb: 32,768 blocks Data retention: JESD47 compliant see qualifica- Synchronous I/O performance tion report 2 Up to synchronous timing mode 5 Endurance: 3000 PROGRAM/ERASE cycles Clock rate: 10ns (DDR) Operating temperature: Read/write throughput per pin: 200 MT/s Commercial: 0C to +70C Asynchronous I/O performance Industrial (IT): 40C to +85C Up to asynchronous timing mode 5 Package Read/write throughput per pin: 50 MT/s 52-pad LGA t t RC/ WC: 20ns (MIN) 48-pin TSOP Array performance 100-ball BGA Read page: 75s (MAX) 1. The ONFI 2.2 specification is available at Notes: Program page: 1300s (TYP) www.onfi.org. Erase block: 3.8ms (TYP) 2. BGA devices up to synchronous timing Operating Voltage Range mode 5. TSOP devices up to synchronous V : 2.73.6V CC timing mode 4. V : 1.71.95V, 2.73.6V CCQ Command set: ONFI NAND Flash Protocol Advanced Command Set Program cache Read cache sequential Read cache random One-time programmable (OTP) mode Multi-plane commands Multi-LUN operations Read unique ID Copyback First block (block address 00h) is valid when ship- ped from factory. For minimum required ECC, see Error Management (page 108). RESET (FFh) required as first command after pow- er-on PDF: 09005aef844335a5 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 l73a 32g 64g 128g 256g asyncsync nand.pdf Rev. D 12/11 EN 2010 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features Part Numbering Information Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Part Numbering MT 29F 32G 08 C B A C A WP ES :C Micron Technology Design Revision C = Third revision NAND Flash 29F = NAND Flash memory Production Status Blank = Production ES = Engineering sample Density 32G = 32Gb Reserved for Future Use 64G = 64Gb 128G = 128Gb Blank 256G = 256Gb Operating Temperature Range Device Width Blank = Commercial (0C to +70C) 08 = 8 bits IT = Industrial (40C to +85C) Level Speed Grade (synchronous mode only) -10 = 200 MT/s Bit/Cell -12 = 166 MT/s C 2-bit Package Code 1 Classification D1 = 52-pad VLGA 11mm x 14mm x 0.9mm 1 Die of CE of R/B I/O H1 = 100-ball VBGA 12mm x 18mm x 1.0mm 1 H2 = 100-ball TBGA 12mm x 18mm x 1.2mm B 1 1 1 Common 1 H3 = 100-ball LBGA 12mm x 18mm x 1.4mm E 2 2 2 Separate 1 WP = 48-pin TSOP (CPL) F 2 2 2 Common Interface K 4 2 2 Separate A = Async only 8 4 4 Separate U B = Sync/Async 4 4 2 Separate X Generation Feature Set C = Third set of device features Operating Voltage Range A = V : 3.3V (2.73.6V), V : 3.3V (2.73.6V) CC CCQ C = V : 3.3V (2.73.6V), V : 1.8V (1.71.95V) CC CCQ 1. Pb-free package. Note: PDF: 09005aef844335a5 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 l73a 32g 64g 128g 256g asyncsync nand.pdf Rev. D 12/11 EN 2010 Micron Technology, Inc. All rights reserved.