MT29F4G08ABADAH4-AITX:D TR Micron

Micron Confidential and Proprietary 4Gb, 8Gb: x8, x16 Automotive NAND Flash Memory Features Automotive NAND Flash Memory MT29F4G08, MT29F4G16, MT29F8G08, MT29F8G16 Option Marking Features Density 1 Open NAND Flash Interface (ONFI) 1.0-compliant 4Gb 4G Single-level cell (SLC) technology 8Gb 8G Organization Bus Width Page size x8: 2112 bytes (2048 + 64 bytes) 8-bit 08 Page size x16: 1056 words (1024 + 32 words) 16-bit 16 Block size: 64 pages (128K + 4K bytes) Operating voltage range Plane size: 2 planes x 2048 blocks per plane V : 2.73.6V A Device size: 4Gb: 4096 blocks 8Gb: 8192 blocks CC V : 1.71.95V B Asynchronous I/O performance CC t t Operating temperature: RC/ WC: 20ns (3.3V), 25ns (1.8V) From -40C to +85C AIT Array performance From 40C to +105C AAT Read page: 45s (TYP) Package Program page: 220s (TYP: 3.3V, 1.8V) 2 48-pin TSOP type 1, CPL WP Array performance 63-ball VFBGA (9.0 x 11.0 x 1.0mm) H4 Read page: 45s (TYP) 63-ball VFBGA (10.5 x 13.0 x HC Program page: 220s (TYP: 3.3V, 1.8V) 1.0mm) Erase block: 700s (TYP) Command set: ONFI NAND Flash Protocol 1. The ONFI 1.0 specification is available at Notes: Read unique ID www.onfi.org. Block lock (1.8V only) 2. CPL = Center parting line. Internal data move Operation status byte provides software method for detecting Operation completion Pass/fail condition Write-protect status WP signal: Write protect entire device Ready/Busy (R/B ) signal provides a hardware method of detecting operation completion First block (block address 00h) is valid when ship- ped from factory No error correction required internal 4-bit ECC en- abled (see Spare Area Mapping for ECC details) RESET (FFh) required as first command after pow- er-on Alternate method of device initialization (Nand Init) after power up (contact factory) Internal data move operations supported within the plane from which data is read Quality and reliability Data retention: 10 years Endurance: 100,000 PROGRAM/ERASE cycles CCMTD-1725822587-3460 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 m60a automotive 4Gb ecc nand.pdf - Rev. C 03/17 EN 2014 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.Micron Confidential and Proprietary 4Gb, 8Gb: x8, x16 Automotive NAND Flash Memory Features Part Numbering Information Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Marketing Part Number Chart Note: Not all combinations are necessarily available. For a list of available devices or for further information on any aspect of these products, please contact your nearest Micron sales office. MT 29F 4G 08 A B A F A 12 - AA T ES :D Micron Technology Design Revision (shrink) Product Family Production Status 29F = NAND Flash memory Blank = Production ES = Engineering sample Density MS = Mechanical sample 1G = 1Gb QS = Qualification sample 2G = 2Gb 4G = 4Gb Special Options 8G = 8Gb Blank 16G = 16Gb X = Product longevity program (PLP) Device Width Operating Temperature Range 01 = 1-bit Blank = Commercial (0C to +70C) 08 = 8-bit IT = Industrial (40C to +85C) 16 = 16-bit AIT = Automotive Industrial (40C to +85C) Level AAT = Automotive (40C to +105C) A = SLC Speed Grade (synchronous mode only) Classification - 12 = 166MT/s Mark Die nCE RnB I/O Channel B 1 1 1 1 Package Code D 2 1 1 1 SF = 16-pin SO (10.3mm x 10.3mm x 2.65mm) J 4 2 2 1 WB = 8-pin U-PDFN (8mm x 6mm x 0.65mm) W9 = 8-pin W-PDFN (8mm x 6mm) Operating Voltage Range 12 = 24-ball TBGA (6mm x 8mm x 1.2mm) A = 3.3V (2.73.6V) WP = 48-pin TSOP Type 1 B = 1.8V (1.71.95V) HC = 63-ball VFBGA (10.5mm x 13mm x 1.0mm) C = VCC: 3.3V (2.73.6V) VCCQ: 1.8V (1.71.95V) H4 = 63-ball VFBGA (9mm x 11mm x1.0mm) Generation Feature Set D = Feature set D Interface F = Feature set F A = Asynchronous only B = Sync/Async G = Feature set G CCMTD-1725822587-3460 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 m60a automotive 4Gb ecc nand.pdf - Rev. C 03/17 EN 2014 Micron Technology, Inc. All rights reserved.