Micron Confidential and Proprietary 4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features NAND Flash Memory MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4, MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP, MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4, MT29F8G08ADBDAH4, MT29F8G16ADADAH4, MT29F8G16ADBDAH4, MT29F16G08AJADAWP First block (block address 00h) is valid when ship- Features ped from factory with ECC. For minimum required 1 Open NAND Flash Interface (ONFI) 1.0-compliant ECC, see Error Management. Single-level cell (SLC) technology Block 0 requires 1-bit ECC if PROGRAM/ERASE cy- Organization cles are less than 1000 Page size x8: 2112 bytes (2048 + 64 bytes) RESET (FFh) required as first command after pow- Page size x16: 1056 words (1024 + 32 words) er-on Block size: 64 pages (128K + 4K bytes) Alternate method of device initialization (Nand In- Plane size: 2 planes x 2048 blocks per plane it) after power up (contact factory) Device size: 4Gb: 4096 blocks 8Gb: 8192 blocks Internal data move operations supported within the 16Gb: 16,384 blocks plane from which data is read Asynchronous I/O performance Quality and reliability t t RC/ WC: 20ns (3.3V), 25ns (1.8V) Data retention: 10 years Array performance Endurance: 100,000 PROGRAM/ERASE cycles 3 Read page: 25s Operating voltage range 3 Program page: 200s (TYP: 1.8V, 3.3V) V : 2.73.6V CC Erase block: 700s (TYP) V : 1.71.95V CC Command set: ONFI NAND Flash Protocol Operating temperature: Advanced command set Commercial: 0C to +70C 4 Program page cache mode Industrial (IT): 40C to +85C 4 Read page cache mode Automotive Industrial (AIT): 40C to +85C One-time programmable (OTP) mode Automotive (AAT): 40C to +105C 4 Two-plane commands Package 2 Interleaved die (LUN) operations 48-pin TSOP type 1, CPL Read unique ID 63-ball VFBGA Block lock (1.8V only) 1. The ONFI 1.0 specification is available at Notes: Internal data move www.onfi.org. Operation status byte provides software method for 2. CPL = Center parting line. detecting 3. See Program and Erase Characteristics for Operation completion t t R ECC and PROG ECC specifications. Pass/fail condition 4. These commands supported only with ECC Write-protect status disabled. Ready/Busy (R/B ) signal provides a hardware method of detecting operation completion WP signal: Write protect entire device PDF: 09005aef83b25735 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 m60a 4gb 8gb 16gb ecc nand.pdf - Rev. R 02/18 EN 2009 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.Micron Confidential and Proprietary 4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features Part Numbering Information Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Marketing Part Number Chart MT 29F 4G 08 A B A D A WP IT ES :D Micron Technology Design Revision (shrink) Product Family Production Status 29F = NAND Flash memory Blank = Production ES = Engineering sample Density MS = Mechanical sample 4G = 4Gb QS = Qualification sample 8G = 8Gb 16G = 16Gb Special Options Blank Device Width X = Product longevity program (PLP) 08 = 8-bit 16 = 16-bit Operating Temperature Range Blank = Commercial (0C to +70C) Level IT = Industrial (40C to +85C) A = SLC AIT = Automotive Industrial (40C to +85C) AAT = Automotive (40C to +105C) Classification Mark Die nCE RnB I/O Channels B 1 1 1 1 Speed Grade D 2 1 1 1 Blank J 4 2 2 1 Package Code Operating Voltage Range WP = 48-pin TSOP Type 1 HC = 63-ball VFBGA (10.5 x 13 x 1.0mm) A = 3.3V (2.73.6V) B = 1.8V (1.71.95V) H4 = 63-ball VFBGA (9 x 11 x 1.0mm) Interface Feature Set A = Async only D = Feature set D PDF: 09005aef83b25735 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 m60a 4gb 8gb 16gb ecc nand.pdf - Rev. R 02/18 EN 2009 Micron Technology, Inc. All rights reserved.