MT29F4G08ABBFAH4-AIT:F Micron

Micron Confidential and Proprietary 4Gb: x8 NAND Flash Memory Features NAND Flash Memory MT29F4G08ABBFAH4 2 ECC: 8-bit internal ECC is disabled at default (it Features can be toggled using the SET FEATURE command) 1 Open NAND Flash Interface (ONFI) 1.0-compliant Blocks 70 are valid when shipped from factory with Single-level cell (SLC) technology ECC for minimum required ECC, see Error Man- Organization agement. Page size 8: 4352 bytes (4096 + 256 bytes) RESET (FFh) required as first command after pow- Block size: 64 pages er-on Number of planes: 1 Alternate method of automatic device initialization Device size: 4Gb after power-up (contact factory) Asynchronous I/O performance Internal data move operations supported within the t t RC/ WC: 30ns (1.8V) plane from which data is read Array performance Quality and reliability Read page: 115s (MAX) with on-die ECC ena- Endurance: 100,000 PROGRAM/ERASE cycles bled Data retention: JESD47G-compliant see qualifi- Read page: 25s (MAX) with on-die ECC disabled cation report Program page: 200s (TYP) with on-die ECC dis- Additional: Uncycled data retention: 10 years abled 24/7 85C Program page: 240s (TYP) with on-die ECC ena- bled Options Marking Erase block: 2ms (TYP) Operating voltage range Command set: ONFI NAND Flash protocol V : 1.71.95V A CC Advanced command set Operating temperature range Program page cache mode Industrial (IT): 40C to +85C IT Read page cache mode Package Permanent block locking (blocks 47:0) 63-ball VFBGA (9mm 11mm H4 One-time programmable (OTP) mode 1.0mm) Block lock Programmable drive strength 1. The ONFI 1.0 specification is available at Notes: Read unique ID www.onfi.org. Internal data move 2. Refer to the Part Numbering Information to Operation status byte provides software method for check the status of the ECC. detecting Operation completion Pass/Fail condition Write-protect status Ready/Busy (R/B ) signal provides a hardware method of detecting operation completion WP signal: Write protect entire device CCM005-816717818-10490 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 m70a 4gb 1 8v IT parallel nand.pdf Rev. C 1/19 EN 2018 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.Micron Confidential and Proprietary 4Gb: x8 NAND Flash Memory Features Part Numbering Information Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Marketing Part Number Chart MT 29F 4G 08 A B A F A H4 - AAT ES :F Design Revision (shrink) Micron Technology D = Design Revision D Product Family E = Design Revision E 29F = NAND Flash memory F = Design Revision F G = Design Revision G Density 1G = 1Gb Production Status 2G = 2Gb Blank = Production 4G = 4Gb ES = Engineering sample 8G = 8Gb MS = Mechanical sample QS = Qualification sample 16G = 16Gb Device Width Special Options 08 = 8-bit E = Internal ECC enabled by default (Parallel) 16 = 16-bit Blank = Internal ECC disabled by default (Parallel) Level Operating Temperature Range A = SLC Blank = Commercial (0C to +70C) IT = Industrial (40C to +85C) Classification AIT = Automotive Industrial (40C to +85C) Mark Die nCE RnB I/O Channel AAT = Automotive (40C to +105C) B 1 1 1 1 Speed Grade D 2 1 1 1 12 = 166 MT/s (synchronous mode) J 4 2 2 1 Blank = Asynchronous mode Operating Voltage Range Package Code A = 3.3V (2.73.6V) SF = 16-pin SO (10.3mm x 10.3mm x 2.65mm) B = 1.8V (1.71.95V) WB = 8-pin U-PDFN (8mm x 6mm x 0.65mm) C = V : 3.3V (2.73.6V) V : 1.8V (1.71.95V) CC CCQ W9 = 8-pin W-PDFN (8mm x 6mm) 12 = 24-ball TBGA (6mm x 8mm x 1.2mm) Generation Feature Set WP = 48-pin TSOP Type 1 D = Feature set D HC = 63-ball VFBGA (10.5mm x 13mm x 1.0mm) E = Feature set E H4 = 63-ball VFBGA (9mm x 11mm x1.0mm) F = Feature set F G = Feature set G Interface A = Asynchronous only B = Sync/Async CCM005-816717818-10490 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 m70a 4gb 1 8v IT parallel nand.pdf Rev. C 1/19 EN 2018 Micron Technology, Inc. All rights reserved.