MT35XU512ABA1G12-0SIT Micron

Preliminary Xccela Flash Memory Data Sheet Brief Features Xccela Flash Memory Data Sheet Brief MT35X 1.8/3V, Octal I/O, 4KB/32KB/128KB Sector Erase Options Marking Features Voltage SPI-compatible Xccela bus interface 1.72.0V U Octal DDR protocol 2.73.6V L Extended-SPI protocol with octal commands Density Single and double transfer rate (SDR/DDR) 256Mb 256 Clock frequency: 512Mb 512 166 MHz (MAX) in SDR (166 MB/s) (1.8V) 1Gb 01G 200 MHz (MAX) in DDR (400 MB/s) with DQS 2Gb 02G (1.8V) Device stacking 133 MHz (MAX) in SDR (133 MB/s) (3.0V) Monolithic A 133 MHz (MAX) in DDR (266MB/s) with DQS 2 die stacked B (3.0V) 4 die stacked C Execute-in-place (XIP) Device Generation B PROGRAM/ERASE SUSPEND operations Die revision A Volatile and nonvolatile configuration settings Configuration Software reset Boot in SDR x1 1 Reset pin available Boot in DDR x8 2 3-byte and 4-byte address modes enable memory Sector Size access beyond 128Mb 128KB G Dedicated 64-byte OTP area outside main memory Packages: JEDEC-standard, RoHS-com- Readable and user-lockable pliant Permanent lock with PROGRAM OTP command 24-ball T-PBGA 05/6mm x 8mm 12 Erase capability (5 x 5 array) Bulk erase for monolithic, die erase for stacked Security features devices Standard security 0 Sector erase 128KB uniform granularity Special options Subsector erase 4KB, 32KB granularity Standard S Security and write protection Automotive A Volatile and nonvolatile locking and software Operating temperature range write protection for each 128KB sector From 40C to +85C IT Nonvolatile configuration locking and password From 40C to +105C AT protection From 40C to +125C UT Protection management register offering en- hanced security features Hardware write protection: nonvolatile bits (BP 3:0 and TB) define protected area size Program/erase protection during power-up CRC detects accidental changes to raw data Electronic signature JEDEC-standard 3-byte signature Extended device ID: two additional bytes identify device factory options JESD47I-compliant Minimum 100,000 ERASE cycles per sector Data retention: 20 years (TYP) CCMTD-1718347970-10442 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 Xccela summary Rev. A 04/18 2018 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by Micron without notice. Products are only warranted by Micron to meet Microns production data sheet specifications.Preliminary Xccela Flash Memory Data Sheet Brief Features Part Number Ordering Micron Xccela flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Part Number Ordering Information - MT 35X L xxx A B A 1 G 12 0 S IT ES Micron Technology Production Status Blank = Production Part Family ES = Engineering samples 35X = Xccela flash memory QS = Qualification samples Voltage Operating Temperature L = 2.73.6V IT = 40C to +85C U = 1.72.0V AT = 40C to +105C UT = 40C to +125C Density 256 = 256Mb Special Options 512 = 512Mb S = Standard 01G = 1Gb A = Automotive grade AEC-Q100 02G = 2Gb Security Features Stack 0 = Standard default security A = 1 die/1 S B = 2 die/1 S Package Codes C = 4 die/1 S 12 = 24-ball T-PBGA, 05/6 x 8mm (5 x 5 array) Device Generation Sector Size B = 2nd generation G = Uniform 128KB Die Revision I/O Pin Configuration Option A = Rev. A 1 = Boot in SDR x1 2 = Boot in DDR x8 CCMTD-1718347970-10442 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 Xccela summary Rev. A 04/18 2018 Micron Technology, Inc. All rights reserved.