X-On Electronics has gained recognition as a prominent supplier of MT40A512M16JY-083E AAT:B DRAM across the USA, India, Europe, Australia, and various other global locations. MT40A512M16JY-083E AAT:B DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT40A512M16JY-083E AAT:B Micron

MT40A512M16JY-083E AAT:B electronic component of Micron
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Part No.MT40A512M16JY-083E AAT:B
Manufacturer: Micron
Category: DRAM
Description: DRAM Chip DDR4 SDRAM 8Gbit 512Mx16 1.2V Automotive 96-Pin FBGA
Datasheet: MT40A512M16JY-083E AAT:B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1368
Multiples : 1
1368 : USD 20.9849
13680 : USD 20.855
136800 : USD 20.0623
684000 : USD 19.6335
N/A

Obsolete
0
MOQ : 1368
Multiples : 1368
1368 : USD 17.642
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 22.9491
10 : USD 21.3852
25 : USD 21.1482
50 : USD 21.1482
100 : USD 19.3593
250 : USD 18.6958
500 : USD 18.6958
1000 : USD 18.0323
2000 : USD 18.0323
N/A

Obsolete
   
Manufacturer
Product Category
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We are delighted to provide the MT40A512M16JY-083E AAT:B from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT40A512M16JY-083E AAT:B and other electronic components in the DRAM category and beyond.

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8Gb: x8, x16 Automotive DDR4 SDRAM Features Automotive DDR4 SDRAM MT40A1G8 MT40A512M16 1 Options Marking Features Configuration V = V = 1.2V 60mV DD DDQ 1 Gig x 8 1G8 V = 2.5V 125mV/+250mV PP 512 Meg x 16 512M16 On-die, internal, adjustable V generation REFDQ 78-ball FBGA package (Pb-free) x8 1.2V pseudo open-drain I/O 8mm x 12mm Rev. B WE Refresh time of 8192-cycle at T temperature range: C 7.5mm x 11mm Rev. E, R SA, AG 64ms at 40C to 85C 96-ball FBGA package (Pb-free) x16 32ms at 85C to 95C 8mm x 14mm Rev. B JY 16ms at 95C to 105C 7.5mm x 13.5mm Rev. E LY, AD 8ms at 105C to 125C 7.5mm x 13mm Rev. R TD 16 internal banks (x8): 4 groups of 4 banks each Timing cycle time 8 internal banks (x16): 2 groups of 4 banks each 0.625ns CL = 22 (DDR4-3200) -062E 8n-bit prefetch architecture 0.750ns CL = 18 (DDR4-2666) -075E Programmable data strobe preambles 0.833ns CL = 16 (DDR4-2400) -083E Data strobe preamble training Product certification Command/Address latency (CAL) Automotive A Multipurpose register read and write capability Operating temperature Write leveling Industrial (40 T 95C) IT C Self refresh mode Automotive (40 T 105C) AT C Low-power auto self refresh (LPASR) 3 Ultra-high (40 T 125C) UT C Temperature controlled refresh (TCR) Revision :B, :E, :R Fine granularity refresh 1. Not all options listed can be combined to Notes: Self refresh abort define an offered product. Use the part Maximum power saving catalog search on 8Gb: x8, x16 Automotive DDR4 SDRAM Features Table 1: Key Timing Parameters 1 t t t Speed Grade Data Rate (MT/s) Target CL-nRCD-nRP AA (ns) RCD (ns) RP (ns) -062E 3200 22-22-22 13.75 13.75 13.75 -075E 2666 18-18-18 13.5 13.5 13.5 -083E 2400 16-16-16 13.32 13.32 13.32 Note: 1. Refer to the Speed Bin Tables for backward compatibility. Table 2: Addressing Parameter 1024 Meg x 8 512 Meg x 16 Number of bank groups 4 2 Bank group address BG 1:0 BG0 Bank count per group 4 4 Bank address in bank group BA 1:0 BA 1:0 Row addressing 64K (A 15:0 ) 64K (A 15:0 ) Column addressing 1K (A 9:0 ) 1K (A 9:0 ) 1 Page size 1KB 2KB Note: 1. Page size is per bank, calculated as follows: COLBITS Page size = 2 ORG/8, where COLBIT = the number of column address bits and ORG = the number of DQ bits. Figure 1: Order Part Number Example ( DPSOH 3DUW 1XPEHU % 7 07 * :( ( 0DUN *LJ * % ( 5 EDOO PP PP )%* :( PP )%* EDOO PP 6 * EDOO PP PP )%* -< ,7 EDOO PP PP )%* < / XWRPRWLYH EDOO PP PP )%* 7 0DUN W &. QV &/ 3URGXFW FHUWLILFDWLRQ 0DUN W &. QV &/ XWRPRWLYH W &. QV &/ CCMTD-1406124318-10419 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 8gb auto ddr4 dram.pdf - Rev. J 02/2021 EN 2016 Micron Technology, Inc. All rights reserved. ( ( ( 6SHHG *UDGH 87 8OWUD KLJK 7 ,QGXVWULDO 1RQH &RPPHUFLDO 0DUN &DVH 7 HPSHUDWXUH 0DUN 3DFNDJH 0 0HJ 5HYLVLRQ &RQILJXUDWLRQ 07 5HYLVLRQ 6SHHG 3DFNDJH &RQILJXUDWLRQ

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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