X-On Electronics has gained recognition as a prominent supplier of MT40A512M16LY-062E AAT:E DRAM across the USA, India, Europe, Australia, and various other global locations. MT40A512M16LY-062E AAT:E DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT40A512M16LY-062E AAT:E Micron

MT40A512M16LY-062E AAT:E electronic component of Micron
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Part No.MT40A512M16LY-062E AAT:E
Manufacturer: Micron
Category: DRAM
Description: DRAM DDR4 8G 512MX16 FBGA
Datasheet: MT40A512M16LY-062E AAT:E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1080
Multiples : 1080
1080 : USD 19.6838
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 14.9292
10 : USD 14.5173
30 : USD 14.1055
50 : USD 13.7966
100 : USD 13.3848
250 : USD 12.973
500 : USD 12.5611
N/A

Obsolete
0
MOQ : 1080
Multiples : 1080
1080 : USD 11.4248
2160 : USD 11.3468
5400 : USD 11.0347
N/A

Obsolete
   
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We are delighted to provide the MT40A512M16LY-062E AAT:E from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT40A512M16LY-062E AAT:E and other electronic components in the DRAM category and beyond.

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8Gb: x8, x16 Automotive DDR4 SDRAM Features Automotive DDR4 SDRAM MT40A1G8 MT40A512M16 1 Options Marking Features Configuration V = V = 1.2V 60mV DD DDQ 1 Gig x 8 1G8 V = 2.5V 125mV/+250mV PP 512 Meg x 16 512M16 On-die, internal, adjustable V generation REFDQ 78-ball FBGA package (Pb-free) x8 1.2V pseudo open-drain I/O 8mm x 12mm Rev. B WE Refresh time of 8192-cycle at T temperature range: C 7.5mm x 11mm Rev. E SA 64ms at 40C to 85C 96-ball FBGA package (Pb-free) x16 32ms at 85C to 95C 8mm x 14mm Rev. B JY 16ms at 95C to 105C 7.5mm x 13.5mm Rev. E LY 8ms at 105C to 125C Timing cycle time 16 internal banks (x8): 4 groups of 4 banks each 0.625ns @ CL = 22 (DDR4-3200) -062E 8 internal banks (x16): 2 groups of 4 banks each 0.750ns @ CL = 18 (DDR4-2666) -075E 8n-bit prefetch architecture 0.833ns @ CL = 16 (DDR4-2400) -083E Programmable data strobe preambles Product certification Data strobe preamble training Automotive A Command/Address latency (CAL) Operating temperature Multipurpose register read and write capability Industrial (40 T 95C) IT C Write leveling Automotive (40 T 105C) AT C Self refresh mode 3 Ultra-high (40 T 125C) UT C Low-power auto self refresh (LPASR) Revision :B, :E Temperature controlled refresh (TCR) 1. Not all options listed can be combined to Notes: Fine granularity refresh define an offered product. Use the part Self refresh abort catalog search on 8Gb: x8, x16 Automotive DDR4 SDRAM Features Table 1: Key Timing Parameters 1 t t t Speed Grade Data Rate (MT/s) Target CL-nRCD-nRP AA (ns) RCD (ns) RP (ns) -062E 3200 22-22-22 13.75 13.75 13.75 -075E 2666 18-18-18 13.5 13.5 13.5 -083E 2400 16-16-16 13.32 13.32 13.32 Note: 1. Refer to the Speed Bin Tables for backward compatibility. Table 2: Addressing Parameter 1024 Meg x 8 512 Meg x 16 Number of bank groups 4 2 Bank group address BG[1:0] BG0 Bank count per group 4 4 Bank address in bank group BA[1:0] BA[1:0] Row addressing 64K (A[15:0]) 64K (A[15:0]) Column addressing 1K (A[9:0]) 1K (A[9:0]) 1 Page size 1KB 2KB Note: 1. Page size is per bank, calculated as follows: COLBITS Page size = 2 ORG/8, where COLBIT = the number of column address bits and ORG = the number of DQ bits. Figure 1: Order Part Number Example ([DPSOH3DUW1XPEHU % 7 07$*:(($$   ^ 0DUN *LJ[ * % ( 0DUN EDOOPP[PP)%*$ :( PP)%*$ EDOOPP[ 6$ EDOOPP[PP)%*$ -< ,QGXVWULDOWHPSHUDWXUH ,7 EDOOPP[PP)%*$ $XWRPRWLYH 3URGXFWFHUWLILFDWLRQ 0DUN W &. QV&/  $XWRPRWLYH $ W &. QV&/  CCMTD-1406124318-10419 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 8gb_auto_ddr4_dram.pdf - Rev. G 08/19 EN 2016 Micron Technology, Inc. All rights reserved. &. QV&/  ( ( ( 6SHHG*UDGH 0DUN 87 8OWUDKLJK $7 /< 1RQH &RPPHUFLDO 0DUN &DVH7 HPSHUDWXUH 3DFNDJH 0 0HJ[ 5HYLVLRQ &RQILJXUDWLRQ 07$ 5HYLVLRQ 6SHHG 3DFNDJH &RQILJXUDWLRQ

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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