X-On Electronics has gained recognition as a prominent supplier of W9751G6KB25L DRAM across the USA, India, Europe, Australia, and various other global locations. W9751G6KB25L DRAM are a product manufactured by Winbond. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

W9751G6KB25L Winbond

W9751G6KB25L electronic component of Winbond
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Part No.W9751G6KB25L
Manufacturer: Winbond
Category: DRAM
Description: DRAM 512Mb DDR2-800, x16
Datasheet: W9751G6KB25L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
0
MOQ : 209
Multiples : 1
209 : USD 1.7832
500 : USD 1.6848
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 6.5503
10 : USD 2.4026
25 : USD 2.3716
50 : USD 2.3716
100 : USD 2.1644
250 : USD 2.1023
500 : USD 2.0919
1000 : USD 1.9677
5000 : USD 1.8123
N/A

Obsolete
   
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We are delighted to provide the W9751G6KB25L from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the W9751G6KB25L and other electronic components in the DRAM category and beyond.

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W9751G6KB 8M 4 BANKS 16 BIT DDR2 SDRAM Table of Contents- 1. GENERAL DESCRIPTION ................................................................................................................... 4 2. FEATURES ........................................................................................................................................... 4 3. ORDER INFORMATION ....................................................................................................................... 5 4. KEY PARAMETERS ............................................................................................................................. 5 5. BALL CONFIGURATION ...................................................................................................................... 6 6. BALL DESCRIPTION ............................................................................................................................ 7 7. BLOCK DIAGRAM ................................................................................................................................ 8 8. FUNCTIONAL DESCRIPTION .............................................................................................................. 9 8.1 Power-up and Initialization Sequence ................................................................................................... 9 8.2 Mode Register and Extended Mode Registers Operation ................................................................... 10 8.2.1 Mode Register Set Command (MRS)............................................................................... 10 8.2.2 Extend Mode Register Set Commands (EMRS) .............................................................. 11 8.2.3 Off-Chip Driver (OCD) Impedance Adjustment ................................................................ 15 8.2.4 On-Die Termination (ODT) ............................................................................................... 18 8.2.5 ODT related timings ......................................................................................................... 18 8.3 Command Function ............................................................................................................................. 20 8.3.1 Bank Activate Command .................................................................................................. 20 8.3.2 Read Command ............................................................................................................... 20 8.3.3 Write Command ............................................................................................................... 21 8.3.4 Burst Read with Auto-precharge Command ..................................................................... 21 8.3.5 Burst Write with Auto-precharge Command ..................................................................... 21 8.3.6 Precharge All Command .................................................................................................. 21 8.3.7 Self Refresh Entry Command .......................................................................................... 21 8.3.8 Self Refresh Exit Command ............................................................................................. 22 8.3.9 Refresh Command ........................................................................................................... 22 8.3.10 No-Operation Command .................................................................................................. 23 8.3.11 Device Deselect Command .............................................................................................. 23 8.4 Read and Write access modes ........................................................................................................... 23 8.4.1 Posted CAS ..................................................................................................................... 23 8.4.2 Burst mode operation ....................................................................................................... 24 8.4.3 Burst read mode operation ............................................................................................... 25 8.4.4 Burst write mode operation .............................................................................................. 25 8.4.5 Write data mask ............................................................................................................... 26 8.5 Burst Interrupt ..................................................................................................................................... 26 8.6 Precharge operation ............................................................................................................................ 27 8.6.1 Burst read operation followed by precharge ..................................................................... 27 8.6.2 Burst write operation followed by precharge .................................................................... 27 8.7 Auto-precharge operation ................................................................................................................... 27 8.7.1 Burst read with Auto-precharge ....................................................................................... 28 8.7.2 Burst write with Auto-precharge ....................................................................................... 28 8.8 Refresh Operation ............................................................................................................................... 29 8.9 Power Down Mode .............................................................................................................................. 29 8.9.1 Power Down Entry ........................................................................................................... 30 8.9.2 Power Down Exit .............................................................................................................. 30 Publication Release Date: Jan. 23, 2017 Revision: A09 - 1 - W9751G6KB 8.10 Input clock frequency change during precharge power down ............................................................. 30 9. OPERATION MODE ........................................................................................................................... 31 9.1 Command Truth Table ........................................................................................................................ 31 9.2 Clock Enable (CKE) Truth Table for Synchronous Transitions ........................................................... 32 9.3 Data Mask (DM) Truth Table ............................................................................................................... 32 9.4 Function Truth Table ........................................................................................................................... 33 9.5 Simplified Stated Diagram ................................................................................................................... 36 10. ELECTRICAL CHARACTERISTICS ................................................................................................... 37 10.1 Absolute Maximum Ratings ................................................................................................................ 37 10.2 Operating Temperature Condition ....................................................................................................... 37 10.3 Recommended DC Operating Conditions ........................................................................................... 37 10.4 ODT DC Electrical Characteristics ...................................................................................................... 38 10.5 Input DC Logic Level ........................................................................................................................... 38 10.6 Input AC Logic Level ........................................................................................................................... 38 10.7 Capacitance ........................................................................................................................................ 39 10.8 Leakage and Output Buffer Characteristics ........................................................................................ 39 10.9 DC Characteristics .............................................................................................................................. 40 10.10 IDD Measurement Test Parameters .......................................................................................... 42 10.11 AC Characteristics ..................................................................................................................... 43 10.11.1 AC Characteristics and Operating Condition for -18/18I/18J speed grade ....................... 43 10.11.2 AC Characteristics and Operating Condition for -25/25L/25I/25J/-3 speed grade ............ 45 10.12 AC Input Test Conditions ........................................................................................................... 66 10.13 Differential Input/Output AC Logic Levels .................................................................................. 66 10.14 AC Overshoot / Undershoot Specification ................................................................................. 67 10.14.1 AC Overshoot / Undershoot Specification for Address and Control Pins: ........................ 67 10.14.2 AC Overshoot / Undershoot Specification for Clock, Data, Strobe and Mask pins: .......... 67 11. TIMING WAVEFORMS ....................................................................................................................... 68 11.1 Command Input Timing ....................................................................................................................... 68 11.2 ODT Timing for Active/Standby Mode ................................................................................................. 69 11.3 ODT Timing for Power Down Mode .................................................................................................... 69 11.4 ODT Timing mode switch at entering power down mode .................................................................... 70 11.5 ODT Timing mode switch at exiting power down mode ...................................................................... 71 11.6 Data output (read) timing .................................................................................................................... 72 11.7 Burst read operation: RL=5 (AL=2, CL=3, BL=4) ................................................................................ 72 11.8 Data input (write) timing ...................................................................................................................... 73 11.9 Burst write operation: RL=5 (AL=2, CL=3, WL=4, BL=4) .................................................................... 73 11.10 Seamless burst read operation: RL = 5 ( AL = 2, and CL = 3, BL = 4) ...................................... 74 11.11 Seamless burst write operation: RL = 5 ( WL = 4, BL = 4) ......................................................... 74 11.12 Burst read interrupt timing: RL =3 (CL=3, AL=0, BL=8) ............................................................. 75 11.13 Burst write interrupt timing: RL=3 (CL=3, AL=0, WL=2, BL=8) .................................................. 75 11.14 Write operation with Data Mask: WL=3, AL=0, BL=4) ............................................................... 76 11.15 Burst read operation followed by precharge: RL=4 (AL=1, CL=3, BL=4, tRTP 2clks) ............ 77 11.16 Burst read operation followed by precharge: RL=4 (AL=1, CL=3, BL=8, tRTP 2clks) ............ 77 11.17 Burst read operation followed by precharge: RL=5 (AL=2, CL=3, BL=4, tRTP 2clks) ............ 78 11.18 Burst read operation followed by precharge: RL=6 (AL=2, CL=4, BL=4, tRTP 2clks) ............ 78 11.19 Burst read operation followed by precharge: RL=4 (AL=0, CL=4, BL=8, tRTP > 2clks) ............ 79 11.20 Burst write operation followed by precharge: WL = (RL-1) = 3 .................................................. 79 11.21 Burst write operation followed by precharge: WL = (RL-1) = 4 .................................................. 80 11.22 Burst read operation with Auto-precharge: RL=4 (AL=1, CL=3, BL=8, tRTP 2clks) ............... 80 11.23 Burst read operation with Auto-precharge: RL=4 (AL=1, CL=3, BL=4, tRTP > 2clks) ............... 81 Publication Release Date: Jan. 23, 2017 Revision: A09 - 2 -

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
WINBOND ELECTRONICS
WINBOND ELECTRONICS CORP AMERICA
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