X-On Electronics has gained recognition as a prominent supplier of W97AH2KBVX1I DRAM across the USA, India, Europe, Australia, and various other global locations. W97AH2KBVX1I DRAM are a product manufactured by Winbond. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

W97AH2KBVX1I Winbond

W97AH2KBVX1I electronic component of Winbond
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Part No.W97AH2KBVX1I
Manufacturer: Winbond
Category: DRAM
Description: DRAM 1Gb LPDDR2, x32, 533MHz, -40 ~ 85C
Datasheet: W97AH2KBVX1I Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
0
MOQ : 168
Multiples : 1
168 : USD 6.7114
1680 : USD 6.1563
16800 : USD 4.527
84000 : USD 3.7394
168000 : USD 3.7338
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 8.3903
10 : USD 5.6376
25 : USD 5.5296
50 : USD 5.4864
100 : USD 5.0004
168 : USD 4.9788
504 : USD 4.968
1008 : USD 4.6548
2520 : USD 4.536
N/A

Obsolete
   
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We are delighted to provide the W97AH2KBVX1I from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the W97AH2KBVX1I and other electronic components in the DRAM category and beyond.

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W97AH6KB / W97AH2KB LPDDR2-S4B 1Gb Table of Contents- 1. GENERAL DESCRIPTION ............................................................................................................................................ 6 2. FEATURES .................................................................................................................................................................... 6 3. ORDER INFORMATION ................................................................................................................................................ 7 4. PIN CONFIGURATION .................................................................................................................................................. 8 4.1 134 Ball VFBGA ............................................................................................................................................................. 8 4.2 168 Ball WFBGA ............................................................................................................................................................ 9 5. PIN DESCRIPTION ..................................................................................................................................................... 10 5.1 Basic Functionality ....................................................................................................................................................... 10 5.2 Addressing Table ......................................................................................................................................................... 11 6. BLOCK DIAGRAM ....................................................................................................................................................... 12 7. FUNCTIONAL DESCRIPTION ..................................................................................................................................... 13 7.1 Simplified LPDDR2 State Diagram .............................................................................................................................. 13 7.1.1 Simplified LPDDR2 Bus Interface State Diagram ......................................................................................................... 14 7.2 Power-up, Initialization, and Power-Off ........................................................................................................................ 15 7.2.1 Power Ramp and Device Initialization .......................................................................................................................... 15 7.2.2 Timing Parameters for Initialization .............................................................................................................................. 17 7.2.3 Power Ramp and Initialization Sequence .................................................................................................................... 17 7.2.4 Initialization after Reset (without Power ramp) ............................................................................................................. 18 7.2.5 Power-off Sequence .................................................................................................................................................... 18 7.2.6 Timing Parameters Power-Off ..................................................................................................................................... 18 7.2.7 Uncontrolled Power-Off Sequence .............................................................................................................................. 18 7.3 Mode Register Definition .............................................................................................................................................. 19 7.3.1 Mode Register Assignment and Definition ................................................................................................................... 19 7.3.1.1 Mode Register Assignment ............................................................................................................................... 19 7.3.2 MR0 Device Information (MA 7:0 = 00H) ................................................................................................................... 20 7.3.3 MR1 Device Feature 1 (MA 7:0 = 01H) ...................................................................................................................... 20 7.3.3.1 Burst Sequence by Burst Length (BL), Burst Type (BT), and Warp Control (WC) .............................................. 21 7.3.3.2 Non Wrap Restrictions ...................................................................................................................................... 21 7.3.4 MR2 Device Feature 2 (MA 7:0 = 02H) ...................................................................................................................... 22 7.3.5 MR3 I/O Configuration 1 (MA 7:0 = 03H) ................................................................................................................... 22 7.3.6 MR4 Device Temperature (MA 7:0 = 04H) ................................................................................................................. 22 7.3.7 MR5 Basic Configuration 1 (MA 7:0 = 05H) ............................................................................................................... 23 7.3.8 MR6 Basic Configuration 2 (MA 7:0 = 06H) ............................................................................................................... 23 7.3.9 MR7 Basic Configuration 3 (MA 7:0 = 07H) ............................................................................................................... 23 7.3.10 MR8 Basic Configuration 4 (MA 7:0 = 08H) ............................................................................................................... 23 7.3.11 MR9 Test Mode (MA 7:0 = 09H) ................................................................................................................................ 23 7.3.12 MR10 Calibration (MA 7:0 = 0AH) ............................................................................................................................. 24 7.3.13 MR16 PASR Bank Mask (MA 7:0 = 10H) .................................................................................................................. 24 7.3.14 MR17 PASR Segment Mask (MA 7:0 = 11H) ............................................................................................................ 25 7.3.15 MR32 DQ Calibration Pattern A (MA 7:0 = 20H) ........................................................................................................ 25 7.3.16 MR40 DQ Calibration Pattern B (MA 7:0 = 28H) ........................................................................................................ 25 7.3.17 MR63 Reset (MA 7:0 = 3FH): MRW only ................................................................................................................... 25 7.4 Command Definitions and Timing Diagrams ................................................................................................................ 26 7.4.1 Activate Command ...................................................................................................................................................... 26 7.4.1.1 Activate Command Cycle: tRCD = 3, tRP = 3, tRRD = 2 ................................................................................... 26 7.4.1.2 tFAW Timing ..................................................................................................................................................... 27 7.4.1.3 Command Input Setup and Hold Timing............................................................................................................ 27 7.4.1.4 CKE Input Setup and Hold Timing .................................................................................................................... 28 7.4.2 Read and Write Access Modes.................................................................................................................................... 28 7.4.3 Burst Read Command ................................................................................................................................................. 28 7.4.3.1 Data Output (Read) Timing (tDQSCKmax) ........................................................................................................ 29 7.4.3.2 Data Output (Read) Timing (tDQSCKmin) ......................................................................................................... 30 Publication Release Date: Apr. 10, 2018 Revision: A01-002 - 1 - W97AH6KB / W97AH2KB 7.4.3.3 Burst Read: RL = 5, BL = 4, tDQSCK > tCK ...................................................................................................... 30 7.4.3.4 Burst Read: RL = 3, BL = 8, tDQSCK < tCK ...................................................................................................... 31 7.4.3.5 LPDDR2: tDQSCKDL Timing ............................................................................................................................ 31 7.4.3.6 LPDDR2: tDQSCKDM Timing ........................................................................................................................... 32 7.4.3.7 LPDDR2: tDQSCKDS Timing............................................................................................................................ 32 7.4.3.8 Burst Read Followed by Burst Write: RL = 3, WL = 1, BL = 4 ............................................................................ 33 7.4.3.9 Seamless Burst Read: RL = 3, BL= 4, tCCD = 2 ............................................................................................... 33 7.4.4 Reads Interrupted by a Read ....................................................................................................................................... 34 7.4.4.1 Read Burst Interrupt Example: RL = 3, BL= 8, tCCD = 2 ................................................................................... 34 7.4.5 Burst Write Operation .................................................................................................................................................. 34 7.4.5.1 Data Input (Write) Timing .................................................................................................................................. 35 7.4.5.2 Burst Write: WL = 1, BL= 4 ............................................................................................................................... 35 7.4.5.3 Burst Write Followed by Burst Read: RL = 3, WL= 1, BL= 4 .............................................................................. 36 7.4.5.4 Seamless Burst Write: WL= 1, BL = 4, tCCD = 2............................................................................................... 36 7.4.6 Writes Interrupted by a Write ....................................................................................................................................... 37 7.4.6.1 Write Burst Interrupt Timing: WL = 1, BL = 8, tCCD = 2 .................................................................................... 37 7.4.7 Burst Terminate ........................................................................................................................................................... 37 7.4.7.1 Burst Write Truncated by BST: WL = 1, BL = 16 ............................................................................................... 38 7.4.7.2 Burst Read Truncated by BST: RL = 3, BL = 16 ................................................................................................ 38 7.4.8 Write Data Mask .......................................................................................................................................................... 39 7.4.8.1 Write Data Mask Timing .................................................................................................................................... 39 7.4.9 Precharge Operation ................................................................................................................................................... 40 7.4.9.1 Bank Selection for Precharge by Address Bits .................................................................................................. 40 7.4.10 Burst Read Operation Followed by Precharge ............................................................................................................. 40 7.4.10.1 Burst Read Followed by Precharge: RL = 3, BL = 8, RU(tRTP(min)/tCK) = 2 .................................................... 41 7.4.10.2 Burst Read Followed by Precharge: RL = 3, BL = 4, RU(tRTP(min)/tCK) = 3 .................................................... 41 7.4.11 Burst Write Followed by Precharge ............................................................................................................................. 42 7.4.11.1 Burst Write Followed by Precharge: WL = 1, BL = 4 .......................................................................................... 42 7.4.12 Auto Precharge Operation ........................................................................................................................................... 43 7.4.13 Burst Read with Auto-Precharge ................................................................................................................................. 43 7.4.13.1 Burst Read with Auto-Precharge: RL = 3, BL = 4, RU(tRTP(min)/tCK) = 2 ........................................................ 43 7.4.14 Burst Write with Auto-Precharge .................................................................................................................................. 44 7.4.14.1 Burst Write with Auto-Precharge: WL = 1, BL = 4 .............................................................................................. 44 7.4.14.2 Precharge & Auto Precharge Clarification ......................................................................................................... 45 7.4.15 Refresh Command ...................................................................................................................................................... 46 7.4.15.1 Command Scheduling Separations Related to Refresh ..................................................................................... 47 7.4.16 LPDDR2 SDRAM Refresh Requirements .................................................................................................................... 47 7.4.16.1 Definition of tSRF .............................................................................................................................................. 48 7.4.16.2 Regular, Distributed Refresh Pattern ................................................................................................................. 50 7.4.16.3 Allowable Transition from Repetitive Burst Refresh ........................................................................................... 50 7.4.16.4 NOT-Allowable Transition from Repetitive Burst Refresh .................................................................................. 51 7.4.16.5 Recommended Self-Refresh Entry and Exit ...................................................................................................... 51 7.4.16.6 All Bank Refresh Operation ............................................................................................................................... 52 7.4.16.7 Per Bank Refresh Operation ............................................................................................................................. 52 7.4.17 Self Refresh Operation ................................................................................................................................................ 53 7.4.18 Partial Array Self-Refresh: Bank Masking .................................................................................................................... 54 7.4.19 Partial Array Self-Refresh: Segment Masking .............................................................................................................. 54 7.4.20 Mode Register Read Command .................................................................................................................................. 55 7.4.20.1 Mode Register Read Timing Example: RL = 3, tMRR = 2 .................................................................................. 56 7.4.20.2 Read to MRR Timing Example: RL = 3, tMRR = 2 ............................................................................................ 57 7.4.20.3 Burst Write Followed by MRR: RL = 3, WL = 1, BL = 4 ..................................................................................... 57 7.4.21 Temperature Sensor.................................................................................................................................................... 58 7.4.21.1 Temperature Sensor Timing ............................................................................................................................. 59 7.4.21.2 DQ Calibration .................................................................................................................................................. 59 7.4.21.3 MR32 and MR40 DQ Calibration Timing Example: RL = 3, tMRR = 2 ............................................................... 60 7.4.22 Mode Register Write Command................................................................................................................................... 61 Publication Release Date: Apr. 10, 2018 Revision: A01-002 - 2 -

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WINBOND ELECTRONICS
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