X-On Electronics has gained recognition as a prominent supplier of W956D6KBKX7I DRAM across the USA, India, Europe, Australia, and various other global locations. W956D6KBKX7I DRAM are a product manufactured by Winbond. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

W956D6KBKX7I Winbond

W956D6KBKX7I electronic component of Winbond
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Part No.W956D6KBKX7I
Manufacturer: Winbond
Category: DRAM
Description: DRAM 64M pSRAM x16 ADM 133MHz Ind temp
Datasheet: W956D6KBKX7I Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.7241 ea
Line Total: USD 2.72 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 2.7241
10 : USD 2.4532
25 : USD 2.3965
40 : USD 2.3688
80 : USD 2.1168
312 : USD 2.0324
452 : USD 2.0084
624 : USD 1.9858
1248 : USD 1.9039
1356 : USD 1.822
2712 : USD 1.7766
4992 : USD 1.6796
5424 : USD 1.6052

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 2.7241
10 : USD 2.4532
25 : USD 2.3965
40 : USD 2.3688
80 : USD 2.1168
312 : USD 2.0324
452 : USD 2.0084
624 : USD 1.9858
1248 : USD 1.9039
1356 : USD 1.822
2712 : USD 1.7766
4992 : USD 1.6796
5424 : USD 1.6052

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 452
Multiples : 452
452 : USD 1.804

   
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We are delighted to provide the W956D6KBKX7I from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the W956D6KBKX7I and other electronic components in the DRAM category and beyond.

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W956D6KBKX 64Mb Async./Burst/Sync./A/D MUX TABLE OF CONTENTS 1. GENERAL DESCRIPTION .......................................................................................................... 3 2. FEATURES.................................................................................................................................. 3 3. ORDERING INFORMATION ....................................................................................................... 3 4. BALL CONFIGURATION ............................................................................................................ 4 5. BALL DESCRIPTION .................................................................................................................. 5 6. BLOCK DIAGRAM ...................................................................................................................... 6 7. INSTRUCTION SET .................................................................................................................... 7 8. FUNCTIONAL DESCRIPTION .................................................................................................... 8 8.1 Power Up Initialization ..................................................................................................................... 8 8.2 Bus Operating Modes ...................................................................................................................... 8 8.3 Asynchronous Modes ...................................................................................................................... 8 8.3.1 READ Operation (ADV LOW) .................................................................................................................. 9 8.3.2 WRITE Operation (ADV LOW) ................................................................................................................ 9 8.4 Burst Mode Operation .................................................................................................................... 10 8.4.1 Burst Mode READ (4-word burst) ............................................................................................................ 10 8.4.2 Burst Mode WRITE (4-word burst) .......................................................................................................... 11 8.4.3 Refresh Collision During Variable-Latency READ Operation .................................................................. 12 8.5 Mixed-Mode Operation .................................................................................................................. 13 8.5.1 WAIT Operation ....................................................................................................................................... 13 8.5.2 Wired-OR WAIT Configuration ................................................................................................................ 13 8.5.3 LB / UB Operation ................................................................................................................................. 14 8.6 Low Power Operation .................................................................................................................... 14 8.6.1 Standby Mode Operation ......................................................................................................................... 14 8.6.2 Temperature Compensated Refresh ....................................................................................................... 14 8.6.3 Partial-Array Refresh ............................................................................................................................... 14 8.6.4 Deep Power-Down Operation .................................................................................................................. 14 8.7 Registers ....................................................................................................................................... 15 8.7.1 Access Using CRE .................................................................................................................................. 15 8.7.2 Configuration Register WRITE Asynchronous Mode Followed by READ Operation .............................. 15 8.7.3 Configuration Register WRITE Synchronous Mode Followed by READ Operation ................................ 16 8.7.4 Configuration Register READ Asynchronous Mode Followed by READ ARRAY Operation .................. 17 8.7.5 Configuration Register READ Synchronous Mode Followed by READ ARRAY Operation .................... 18 8.7.6 Software Access ...................................................................................................................................... 19 8.7.7 Load Configuration Register .................................................................................................................... 19 8.7.8 Read Configuration Register ................................................................................................................... 20 8.8 Bus Configuration Register ............................................................................................................ 20 8.8.1 Bus Configuration Register Definition ...................................................................................................... 21 8.8.2 Burst Length (BCR 2:0 ) Default = Continuous Burst .............................................................................. 22 8.8.3 Burst Wrap (BCR 3 ) Default = No Wrap ................................................................................................. 22 8.8.4 Sequence and Burst Length .................................................................................................................... 23 8.8.5 Drive Strength (BCR 5:4 ) Default = Outputs Use Half-Drive Strength ................................................... 24 8.8.6 Drive Strength .......................................................................................................................................... 24 8.8.7 WAIT Configuration. (BCR 8 ) Default =WAIT Transitions 1 Clock Before Data Valid/ Invalid ............... 24 8.8.8 WAIT Polarity (BCR 10 ) Default = WAIT Active HIGH ........................................................................... 24 8.8.9 WAIT Configuration During Burst Operation ........................................................................................... 25 8.8.10 Latency Counter (BCR 13:11 ) Default = Three Clock Latency ............................................................ 25 8.8.11 Initial Access Latency (BCR 14 ) Default = Variable ............................................................................. 25 8.8.12 Allowed Latency Counter Settings in Variable Latency Mode ............................................................... 25 8.8.13 Latency Counter (Variable Initial Latency, No Refresh Collision) ......................................................... 26 8.8.14 Allowed Latency Counter Settings in Fixed Latency Mode ................................................................... 26 8.8.15 Latency Counter (Fixed Latency) .......................................................................................................... 27 8.8.16 Operating Mode (BCR 15 ) Default is Asynchronous Operation ........................................................... 27 Publication Release Date: Mar. 02, 2017 Revision: A01-001 - 1 - W956D6KBKX 8.9 Refresh Configuration Register ...................................................................................................... 28 8.9.1 Refresh Configuration Register Mapping ................................................................................................ 28 8.9.2 Partial Array Refresh (RCR 2:0 ) Default = Full Array Refresh ............................................................... 28 8.9.3 Address Patterns for PAR (RCR 4 = 1) ................................................................................................. 29 8.9.4 Deep Power-Down (RCR 4 ) Default = DPD Disabled ............................................................................ 29 8.10 Device Identification Register ....................................................................................................... 29 9. ELECTRICAL CHARACTERISTIC ........................................................................................... 30 9.1 Absolute Maximum DC, AC Ratings .............................................................................................. 30 9.2 Electrical Characteristics and Operating Conditions ....................................................................... 30 9.3 Deep Power-Down Specifications .................................................................................................. 31 9.4 Partial Array Self Refresh Standby Current .................................................................................... 31 9.5 Capacitance ................................................................................................................................... 31 9.6 AC Input-Output Reference Waveform ........................................................................................... 31 9.7 AC Output Load Circuit .................................................................................................................. 31 10. TIMING REQUIREMENTS....................................................................................................... 32 10.1 Read, Write Timing Requirements ............................................................................................... 32 10.1.1 Asynchronous READ Cycle Timing Requirements ............................................................................... 32 10.1.2 Burst READ Cycle Timing Requirements .............................................................................................. 33 10.1.3 Asynchronous WRITE Cycle Timing Requirements .............................................................................. 34 10.1.4 Burst WRITE Cycle Timing Requirements ............................................................................................ 35 10.2 TIMING DIAGRAMS .................................................................................................................... 36 10.2.1 Initialization Period ................................................................................................................................. 36 10.2.2 DPD Entry and Exit Timing Parameters ................................................................................................ 36 10.2.3 Initialization Timing Parameters ............................................................................................................ 36 10.2.4 Initialization and DPD Timing Parameters ............................................................................................. 36 10.2.5 Asynchronous READ ............................................................................................................................. 37 10.2.6 Single Access Burst READ Operation - Variable Latency..................................................................... 38 10.2.7 Four Word Burst READ Operation-Variable Latency ............................................................................ 39 10.2.8 Single-Access Burst READ Operation-Fixed Latency ........................................................................... 40 10.2.9 Four Word Burst READ Operation-Fixed Latency ................................................................................. 41 10.2.10 Burst READ Terminate at End-of-Row (Wrap Off) .............................................................................. 42 10.2.11 Burst READ Row Boundary Crossing ................................................................................................. 43 10.2.12 Asynchronous WRITE ......................................................................................................................... 44 10.2.13 Burst WRITE Operation-Variable Latency Mode ................................................................................. 45 10.2.14 Burst WRITE Operation-Fixed Latency Mode ..................................................................................... 46 10.2.15 Burst WRITE Terminate at End of Row (Wrap Off) ............................................................................. 47 10.2.16 Burst WRITE Row Boundary Crossing ................................................................................................ 48 10.2.17 Burst WRITE Followed by Burst READ ............................................................................................... 49 10.2.18 Asynchronous WRITE Followed by Burst READ ................................................................................ 50 10.2.19 Burst READ Followed by Asynchronous WRITE ................................................................................ 51 10.2.20 Asynchronous WRITE Followed by Asynchronous READ .................................................................. 52 11. PACKAGE SPECIFICATION .................................................................................................. 53 12. REVISION HISTORY ............................................................................................................... 54 Publication Release Date: Mar. 02, 2017 Revision: A01-001 - 2 -

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
WINBOND ELECTRONICS
WINBOND ELECTRONICS CORP AMERICA
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