X-On Electronics has gained recognition as a prominent supplier of MT41K256M16LY-107:N DRAM across the USA, India, Europe, Australia, and various other global locations. MT41K256M16LY-107:N DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT41K256M16LY-107:N Micron

MT41K256M16LY-107:N electronic component of Micron
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Part No.MT41K256M16LY-107:N
Manufacturer: Micron
Category: DRAM
Description: DRAM Chip DDR3 SDRAM 4Gbit 256Mx16 1.35V
Datasheet: MT41K256M16LY-107:N Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
7: USD 8.7875 ea
Line Total: USD 61.51 
Availability - 0
MOQ: 7  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 20 Nov to Tue. 26 Nov

Multiples : 1

0
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 7
Multiples : 1
7 : USD 8.7875
10 : USD 7.7049
25 : USD 6.9992
50 : USD 6.9391
100 : USD 6.605

   
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We are delighted to provide the MT41K256M16LY-107:N from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT41K256M16LY-107:N and other electronic components in the DRAM category and beyond.

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4Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM MT41K1G4 128 Meg x 4 x 8 banks MT41K512M8 64 Meg x 8 x 8 banks MT41K256M16 32 Meg x 16 x 8 banks Self refresh temperature (SRT) Description Automatic self refresh (ASR) DDR3L SDRAM (1.35V) is a low voltage version of the Write leveling DDR3 (1.5V) SDRAM. Refer to DDR3 (1.5V) SDRAM Multipurpose register (Die Rev :E) data sheet specifications when running in Output driver calibration 1.5V compatible mode. Options Marking Features Configuration V = V = 1.35V (1.2831.45V) DD DDQ 1 Gig x 4 1G4 Backward compatible to V = V = 1.5V 0.075V DD DDQ 512 Meg x 8 512M8 Supports DDR3L devices to be backward com- 256 Meg x 16 256M16 patible in 1.5V applications FBGA package (Pb-free) x4, x8 Differential bidirectional data strobe 78-ball (9mm x 10.5mm) Rev. E RH 8n-bit prefetch architecture 78-ball (7.5mm x 10.6mm) Rev. N RG Differential clock inputs (CK, CK#) 78-ball (8mm x 10.5mm) Rev. P DA 8 internal banks FBGA package (Pb-free) x16 Nominal and dynamic on-die termination (ODT) 96-ball (9mm x 14mm) Rev. E HA for data, strobe, and mask signals 96-ball (7.5mm x 13.5mm) Rev. N LY Programmable CAS (READ) latency (CL) 96-ball (8mm x 14mm) Rev. P TW Programmable posted CAS additive latency (AL) Timing cycle time Programmable CAS (WRITE) latency (CWL) 938ps @ CL = 14 (DDR3-2133) -093 Fixed burst length (BL) of 8 and burst chop (BC) of 4 1.07ns @ CL = 13 (DDR3-1866) -107 (via the mode register set [MRS]) 1.25ns @ CL = 11 (DDR3-1600) -125 Selectable BC4 or BL8 on-the-fly (OTF) Operating temperature Self refresh mode Commercial (0C T +95C) None C T of 105C C Industrial (40C T +95C) IT C 64ms, 8192-cycle refresh up to 85C Automotive (40C T +105C) AT C 32ms, 8192-cycle refresh at >85C to 95C Revision :E/:N/:P 16ms, 8192-cycle refresh at >95C to 105C Table 1: Key Timing Parameters t t t t Speed Grade Data Rate (MT/s) Target RCD- RP-CL RCD (ns) RP (ns) CL (ns) 1, 2 -093 2133 14-14-14 13.09 13.09 13.09 1 -107 1866 13-13-13 13.91 13.91 13.91 -125 1600 11-11-11 13.75 13.75 13.75 1. Backward compatible to 1600, CL = 11 (-125). Notes: 2. Backward compatible to 1866, CL = 13 (-107). 09005aef85af8fa8 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 4Gb_DDR3L.pdf - Rev. Q 12/17 EN 2017 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.4Gb: x4, x8, x16 DDR3L SDRAM Description Table 2: Addressing Parameter 1 Gig x 4 512 Meg x 8 256 Meg x 16 Configuration 128 Meg x 4 x 8 banks 64 Meg x 8 x 8 banks 32 Meg x 16 x 8 banks Refresh count 8K 8K 8K Row address 64K (A[15:0]) 64K (A[15:0]) 32K (A[14:0]) Bank address 8 (BA[2:0]) 8 (BA[2:0]) 8 (BA[2:0]) Column address 2K (A[11, 9:0]) 1K (A[9:0]) 1K (A[9:0]) Page size 1KB 1KB 2KB Figure 1: DDR3L Part Numbers   ^ (13 *LJ[ * H 7 0HJ[ ,QGXVWULDOWHPSHUDWXUH ,7  Y 5H 0DUN $XWRPRWLYHWHPSHUDWXUH 7 $ EDOOPP[PP)%*$ ( EDOOPP[PP)%*$ 1 6SHHG*UDGH W EDOOPP[PP)%*$ 3 &. QV&/  ( EDOOPP[PP)%*$ W EDOOPP[PP)%*$ 1 W  &. QV&/  EDOOPP[PP)%*$ 3 7: 1. Not all options listed can be combined to define an offered product. Use the part catalog search on Note:

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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