X-On Electronics has gained recognition as a prominent supplier of MT41K64M16TW-107:J TR DRAM across the USA, India, Europe, Australia, and various other global locations. MT41K64M16TW-107:J TR DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT41K64M16TW-107:J TR Micron

MT41K64M16TW-107:J TR electronic component of Micron
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Part No.MT41K64M16TW-107:J TR
Manufacturer: Micron
Category: DRAM
Description: DRAM Chip DDR3L SDRAM 1G-Bit 64Mx16 1.35V 96-Pin F-BGA T/R
Datasheet: MT41K64M16TW-107:J TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.9847 ea
Line Total: USD 3.98 
Availability - 3160
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1940
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2000
Multiples : 2000
2000 : USD 5.9582

482
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 6.2735
10 : USD 6.2094
25 : USD 6.1452
100 : USD 6.0825
250 : USD 6.0183

3160
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 3.9847
10 : USD 3.3495
100 : USD 3.234
250 : USD 3.1069
500 : USD 3.003
1000 : USD 2.9453
2000 : USD 2.8298

3880
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2000
Multiples : 2000
2000 : USD 4.9331

482
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3
Multiples : 1
3 : USD 6.2735
10 : USD 6.2094
25 : USD 6.1452
100 : USD 6.0825
250 : USD 6.0183

1940
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2000
Multiples : 2000
2000 : USD 5.9582

   
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We are delighted to provide the MT41K64M16TW-107:J TR from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT41K64M16TW-107:J TR and other electronic components in the DRAM category and beyond.

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1Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM MT41K256M4 32 Meg x 4 x 8 banks MT41K128M8 16 Meg x 8 x 8 banks MT41K64M16 8 Meg x 16 x 8 banks Write leveling Description Multipurpose register The 1.35V DDR3L SDRAM device is a low-voltage ver- Output driver calibration sion of the 1.5V DDR3 SDRAM device. Refer to the DDR3 (1.5V) SDRAM data sheet specifications when 1 Options Marking running in 1.5V compatible mode. Configuration 256 Meg x 4 256M4 Features 128 Meg x 8 128M8 V = V = +1.35V (1.283V to 1.45V) DD DDQ 64 Meg x 16 64M16 Backward compatible to V = V = 1.5V 0.075V DD DDQ FBGA package (Pb-free) x4, x8 Differential bidirectional data strobe 78-ball FBGA (8mm x 11.5mm) Rev. JP 8n-bit prefetch architecture G Differential clock inputs (CK, CK ) 78-ball FBGA (8mm x 10.5mm) Rev. J DA 8 internal banks FBGA package (Pb-free) x16 Nominal and dynamic on-die termination (ODT) 96-ball FBGA (8mm x 14mm) Rev. G JT for data, strobe, and mask signals 96-ball FBGA (8mm x 14mm) Rev. J TW Programmable CAS (READ) latency (CL) Timing cycle time Programmable CAS additive latency (AL) 1.07ns CL = 13 (DDR3-1866) -107 Programmable CAS (WRITE) latency (CWL) 1.25ns CL = 11 (DDR3-1600) -125 Fixed burst length (BL) of 8 and burst chop (BC) of 4 1.5ns CL = 9 (DDR3-1333) -15E (via the mode register set MRS ) 1.87ns CL = 7 (DDR3-1066) -187E Selectable BC4 or BL8 on-the-fly (OTF) Operating temperature Self refresh mode Commercial (0C T +95C) None C T of 95C C Industrial (40C T +95C) IT C 64ms, 8192-cycle refresh up to 85C Revision :G / :J 32ms, 8192-cycle refresh at >85C to 95C Self refresh temperature (SRT) 1. Not all options listed can be combined to Note: Automatic self refresh (ASR) define an offered product. Use the part catalog search on 1Gb: x4, x8, x16 DDR3L SDRAM Description Table 2: Addressing Parameter 256 Meg x 4 128 Meg x 8 64 Meg x 16 Configuration 32 Meg x 4 x 8 banks 16 Meg x 8 x 8 banks 8 Meg x 16 x 8 banks Refresh count 8K 8K 8K Row address 16K A 13:0 16K A 13:0 8K A 12:0 Bank address 8 BA 2:0 8 BA 2:0 8 BA 2:0 Column address 2K A 11, 9:0 1K A 9:0 1K A 9:0 Page Size 1KB 1KB 2KB Figure 1: DDR3 Part Numbers Example Part Number: MT41K256M4DA-125:J - : MT41K Configuration Package Speed Revision :G / :J Revision Temperature Configuration Commercial 256 Meg x 4 256M4 None Industrial temperature 128 Meg x 8 128M8 IT 64 Meg x 16 64M16 Package Rev. Mark Speed Grade t 78-ball 8mm x 11.5mm FBGA G JP -107 CK = 1.07ns, CL = 13 t 96-ball 8mm x 14mm FBGA -125 G JT CK = 1.25ns, CL = 11 78-ball 8mm x 10.5mm FBGA -15E t J DA CK = 1.5ns, CL = 9 t 96-ball 8mm x 14mm FBGA -187E J TW CK = 1.87ns, CL = 7 Note: 1. Not all options listed can be combined to define an offered product. Use the part catalog search on

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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