X-On Electronics has gained recognition as a prominent supplier of MT46V16M16CY-5B AAT:M TR DRAM across the USA, India, Europe, Australia, and various other global locations. MT46V16M16CY-5B AAT:M TR DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT46V16M16CY-5B AAT:M TR Micron

MT46V16M16CY-5B AAT:M TR electronic component of Micron
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Part No.MT46V16M16CY-5B AAT:M TR
Manufacturer: Micron
Category: DRAM
Description: DRAM DDR 256M 16MX16 FBGA
Datasheet: MT46V16M16CY-5B AAT:M TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 10.6503
10 : USD 9.6079
25 : USD 9.4002
50 : USD 9.0033
100 : USD 8.1806
250 : USD 7.9338
500 : USD 7.6752
1000 : USD 7.3931
2000 : USD 7.2286
N/A

Obsolete
   
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We are delighted to provide the MT46V16M16CY-5B AAT:M TR from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT46V16M16CY-5B AAT:M TR and other electronic components in the DRAM category and beyond.

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256Mb: x8, x16 Automotive DDR SDRAM Features Automotive DDR SDRAM MT46V32M8 8 Meg x 8 x 4 banks MT46V16M16 4 Meg x 16 x 4 banks Features Options Marking V = 2.5V 0.2V, V = 2.5V 0.2V Configuration DD DDQ 1 V = 2.6V 0.1V, V = 2.6V 0.1V (DDR400) 32 Meg x 8 (8 Meg x 8 x 4 banks) 32M8 DD DDQ Bidirectional data strobe (DQS) transmitted/ 16 Meg x 16 (4 Meg x 16 x 4 banks) 16M16 received with data, that is, source-synchronous data Plastic package OCPL capture (x16 has two one per byte) 66-pin TSOP TG Internal, pipelined double-data-rate (DDR) 66-pin TSOP (Pb-free) P architecture two data accesses per clock cycle Plastic package Differential clock inputs (CK and CK ) 60-ball FBGA (8mm x 12.5mm) CV Commands entered on each positive CK edge 60-ball FBGA (8mm x 12.5mm) CY DQS edge-aligned with data for READs center- (Pb-free) aligned with data for WRITEs Timing cycle time DLL to align DQ and DQS transitions with CK 5ns CL = 3 (DDR400) -5B Four internal banks for concurrent operation Self refresh Data mask (DM) for masking write data Standard None (x16 has two one per byte) Low-power self refresh L Programmable burst lengths (BL): 2, 4, or 8 Temperature rating Auto refresh Industrial (40 C to +85 C) AIT 64ms, 8192-cycle(AIT) Automotive (40 C to +105 C) AAT 16ms, 8192-cycle (AAT) Revision Self refresh (not available on AAT devices) x8, x16 :M Longer-lead TSOP for improved reliability (OCPL) 2.5V I/O (SSTL 2-compatible) Notes: 1. DDR400 devices operating at < DDR333 con- Concurrent auto precharge option supported ditions can use V /V = 2.5V +0.2V. DD DDQ t t t RAS lockout supported ( RAP = RCD) 2. Not all options listed can be combined to AEC-Q100 define an offered product. Use the Part Cata- PPAP submission log Search on www.micron.com for product 8D response time offerings and availability. PDF:09005aef848ea6ef/Source: 09005aef845d3b9c Micron Technology, Inc., reserves the right to change products or specifications without notice. 256mb x8x16 at ddr t66a d1.fm - Rev. A Core DDR Rev. C 7/18EN 1 2011 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 256Mb: x8, x16 Automotive DDR SDRAM Features Table 1: Key Timing Parameters CL = CAS (READ) latency MIN clock rate with 50% duty cycle at CL = 2 (-75E, -75Z), CL = 2.5 (-6, -6T, -75), and CL = 3 (-5B) Clock Rate (MHz) Access DQSDQ Speed Grade CL = 2 CL = 2.5 CL = 3 Data-Out Window Window Skew -5B 133 167 200 1.6ns 0.70ns +0.40ns -6 133 167 n/a 2.1ns 0.70ns +0.40ns 6T 133 167 n/a 2.0ns 0.70ns +0.45ns -75E/-75Z 133 133 n/a 2.5ns 0.75ns +0.50ns -75 100 133 n/a 2.5ns 0.75ns +0.50ns Table 2: Addressing Parameter 32 Meg x 8 16 Meg x 16 Configuration 8 Meg x 8 x 4 banks 4 Meg x 16 x 4 banks Refresh count 8K 8K Row address 8K (A 12:0 ) 8K (A 12:0 ) Bank address 4 (BA 1:0 ) 4 (BA 1:0 ) Column address 1K (A 9:0 ) 512 (A 8:0 ) Table 3: Speed Grade Compatibility Marking PC3200 (3-3-3) PC2700 (2.5-3-3) PC2100 (2-2-2) PC2100 (2-3-3) PC2100 (2.5-3-3) PC1600(2-2-2) 1 Yes Yes Yes Yes Yes Yes -5B Yes Yes Yes Yes Yes -6 Yes Yes Yes Yes Yes -6T Yes Yes Yes Yes -75E Yes Yes Yes -75Z Yes Yes -75 -5B -6/-6T -75E -75Z -75 -75 Notes: 1. The -5B device is backward compatible with all slower speed grades. The voltage range of -5B device operating at slower speed grades is V = V = 2.5V 0.2V. DD DDQ PDF:09005aef848ea6ef/Source: 09005aef845d3b9c Micron Technology, Inc., reserves the right to change products or specifications without notice. 256mb x8x16 at ddr t66a d1.fm - Rev. A Core DDR Rev. B 11/11 EN 2 2011 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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