X-On Electronics has gained recognition as a prominent supplier of MT46V32M16P-5B IT DRAM across the USA, India, Europe, Australia, and various other global locations. MT46V32M16P-5B IT DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT46V32M16P-5B IT Micron

MT46V32M16P-5B IT electronic component of Micron
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Part No.MT46V32M16P-5B IT
Manufacturer: Micron
Category: DRAM
Description: SDRAM, DDR, 512MBIT, 66TSOP
Datasheet: MT46V32M16P-5B IT Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 9.8195 ea
Line Total: USD 9.82 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 9.8195
10 : USD 9.3775

   
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We are delighted to provide the MT46V32M16P-5B IT from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT46V32M16P-5B IT and other electronic components in the DRAM category and beyond.

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512Mb: x4, x8, x16 DDR SDRAM Features Double Data Rate (DDR) SDRAM MT46V128M4 32 Meg x 4 x 4 banks MT46V64M8 16 Meg x 8 x 4 banks MT46V32M16 8 Meg x 16 x 4 banks Features Options Marking V = 2.5V 0.2V, V = 2.5V 0.2V Configuration DD DDQ 1 V = 2.6V 0.1V, V = 2.6V 0.1V (DDR400) 128 Meg x 4 (32 Meg x 4 x 4 banks) 128M4 DD DDQ Bidirectional data strobe (DQS) transmitted/ 64 Meg x 8 (16 Meg x 8 x 4 banks) 64M8 32 Meg x 16 (8 Meg x 16 x 4 banks) 32M16 received with data, i.e., source-synchronous data Plastic package capture (x16 has two one per byte) 66-pin TSOP TG Internal, pipelined double-data-rate (DDR) 66-pin TSOP (Pb-free) P architecture two data accesses per clock cycle 2 60-ball FBGA (10mm x 12.5mm) FN Differential clock inputs (CK and CK ) 2 60-ball FBGA (10mm x 12.5mm) (Pb-free) BN Commands entered on each positive CK edge 3 60-ball FBGA (8mm x 12.5mm) CV DQS edge-aligned with data for READs center- 3 60-ball FBGA (8mm x 12.5mm) (Pb-free) CY aligned with data for WRITEs Timing cycle time DLL to align DQ and DQS transitions with CK 5ns CL = 3 (DDR400) -5B 2 Four internal banks for concurrent operation 6ns CL = 2.5 (DDR333) (FBGA only) -6 2 Data mask (DM) for masking write data 6ns CL = 2.5 (DDR333) (TSOP only) -6T Self refresh (x16 has two one per byte) Standard None Programmable burst lengths: 2, 4, or 8 Low-power self refresh L Auto refresh Temperature rating 64ms, 8192-cycle Commercial (0C to +70C) None Longer-lead TSOP for improved reliability (OCPL) Industrial (40C to +85C) IT 2.5V I/O (SSTL 2 compatible) Revision Concurrent auto precharge option is supported x4, x8, x16 :F t t t RAS lockout supported ( RAP = RCD) x4, x8, x16 :J Notes: 1. DDR400 devices operating at < DDR333 conditions can use V /V = 2.5V +0.2V. DD DDQ 2. Available only on Revision F. 3. Available only on Revision J. Table 1: Key Timing Parameters CL = CAS (READ) latency data-out window is MIN clock rate with 50% duty cycle at CL = 2, CL = 2.5, or CL = 3 Clock Rate (MHz) Speed Data-Out Access DQSDQ Grade CL = 2 CL = 2.5 CL = 3 Window Window Skew -5B 133 167 200 1.6ns 0.70ns 0.40ns -6 133 167 n/a 2.1ns 0.70ns 0.40ns 6T 133 167 n/a 2.0ns 0.70ns 0.45ns -75E/-75Z 133 133 n/a 2.5ns 0.75ns 0.50ns -75 100 133 n/a 2.5ns 0.75ns 0.50ns PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a Micron Technology, Inc., reserves the right to change products or specifications without notice. 512Mb DDR x4x8x16 D1.fm - 512Mb DDR: Rev. Q Core DDR Rev. E 7/11 EN 1 2000 Micron Technology, Inc. All rights reserved. 512Mb: x4, x8, x16 DDR SDRAM Features Table 2: Addressing Parameter 128 Meg x 4 64 Meg x 8 32 Meg x 16 Configuration 32 Meg x 4 x 4 banks 16 Meg x 8 x 4 banks 8 Meg x 16 x 4 banks Refresh count 8K 8K 8K Row address 8K (A0A12) 8K (A0A12) 8K (A0A12) Bank address 4 (BA0, BA1) 4 (BA0, BA1) 4 (BA0, BA1) Column address 4K (A0A9, A11, A12) 2K (A0-A9, A11) 1K (A0A9) Table 3: Speed Grade Compatibility Marking PC3200 (3-3-3) PC2700 (2.5-3-3) PC2100 (2-2-2) PC2100 (2-3-3) PC2100 (2.5-3-3) PC1600 (2-2-2) 1 Yes Yes Yes Yes Yes Yes -5B Yes Yes Yes Yes Yes -6 Yes Yes Yes Yes Yes -6T Yes Yes Yes Yes -75E Yes Yes Yes -75Z Yes Yes -75 -5B -6/-6T -75E -75Z -75 -75 Notes: 1. The -5B device is backward compatible with all slower speed grades. The voltage range of -5B device operating at slower speed grades is V = V = 2.5V 0.2V. DD DDQ Figure 1: 512Mb DDR SDRAM Part Numbers Example Part Number: MT46V32M16P-6T:F - : Sp. MT46V Configuration Package Speed Temp. Revision Op. Revision :F x4, x8, x16 :J x4, x8, x16 Configuration 128 Meg x 4 128M4 Operating Temp 64 Meg x 8 64M8 Commercial 32 Meg x 16 32M16 IT Industrial Package Special Options 400-mil TSOP TG Standard 400-mil TSOP (Pb-free) P L Low power 10mm x 12.5mm FBGA FN Speed Grade BN 10mm x 12.5mm FBGA (Pb-free) t -5B CK = 5ns, CL = 3 8mm x 12.5mm FBGA CV t 8mm x 12.5mm FBGA (Pb-free) CY -6 CK = 6ns, CL = 2.5 t -6T CK = 6ns, CL = 2.5 FBGA Part Number System Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the part number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Microns Web site: www.micron.com. PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a Micron Technology, Inc., reserves the right to change products or specifications without notice. 512Mb DDR x4x8x16 D1.fm - 512Mb DDR: Rev. Q Core DDR Rev. E 7/11 EN 2 2000 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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