512Mb: x4, x8, x16 DDR2 SDRAM
Features
DDR2 SDRAM
MT47H128M4 32 Meg x 4 x 4 banks
MT47H64M8 16 Meg x 8 x 4 banks
MT47H32M16 8 Meg x 16 x 4 banks
1
Options Marking
Features
Configuration
V = 1.8V 0.1V, V = 1.8V 0.1V
DD DDQ
128 Meg x 4 (32 Meg x 4 x 4 banks) 128M4
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
64 Meg x 8 (16 Meg x 8 x 4 banks) 64M8
Differential data strobe (DQS, DQS#) option 32 Meg x 16 (8 Meg x 16 x 4 banks) 32M16
FBGA package (Pb-free) x16
4n-bit prefetch architecture
84-ball FBGA (8mm x 12.5mm) Rev. G HR
Duplicate output strobe (RDQS) option for x8
84-ball FBGA (8mm x 12.5mm) Rev. H NF
DLL to align DQ and DQS transitions with CK
FBGA package (Pb-free) x4, x8
4 internal banks for concurrent operation
60-ball FBGA (8mm x 10mm) Rev. G CF
Programmable CAS latency (CL)
60-ball FBGA (8mm x 10mm) Rev. H SH
Posted CAS additive latency (AL) FBGA package (lead solder) x16
t
84-ball FBGA (8mm x 12.5mm) Rev. G HW
WRITE latency = READ latency - 1 CK
FBGA package (lead solder) x4, x8
Selectable burst lengths: 4 or 8
60-ball FBGA (8mm x 10mm) Rev. G JN
Adjustable data-output drive strength
Timing cycle time
64ms, 8192-cycle refresh
1.875ns @ CL = 7 (DDR2-1066) -187E
On-die termination (ODT)
2.5ns @ CL = 5 (DDR2-800) -25E
Industrial temperature (IT) option 3.0ns @ CL = 5 (DDR2-667) -3
Self refresh
RoHS-compliant
Standard None
Supports JEDEC clock jitter specification
Low-power L
Operating temperature
2
Commercial (0C T +85C) None
C
Industrial (40C T +95C; IT
C
40C T +85C)
A
Revision :G/:H
1. Not all options listed can be combined to
Notes:
define an offered product. Use the Part
Catalog Search on www.micron.com for
product offerings and availability.
2. For extended CT operating temperature,
see Table 11 (page 29), Note 7.
Table 1: Key Timing Parameters
Data Rate (MT/s)
t
Speed Grade CL = 3 CL = 4 CL = 5 CL = 6 CL = 7 RC (ns)
-187E 400 533 800 800 1066 54
-25E 400 533 800 800 n/a 55
-3 400 533 667 n/a n/a 55
PDF: 09005aef85651470 Micron Technology, Inc. reserves the right to change products or specifications without notice.
1
512MbDDR2.pdf - Rev. Y 06/17 EN 2004 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.512Mb: x4, x8, x16 DDR2 SDRAM
Features
Table 2: Addressing
Parameter 128 Meg x 4 64 Meg x 8 32 Meg x 16
Configuration 32 Meg x 4 x 4 banks 16 Meg x 8 x 4 banks 8 Meg x 16 x 4 banks
Refresh count 8K 8K 8K
Row address A[13:0] (16K) A[13:0] (16K) A[12:0] (8K)
Bank address BA[1:0] (4) BA[1:0] (4) BA[1:0] (4)
Column address A[11, 9:0] (2K) A[9:0] (1K) A[9:0] (1K)
Figure 1: 512Mb DDR2 Part Numbers
Example Part Number: MT47H128M4SH-25E:H
- :
MT47H Configuration Package Speed Revision
^
:G/:H Revision
Configuration
128 Meg x 4 128M4
64 Meg x 8 64M8
L Low power
32 Meg x 16 32M16
IT Industrial temperature
Package
Pb-free
Speed Grade
t
84-ball 8mm x 12.5mm FBGA HR
CK = 3ns, CL = 5
-3
60-ball 8mm x 10.0mm FBGA CF t
CK = 2.5ns, CL = 5
-25E
NF
84-ball 8mm x 12.5mm FBGA t
-187E CK = 1.875ns, CL = 7
60-ball 8mm x 10.0mm FBGA SH
Lead solder
84-ball 8mm x 12.5mm FBGA HW
60-ball 8mm x 10mm FBGA JN
1. Not all speeds and configurations are available in all packages.
Note:
FBGA Part Number System
Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the
part number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Microns Web site: