X-On Electronics has gained recognition as a prominent supplier of MT48LC8M16A2P-75 IT:G TR DRAM across the USA, India, Europe, Australia, and various other global locations. MT48LC8M16A2P-75 IT:G TR DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT48LC8M16A2P-75 IT:G TR Micron

MT48LC8M16A2P-75 IT:G TR electronic component of Micron
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See Product Specifications
Part No.MT48LC8M16A2P-75 IT:G TR
Manufacturer: Micron
Category: DRAM
Description: DRAM Chip SDRAM 128Mbit 8Mx16 3.3V 54-Pin TSOP-II T/R
Datasheet: MT48LC8M16A2P-75 IT:G TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 9.8572 ea
Line Total: USD 9857.2 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 14.9631

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 9.8572
3000 : USD 8.2238
5000 : USD 5.6468
10000 : USD 4.9286
25000 : USD 4.8723

   
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We are delighted to provide the MT48LC8M16A2P-75 IT:G TR from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT48LC8M16A2P-75 IT:G TR and other electronic components in the DRAM category and beyond.

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128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 8 Meg x 4 x 4 Banks MT48LC16M8A2 4 Meg x 8 x 4 Banks MT48LC8M16A2 2 Meg x 16 x 4 Banks Options Marking Features Configurations PC100- and PC133-compliant 32 Meg x 4 (8 Meg x 4 x 4 banks) 32M4 Fully synchronous all signals registered on positive 16 Meg x 8 (4 Meg x 8 x 4 banks) 16M8 edge of system clock 8 Meg x 16 (2 Meg x 16 x 4 banks) 8M16 Internal, pipelined operation column address can t Write recovery ( WR) be changed every clock cycle t WR = 2 CLK A2 Internal banks for hiding row access/precharge 1 Plastic package OCPL Programmable burst lengths (BL): 1, 2, 4, 8, or full 54-pin TSOP II (400 mil) TG page 54-pin TSOP II OCPL (400 mil) Pb- P Auto precharge, includes concurrent auto precharge free and auto refresh modes 2 60-ball FBGA (8mm x 16mm) FB Self refresh mode standard and low power 2 60-ball FBGA (8mm x 16mm) Pb-free BB 64ms, 4096-cycle (commercial and industrial) 3 54-ball VFBGA (8mm x 8mm) F4 16ms, 4096-cycle refresh (automotive) 3 54-ball VFBGA (8mm x 8mm) Pb-free B4 LVTTL-compatible inputs and outputs Timing cycle time Single 3.3V 0.3V power supply 7.5ns CL = 3 (PC133) -75 7.5ns CL = 2 (PC133) -7E 6.0ns CL = 3 (x16 only) -6A Self refresh Standard None Low power L Revision :G/:L Operating temperature range Commercial (0C to +70C) None 2 Industrial (40C to +85C) IT 2 Automotive (40C to +105C) AT 1. Off-center parting line. Notes: 2. Contact Micron for availability. 3. x16 only. Table 1: Key Timing Parameters CL = CAS (READ) latency Clock t t t t Speed Grade Frequency (MHz) Target RCD- RP-CL RCD (ns) RP (ns) CL (ns) -6A 167 3-3-3 18 18 18 -75 133 3-3-3 20 20 20 -7E 133 2-2-2 15 15 15 PDF: 09005aef8091e66d Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 128Mb sdr.pdf - Rev. Q 1/12 EN 1999 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.128Mb: x4, x8, x16 SDRAM Features Table 2: Address Table Parameter 32 Meg x 4 16 Meg x 8 8 Meg x 16 Configuration 8 Meg x 4 x 4 banks 4 Meg x 8 x 4 banks 2 Meg x 16 x 4 banks Refresh count 4K 4K 4K Row addressing 4K A 11:0 4K A 11:0 4K A 11:0 Bank addressing 4 BA 1:0 4 BA 1:0 4 BA 1:0 Column 2K A 9:0 , A11 1K A 9:0 512 A 8:0 addressing Table 3: 128Mb SDR Part Numbering Part Numbers Architecture MT48LC32M4A2TG 32 Meg x 4 MT48LC32M4A2P 32 Meg x 4 MT48LC16M8A2TG 16 Meg x 8 MT48LC16M8A2P 16 Meg x 8 MT48LC16M8A2FB 16 Meg x 8 MT48LC16M8A2BB 16 Meg x 8 MT48LC8M16A2TG 8 Meg x 16 MT48LC8M16A2P 8 Meg x 16 MT48LC8M16A2B4 8 Meg x 16 MT48LC8M16A2F4 16 Meg x 16 Note: 1. FBGA Device Decoder: www.micron.com/decoder PDF: 09005aef8091e66d Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 128Mb sdr.pdf - Rev. Q 1/12 EN 1999 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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