128GB (x72, ECC, 3DS 4H Stack, 2 Package Ranks x 4 Logic
Ranks) 288-Pin DDR4 LRDIMM
Features
DDR4 3DS SDRAM LRDIMM
MTA144ASQ16G72LSZ 128GB
Figure 1: 288-Pin LRDIMM (MO-309, R/C-B1)
Features
Module height: 31.25mm (1.23in)
DDR4 functionality and operations supported as
defined in the component data sheet
288-pin, command/address/control registered, data
buffered, load-reduced dual in-line memory module
(LRDIMM)
Fast data transfer rates: PC4-3200, PC4-2933, or
PC4-2666
Options Marking
128GB (16 Gig x 72) Operating temperature
Commercial (0C T 95C) None
V = 1.20V (NOM) OPER
DD
Package
V = 2.5V (NOM)
PP
288-pin DIMM (halogen-free) Z
V = 2.5V (NOM)
DDSPD
Frequency/CAS latency
Supports ECC error detection and correction
0.62ns @ CL = 26 (DDR4-3200) -3S2
Nominal and dynamic on-die termination (ODT) for
0.682ns @ CL = 24 (DDR4-2933) -2S9
data, strobe, and mask signals
0.75ns @ CL = 22 (DDR4-2666) -2S6
Low-power auto self refresh (LPASR)
On-die internal, adjustable, V generation
REFDQ
2 package ranks x 4 logic ranks
2
On-board I C temperature sensor with integrated
serial presence-detect (SPD) EEPROM
32Gb, 3DS 4-high die stack x4 package, Master/Slave
control logic. Each die with 16 internal banks;
4 groups of 4 banks each
Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
Selectable BC4 or BL8 on-the-fly (OTF)
Gold edge contacts
Halogen-free
Fly-by topology
Multiplexed command and address bus
Terminated control, command and address bus
Table 1: Key Timing Parameters
Data Rate (MT/s)
CL =
t t t
Speed 28 RCD RP RC
Grade PC4- 26 25 24 24 22 22 20 20 18 16 14 (ns) (ns) (ns)
-3S2 3200 3200 2666 2666 2400 2400 2133 2133 1866 1600 13.75 13.75 45.75
-2S9 2933 2933 2933 2666 2666 2400 2400 2133 2133 1866 1600 14.32 14.32 46.32
CMTD-341111752-10426 Micron Technology, Inc. reserves the right to change products or specifications without notice.
1
asq144c16gx72lsz.pdf - Rev. C 3/18 EN 2016 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.128GB (x72, ECC, 3DS 4H Stack, 2 Package Ranks x 4 Logic
Ranks) 288-Pin DDR4 LRDIMM
Features
Table 1: Key Timing Parameters (Continued)
Data Rate (MT/s)
CL =
t t t
Speed 28 RCD RP RC
Grade PC4- 26 25 24 24 22 22 20 20 18 16 14 (ns) (ns) (ns)
-2S6 2666 2666 2666 2400 2400 2133 2133 1866 1600 14.25 14.25 46.25
-2S3 2400 2400 2133 1866 1600 15 15 47
Table 2: Addressing
Parameter 128GB
Row address 128K A[16:0]
Column address 1K A[9:0]
Device bank group address 4 BG[1:0]
Device bank address per group 4 BA[1:0]
Device configuration 32Gb (128 Meg x 4 x 16 banks x4 ranks)
Logic rank address 2 C[1:0]
Package rank address 2 CS_n[1:0]
Table 3: Part Numbers and Timing Parameters 128GB Modules
1
Base device: MT40A8G4, 32Gb DDR4 4H 3DS M/S DRAM
Module Module Memory Clock/ Clock Cycles
2 t t
Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP)
MTA144ASQ16G72LSZ-3S2__ 128GB 16 Gig x 72 25.6 GB/s 0.62ns/3200 MT/s 26-22-22
MTA144ASQ16G72LSZ-2S9__ 128GB 16 Gig x 72 23.47 GB/s 0.682ns/2933 MT/s 24-21-21
MTA144ASQ16G72LSZ-2S6__ 128GB 16 Gig x 72 21.3 GB/s 0.75ns/2666 MT/s 22-19-19
Notes: 1. The data sheet for the base device can be found at micron.com.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions.
Consult factory for current revision codes. Example: MTA144ASQ16G72LSZ-3S2E1.
CMTD-341111752-10426 Micron Technology, Inc. reserves the right to change products or specifications without notice.
2
asq144c16gx72lsz.pdf - Rev. C 3/18 EN 2016 Micron Technology, Inc. All rights reserved.