128GB (x72, ECC, 3DS 4H Stack, 2 Package Ranks x 4 Logic Ranks) 288-Pin DDR4 LRDIMM Features DDR4 3DS SDRAM LRDIMM MTA144ASQ16G72LSZ 128GB Figure 1: 288-Pin LRDIMM (MO-309, R/C-B1) Features Module height: 31.25mm (1.23in) DDR4 functionality and operations supported as defined in the component data sheet 288-pin, command/address/control registered, data buffered, load-reduced dual in-line memory module (LRDIMM) Fast data transfer rates: PC4-2933, PC4-2666 Options Marking 128GB (16 Gig x 72) Operating temperature V = 1.20V (NOM) DD Commercial (0C T 95C) None OPER V = 2.5V (NOM) PP Package V = 2.5V (NOM) DDSPD 288-pin DIMM (halogen-free) Z Supports ECC error detection and correction Frequency/CAS latency Nominal and dynamic on-die termination (ODT) for 0.682ns CL = 24 (DDR4-2933) -2S9 data, strobe, and mask signals 0.75ns CL = 22 (DDR4-2666) -2S6 Low-power auto self refresh (LPASR) On-die internal, adjustable, V generation REFDQ 2 package ranks x 4 logic ranks 2 On-board I C temperature sensor with integrated serial presence-detect (SPD) EEPROM 32Gb, 3DS 4-high die stack x4 package, Master/Slave control logic. Each die with 16 internal banks 4 groups of 4 banks each Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) Selectable BC4 or BL8 on-the-fly (OTF) Gold edge contacts Halogen-free Fly-by topology Multiplexed command and address bus Terminated control, command and address bus Table 1: Key Timing Parameters Data Rate (MT/s) CL = t t t Speed 28 RCD RP RC Grade PC4- 26 25 24 24 22 22 20 20 18 16 14 ns ns ns -3S2 3200 3200 2666 2666 2400 2400 2133 2133 1866 1600 13.75 13.75 45.75 -2S9 2933 2933 2933 2666 2666 2400 2400 2133 2133 1866 1600 14.32 14.32 46.32 1 1 1 (14.06) (14.06) (46.06) CMTD-341111752-10426 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 asq144c16gx72lsz.pdf - Rev. D 1/19 EN 2016 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.128GB (x72, ECC, 3DS 4H Stack, 2 Package Ranks x 4 Logic Ranks) 288-Pin DDR4 LRDIMM Features Table 1: Key Timing Parameters (Continued) Data Rate (MT/s) CL = t t t Speed 28 RCD RP RC Grade PC4- 26 25 24 24 22 22 20 20 18 16 14 ns ns ns -2S6 2666 2666 2666 2400 2400 2133 2133 1866 1600 14.25 14.25 46.25 -2S3 2400 2400 2133 1866 1600 15 15 47 Note: 1. Down-bin timing, refer to component data sheet Speed Bin Tables for details. Table 2: Addressing Parameter 128GB Row address 128K A 16:0 Column address 1K A 9:0 Device bank group address 4 BG 1:0 Device bank address per group 4 BA 1:0 Device configuration 32Gb (128 Meg x 4 x 16 banks x4 ranks) Logic rank address 2 C 1:0 Package rank address 2 CS n 1:0 Table 3: Part Numbers and Timing Parameters 128GB Modules 1 Base device: MT40A8G4, 32Gb DDR4 4H 3DS M/S DRAM Module Module Memory Clock/ Clock Cycles 2 Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) n n MTA144ASQ16G72LSZ-2S9 128GB 16 Gig x 72 23.47 GB/s 0.682ns/2933 MT/s 24-21-21 MTA144ASQ16G72LSZ-2S6 128GB 16 Gig x 72 21.3 GB/s 0.75ns/2666 MT/s 22-19-19 Notes: 1. The data sheet for the base device can be found at micron.com. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MTA144ASQ16G72LSZ-2S9E1. CMTD-341111752-10426 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 asq144c16gx72lsz.pdf - Rev. D 1/19 EN 2016 Micron Technology, Inc. All rights reserved.