X-On Electronics has gained recognition as a prominent supplier of MTA16ATF4G64HZ-2G6B2 Memory Modules across the USA, India, Europe, Australia, and various other global locations. MTA16ATF4G64HZ-2G6B2 Memory Modules are a product manufactured by Micron. We provide cost-effective solutions for Memory Modules, ensuring timely deliveries around the world.

MTA16ATF4G64HZ-2G6B2 Micron

MTA16ATF4G64HZ-2G6B2 electronic component of Micron
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Part No.MTA16ATF4G64HZ-2G6B2
Manufacturer: Micron
Category: Memory Modules
Description: Memory Module DDR4 SDRAM 16GB 2.666GT/s 260-SODIMM
Datasheet: MTA16ATF4G64HZ-2G6B2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 100
Multiples : 100
100 : USD 276.3198
N/A

Obsolete
0
MOQ : 100
Multiples : 100
100 : USD 260.3127
N/A

Obsolete
   
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We are delighted to provide the MTA16ATF4G64HZ-2G6B2 from our Memory Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MTA16ATF4G64HZ-2G6B2 and other electronic components in the Memory Modules category and beyond.

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32GB (x64, DR) 260-Pin DDR4 SODIMM Introduction DDR4 SDRAM SODIMM Addendum MTA16ATF4G64HZ 32GB Figure 1: 260-Pin SODIMM Introduction Information provided here is in addition to or super- sedes information provided in the Micron DDR4 SO- U1 U2 U3 U4 DIMM Core data sheet. U7 U5 U6 U8 U9 Features DDR4 functionality and operations supported as defined in the component data sheet Primary Side Features and specifications supported in the Micron DDR4 SODIMM Core data sheet U10 U11 U12 U13 Fast data transfer rates: PC4-3200, PC4-2666 32GB (4 Gig x 64) Data bus inversion (DBI) for data bus U14 U15 U16 U17 Dual-rank 16 internal banks 4 groups of 4 banks each Secondary Side Options Marking Operating temperature Commercial (0C T 95C) None OPER Package 260-pin DIMM (halogen-free) Z Frequency/CAS latency 0.625ns CL = 22 (DDR4-3200) -3G2 0.75ns CL = 19 (DDR4-2666) -2G6 Table 1: Addressing Parameter 32GB Row address 128K A 16:0 Column address 1K A 9:0 Device bank group address 4 BG 1:0 Device bank address per group 4 BA 1:0 Device configuration 16Gb (2 Gig x 8), 16 banks Module rank address 2 CS n 1:0 CCM005-341111752-10521 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 atf16c4gx64hz.pdf Rev. G 08/2020 EN 2019 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.32GB (x64, DR) 260-Pin DDR4 SODIMM Introduction Table 2: Part Numbers and Timing Parameters 32GB Modules 1 Base device: MT40A2G8, 16Gb DDR4 SDRAM Module Module Memory Clock/ Clock Cycles 2 Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) n n MTA16ATF4G64HZ-3G2 32GB 4 Gig x 64 25.6 GB/s 0.625ns/3200 MT/s 22-22-22 MTA16ATF4G64HZ-2G6 32GB 4 Gig x 64 21.3 GB/s 0.75ns/2666 MT/s 19-19-19 Notes: 1. The data sheet for the base device can be found on micron.com. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MTA16ATF4G64HZ-3G2E1. CCM005-341111752-10521 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 atf16c4gx64hz.pdf Rev. G 08/2020 EN 2019 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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