X-On Electronics has gained recognition as a prominent supplier of MTA36ASS4G72PF1Z-2G9PR1AB Memory Modules across the USA, India, Europe, Australia, and various other global locations. MTA36ASS4G72PF1Z-2G9PR1AB Memory Modules are a product manufactured by Micron. We provide cost-effective solutions for Memory Modules, ensuring timely deliveries around the world.

MTA36ASS4G72PF1Z-2G9PR1AB Micron

MTA36ASS4G72PF1Z-2G9PR1AB electronic component of Micron
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Part No.MTA36ASS4G72PF1Z-2G9PR1AB
Manufacturer: Micron
Category: Memory Modules
Description: Memory Module DDR4 SDRAM 32GB 2.933GT/s 288-NVDIMM
Datasheet: MTA36ASS4G72PF1Z-2G9PR1AB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MOQ : 60
Multiples : 60
60 : USD 1465.1281
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Obsolete
0

Multiples : 1
N/A

Obsolete
   
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We are delighted to provide the MTA36ASS4G72PF1Z-2G9PR1AB from our Memory Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MTA36ASS4G72PF1Z-2G9PR1AB and other electronic components in the Memory Modules category and beyond.

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32GB (x72, ECC, TwinDie, DR) 288-Pin DDR4 NVRDIMM Features DDR4 SDRAM NVRDIMM MTA36ASS4G72PF1Z 32GB Battery-free power source (ultra capacitor based Features PowerGEM) Nonvolatile registered DIMM (NVRDIMM) Powers the Micron NVDIMM when the host sys- Highly reliable nonvolatile memory solution tem loses power DDR4 RDIMM, NAND Flash, and PowerGEM 5-year operating life management integrated in a single module No catastrophic failure modes Persistent energy source options RoHS-, REACH-, and UL-compliant Nonvolatile memory (NVM) system-level features Option 1: Battery-free power source (Power- In-system health monitoring of PowerGEM and GEM) NAND Flash Option 2: Persistent DDR4 12V pin Automatic history tracking: tracks critical inter- 32GB (4 Gig x 72) DDR4 RDIMM nal system parameters 64GB SLC Flash Interlocked control sequence for safe and reliable DDR4 functionality and operations supported as operation (system protocol) defined in the component data sheet 2 I C command/control bus JEDEC-compliant DDR4 288-pin dual in-line Multiple backup trigger methods memory module connector Fast data transfer rate: PC4-2933 ADR, SAVE n (DDR4 pin 230) assert, pull up to V = 1.20V (typical) 2.5V through resistor on the NVDIMM DD V = 2.5V (typical) PP RESET n (DDR4 pin 58) V = 2.22.8V DDSPD SMBus command Supports ECC error detection and correction Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals Figure 1: 288-Pin NVDIMM (PCB 2562) Low-power auto self refresh (LPASR) Module height: 31.25mm (1.23in) On-die V generation and calibration REFDQ Dual-rank, comprised of TwinDie, x4 DRAM components 2 On-board I C temperature sensor with integrated serial presence-detect (SPD) EEPROM 16 internal banks 4 groups of 4 banks each Fixed burst chop (BC) of 4 and burst length (BL) Options Marking of 8 via the mode register set (MRS) Operating temperature Selectable BC4 or BL8 on-the-fly (OTF) Commercial (0C T +95C) None OPER Gold edge contacts Storage (25C T +125C) STG Halogen-free Package Fly-by topology 288-pin DIMM (halogen-free) Z Terminated control, command, and address bus Frequency/CAS latency 0.68ns CL = 21 (DDR4-2933) -2G9 CCM005-341111752-10458 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 ass36c4gx72pf1z.pdf - Rev. B 04/2020 EN 2019 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.32GB (x72, ECC, TwinDie, DR) 288-Pin DDR4 NVRDIMM Features Table 1: Key Timing Parameters Data Rate (MT/s) CL = t t t 20 18 16 14 12 10 RCD RP RC PC4- 24 22 21 19 17 15 13 11 9 ns ns ns -3G2 3200 3200, 3200, 2933 2666 2400 2133 1866 1600 1333 13.75 13.75 45.75 2933 2933 2666 2400 2133 1866 1600 -2G9 2933 2933 2933 2666 2400 2133 1866 1600 1333 14.32 14.32 46.32 1 1 1 2666 2400 2133 1866 1600 (13.75) (13.75) (45.75) -2G6 2666 2666 2400 2133 1866 1600 1333 14.25 14.25 46.25 1 1 1 2666 2400 2133 1866 1600 (13.75) (13.75) (45.75) -2G3 2400 2400 2133 1866 1600 1333 14.16 14.16 46.16 1 1 1 2400 2133 1866 1600 (13.75) (13.75) (45.75) -2G1 2133 2133 1866 1600 1333 14.06 14.06 47.06 1 1 1 2133 1866 1600 1333 (13.5) (13.5) (46.5) Note: 1. Down-bin timing, refer to component data sheet Speed Bin Tables for details. Table 2: Addressing Parameter 32GB Row address 128K A 16:0 Column address 1K A 9:0 Device bank group address 4 BG 1:0 Device bank address per group 4 BA 1:0 Device configuration 16Gb TwinDie (4 Gig x 4), 16 banks Module rank address 2 CS n 1:0 Table 3: Part Numbers and Timing Parameters 32GB Modules 1 Base device: MT40A4G4, 16Gb TwinDie DDR4 SDRAM Module Module Memory Clock/ Clock Cycles Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) n n MTA36ASS4G72PF1Z-2G9 32GB 4 Gig x 72 23.47 GB/s 0.68ns/2933 MT/s 21-21-21 Notes: 1. The data sheet for the base device can be found on micron.com. 2. All NVDIMM part numbers end with a five-character code (not shown) that designates die revision, PCB revi- sion and controller type. Consult factory for current revision/controller codes. Example: MTA36ASS4G72PF1Z-2G9PR1AB. CCM005-341111752-10458 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 ass36c4gx72pf1z.pdf - Rev. B 04/2020 EN 2019 Micron Technology, Inc. All rights reserved. Speed Grade

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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