8GB (x64, SR) 260-Pin DDR4 SODIMM
Features
DDR4 SDRAM SODIMM
MTA8ATF1G64HZ 8GB
Figure 1: 260-Pin SODIMM (MO-310 R/C A1, R/C
Features
A2)
DDR4 functionality and operations supported as
Module Height: 30mm (1.181in)
defined in the component data sheet
260-pin, small-outline dual in-line memory module
(SODIMM)
Fast data transfer rates: PC4-3200, PC4-2666, or
PC4-2400
8GB (1 Gig x 64)
V = 1.20V (NOM)
DD
V = 2.5V (NOM)
PP
V = 2.5V (NOM)
DDSPD
Nominal and dynamic on-die termination (ODT) for
Options Marking
data, strobe, and mask signals
Operating temperature
Low-power auto self refresh (LPASR) Commercial (0C T 95C) None
OPER
Package
Data bus inversion (DBI) for data bus
260-pin DIMM (halogen-free) Z
On-die V generation and calibration
REFDQ
Frequency/CAS latency
Single-rank
0.62ns @ CL = 22 (DDR4-3200) -3G2
2
On-board I C serial presence-detect (SPD) EEPROM
0.75ns @ CL = 19 (DDR4-2666) -2G6
16 internal banks; 4 groups of 4 banks each
0.83ns @ CL = 17 (DDR4-2400) -2G3
Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
Selectable BC4 or BL8 on-the-fly (OTF)
Gold edge contacts
Halogen-free
Fly-by topology
Terminated control command and address bus
Table 1: Key Timing Parameters
Data Rate (MT/s)
CL =
t t t
20 \ 18 \ 16 \ 14 \ 12 \ 10 \ RCD RP RC
PC4- 24 22 21 19 17 15 13 11 9 (ns) (ns) (ns)
-3G2 3200 3200, 3200, 2933 2666 \ 2400 \ 2133 \ 1866 \ 1600 \ 1333 \ 13.75 13.75 45.75
2933 2933 2666 2400 2133 1866 1600
-2G9 2933 2933 2933 2666 \ 2400 \ 2133 \ 1866 \ 1600 \ 1333 \ 14.32 14.32 46.32
1 1 1
2666 2400 2133 1866 1600 (13.75) (13.75) (45.75)
-2G6 2666 2666 \ 2400 \ 2133 \ 1866 \ 1600 \ 1333 \ 14.25 14.25 46.25
1 1 1
2666 2400 2133 1866 1600 (13.75) (13.75) (45.75)
CCMTD-1725822587-9885 Micron Technology, Inc. reserves the right to change products or specifications without notice.
1
atf8c1gx64hz.pdf Rev. J 10/18 EN 2015 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
Speed
Grade8GB (x64, SR) 260-Pin DDR4 SODIMM
Features
Table 1: Key Timing Parameters (Continued)
Data Rate (MT/s)
CL =
t t t
20 \ 18 \ 16 \ 14 \ 12 \ 10 \ RCD RP RC
PC4- 24 22 21 19 17 15 13 11 9 (ns) (ns) (ns)
-2G3 2400 2400 \ 2133 \ 1866 \ 1600 \ 1333 \ 14.16 14.16 46.16
1 1 1
2400 2133 1866 1600 (13.75) (13.75) (45.75)
-2G1 2133 2133 \ 1866 \ 1600 \ 1333 \ 14.06 14.06 47.06
1 1 1
2133 1866 1600 1333 (13.5) (13.5) (46.5)
Note: 1. Down-bin timing, refer to component data sheet Speed Bin Tables for details.
Table 2: Addressing
Parameter 8GB
Row address 64K A[15:0]
Column address 1K A[9:0]
Device bank group address 4 BG[1:0]
Device bank address per group 4 BA[1:0]
Device configuration 8Gb (1 Gig x 8), 16 banks
Module rank address CS0_n
Table 3: Part Numbers and Timing Parameters 8GB Modules
1
Base device: MT40A1G8, 8Gb DDR4 SDRAM
Module Module Memory Clock/ Clock Cycles
2 t t
Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP)
MTA8ATF1G64HZ-3G2__ 8GB 1 Gig x 64 25.6 GB/s 0.62ns/3200 MT/s 22-22-22
MTA8ATF1G64HZ-2G6__ 8GB 1 Gig x 64 21.3 GB/s 0.75ns/2666 MT/s 19-19-19
MTA8ATF1G64HZ-2G3__ 8GB 1 Gig x 64 19.2 GB/s 0.83ns/2400 MT/s 17-17-17
Notes: 1. The data sheet for the base device can be found on micron.com.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions.
Consult factory for current revision codes. Example: MTA8ATF1G64HZ-3G2J1.
CCMTD-1725822587-9885 Micron Technology, Inc. reserves the right to change products or specifications without notice.
2
atf8c1gx64hz.pdf Rev. J 10/18 EN 2015 Micron Technology, Inc. All rights reserved.
Speed
Grade