8GB (x72, ECC, SR) 288-Pin DDR4 UDIMM
Features
DDR4 SDRAM UDIMM
MTA9ASF1G72AZ 8GB
Figure 1: 288-Pin UDIMM (MO-309, R/C D1)
Features
Module height: 31.25mm (1.23in)
DDR4 functionality and operations supported as de-
fined in the component data sheet
288-pin, unbuffered dual in-line memory module
(UDIMM)
Fast data transfer rates: PC4-2666 and PC4-2400
8GB (1 Gig x 72)
Options Marking
V = 1.20V (NOM)
DD
Operating temperature
V = 2.5V (NOM)
PP
Commercial None
V = 2.5V (NOM)
DDSPD
(0C T 95C)
OPER
Supports ECC error detection and correction
Package
Nominal and dynamic on-die termination (ODT) for 288-pin DIMM (halogen-free) Z
data, strobe, and mask signals Frequency/CAS latency
0.75ns @ CL = 19 (DDR4-2666) -2G6
Low-power auto self refresh (LPASR)
0.83ns @ CL = 17 (DDR4-2400) -2G3
Data bus inversion (DBI) for data bus
On-die V generation and calibration
REFDQ
Single-rank
2
On-board I C temperature sensor with integrated
serial presence-detect (SPD) EEPROM
16 internal banks; 4 groups of 4 banks each
Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
Selectable BC4 or BL8 on-the-fly (OTF)
Gold edge contacts
Halogen-free
Fly-by topology
Terminated control, command, and address bus
Table 1: Key Timing Parameters
Data Rate (MT/s)
CL =
Industry 20,
t t t
Speed Nomen- CL = CL = CL = CL = CL = CL = CL = CL = CL = CL = RCD RP RC
Grade clature 19 18 17 16 15 14 13 12 11 10 CL = 9 (ns) (ns) (ns)
-2G6 PC4-2666 2666 2666 2400 2133 2133 1866 1866 1600 1333 14.16 14.16 46.16
-2G4 PC4-2400 2400 2400 2400 2133 1866 1866 1600 1600 1333 13.32 13.32 45.32
-2G3 PC4-2400 2400 2400 2133 2133 1866 1866 1600 1600 1333 14.16 14.16 46.16
-2G1 PC4-2133 2133 2133 1866 1866 1600 1600 1333 13.5 13.5 46.5
PDF: 09005aef864bc2a8 Micron Technology, Inc. reserves the right to change products or specifications without notice.
1
asf9c1gx72az.pdf Rev. C 1/16 EN 2015 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.8GB (x72, ECC, SR) 288-Pin DDR4 UDIMM
Features
Table 2: Addressing
Parameter 8GB
Row address 64K A[15:0]
Column address 1K A[9:0]
Device bank group address 4 BG[1:0]
Device bank address per group 4 BA[1:0]
Device configuration 8Gb (1 Gig x 8), 16 banks
Module rank address CS0_n
Table 3: Part Numbers and Timing Parameters 8GB Modules
1
Base device: MT40A1G8, 8Gb DDR4 SDRAM
Module Module Memory Clock/ Clock Cycles
2 t t
Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP)
MTA9ASF1G72AZ-2G6__ 8GB 1 Gig x 72 21.3 GB/s 0.75ns/2666 MT/s 19-19-19
MTA9ASF1G72AZ-2G3__ 8GB 1 Gig x 72 19.2 GB/s 0.83ns/2400 MT/s 17-17-17
Notes: 1. The data sheet for the base device can be found at micron.com.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con-
sult factory for current revision codes. Example: MTA9ASF1G72AZ-2G3B1.
PDF: 09005aef864bc2a8 Micron Technology, Inc. reserves the right to change products or specifications without notice.
2
asf9c1gx72az.pdf Rev. C 1/16 EN 2015 Micron Technology, Inc. All rights reserved.