M510DC 2.5-Inch NAND Flash SSD
Features
M510DC 2.5-Inch TCG Enterprise SATA
NAND Flash SSD
MTFDDAK120MBP, MTFDDAK240MBP, MTFDDAK480MBP,
MTFDDAK600MBP, MTFDDAK800MBP, MTFDDAK960MBP
Reliability
Features
3
MTTF: 2.0 million device hours
Micron 16nm MLC NAND Flash
Static and dynamic wear leveling
SATA 6 Gb/s interface
Uncorrectable bit error rate (UBER): <1 sector
16
TCG Enterprise Ver 1.0 Final Rev 3.0 compliant self-
per 10 bits read
encrypting drive (SED)
End-to-end data protection
ATA modes supported
Enhanced power-loss data protection with data
PIO mode 3, 4
protection capacitor monitoring
Multiword DMA mode 0, 1, 2
Self-monitoring, analysis, and reporting technology
Ultra DMA mode 0, 1, 2, 3, 4, 5, 6
(SMART) command set
512-byte sector size support
Endurance: Total bytes written (TBW)
Hot-plug capable
120GB: 460TB; 240GB: 920TB; 480GB: 1850TB;
Native command queuing support with 32-com-
600GB: 3800TB; 800GB: 2500TB; 960GB: 1140TB
4
mand slot support
Capacity (unformatted): 120GB, 240GB, 480GB,
ATA-8 ACS2 command set compliant
600GB, 800GB, 960GB
ATA security feature command set and password
Mechanical: 7.0mm height
login support
SATA connector: 5V 10%
Security erase command set: fast and secure erase
2.5-inch drive: 100.45mm x 69.85mm x 7.0mm
1, 2
120GB performance (steady state)
Conforms to SFF standards
Sequential 128KB read/write: 420/170 MB/s
RoHS-compliant package
Random 4KB read/write: 63,000/12,000 IOPS
Field-upgradeable firmware
READ/WRITE latency: 0.50/3.0ms (TYP)
Power consumption: <6.0W (TYP); <6.3W (TYP) for
1, 2
240GB performance (steady state)
600GB/800GB/960GB
Sequential 128KB read/write: 420/290 MB/s
Operating temperature
5
Random 4KB read/write: 63,000/18,000 IOPS
Commercial (0C to 70C)
READ/WRITE latency: 0.50/2.0ms (TYP)
1, 2
480GB performance (steady state)
1. Typical I/O performance numbers as meas-
Notes:
Sequential 128KB read/write: 420/380 MB/s ured using Iometer with a queue depth of
32 and write cache disabled.
Random 4KB read/write: 63,000/23,000 IOPS
READ/WRITE latency: 0.50/2.0ms (TYP) 2. 4KB transfers used for READ/WRITE latency
1, 2
values.
600GB performance (steady state)
3. The product achieves a MTTF based on pop-
Sequential 128KB read/write: 420/380 MB/s
ulation statistics not relevant to individual
Random 4KB read/write: 65,000/40,000 IOPS
units.
READ/WRITE latency: 0.50/1.0ms (TYP)
1, 2
4. 1GB = 1 billion bytes; formatted capacity is
800GB performance (steady state)
less.
Sequential 128KB read/write: 420/380 MB/s
5. Drive case temperature.
Random 4KB read/write: 65,000/30,000 IOPS
READ/WRITE latency: 0.50/1.5ms (TYP)
Warranty: Contact your Micron sales representative
1, 2
960GB performance (steady state)
for further information regarding the product,
Sequential 128KB read/write: 420/380 MB/s
including product warranties.
Random 4KB read/write: 65,000/10,500 IOPS
READ/WRITE latency: 0.50/3.0ms (TYP)
09005aef8633b239 Micron Technology, Inc. reserves the right to change products or specifications without notice.
1
M510DC_2_5_tcge.pdf - Rev. F 9/16 EN 2015 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.M510DC 2.5-Inch NAND Flash SSD
Features
Part Numbering Information
This device is available in different configurations and densities. Visit micron.com for a list of valid part numbers.
Figure 1: Part Number Chart
MT FD D AK 120 M BP - 1 AN 1 6 AB YY ES
Production Status
Micron Technology
Blank = Production
ES = Engineering sample
Product Family
FD = Flash drive
Customer Designator
YY = Standard
Drive Interface
D = SATA 6.0 Gb/s
Hardware Features
AB = Standard
Drive Form Factor
AK = 2.5-inch (7mm)
Extended Firmware Features
6 = TCG Enterprise 1.0
Drive Density
Self-encrypting drive (SED)
120 = 120GB
240 = 240GB
Sector Size
480 = 480GB
1 = 512 byte
600 = 600GB
800 = 800GB
NAND Flash Component
960 = 960GB
AN = 128Gb, MLC, x8, 3.3V (16nm)
NAND Flash Type
BOM Revision
M = MLC
For example:
1 = 1st generation
Product Family
2 = 2nd generation
BP = M510DC
09005aef8633b239 Micron Technology, Inc. reserves the right to change products or specifications without notice.
2
M510DC_2_5_tcge.pdf - Rev. F 9/16 EN 2015 Micron Technology, Inc. All rights reserved.