X-On Electronics has gained recognition as a prominent supplier of N25Q00AA11G1240E NOR Flash across the USA, India, Europe, Australia, and various other global locations. N25Q00AA11G1240E NOR Flash are a product manufactured by Micron. We provide cost-effective solutions for NOR Flash, ensuring timely deliveries around the world.

N25Q00AA11G1240E Micron

N25Q00AA11G1240E electronic component of Micron
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Part No.N25Q00AA11G1240E
Manufacturer: Micron
Category: NOR Flash
Description: NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 1G-bit 1G/512M/256M x 1/2-bit/4-bit 9ns 24-Pin LBGA Tray
Datasheet: N25Q00AA11G1240E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
240: USD 10.1269 ea
Line Total: USD 2430.46 
Availability - 0
MOQ: 240  Multiples: 240
Pack Size: 240
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 240
Multiples : 240
240 : USD 10.1269

   
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We are delighted to provide the N25Q00AA11G1240E from our NOR Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the N25Q00AA11G1240E and other electronic components in the NOR Flash category and beyond.

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1Gb, 1.8V, Multiple I/O Serial NOR Flash Memory Features Micron Serial NOR Flash Memory 1.8V, Multiple I/O, 4KB Sector Erase N25Q00AA Write protection Features Software write protection applicable to every Stacked device (four 256Mb die) 64KB sector via volatile lock bit SPI-compatible serial bus interface Hardware write protection: protected area size Double transfer rate (DTR) mode defined by five nonvolatile bits (BP0, BP1, BP2, 1.72.0V single supply voltage BP3, and TB) 108 MHz (MAX) clock frequency supported for all Additional smart protections, available upon re- protocols in single transfer rate (STR) mode quest 54 MHz (MAX) clock frequency supported for all Electronic signature protocols in DTR mode JEDEC-standard 2-byte signature (BB21h) Dual/quad I/O instruction provides increased Unique ID code (UID): 17 read-only bytes, throughput up to 54 MB/s including: Two additional extended device ID Supported protocols bytes to identify device factory options and cus- Extended SPI, dual I/O, and quad I/O tomized factory data (14 bytes) DTR mode supported on all Minimum 100,000 ERASE cycles per sector Execute-in-place (XIP) mode for all three protocols More than 20 years data retention Configurable via volatile or nonvolatile registers Packages JEDEC-standard, all RoHS-compliant Enables memory to work in XIP mode directly af- L-PBGA-24b05/6mm x 8mm ( also known as ter power-on LBGA24 ) PROGRAM/ERASE SUSPEND operations SOP2-16/300 mils (also known as SO16W, SO16- Available protocols Wide, SOIC-16) Available READ operations Quad or dual output fast read Quad or dual I/O fast read Flexible to fit application Configurable number of dummy cycles Output buffer configurable Software reset 3-byte and 4-byte addressability mode supported 64-byte, user-lockable, one-time programmable (OTP) dedicated area Erase capability Subsector erase 4KB uniform granularity blocks Sector erase 64KB uniform granularity blocks Single die erase (32MB) PDF: 09005aef848fed18 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 n25q 1gb q1 8V 65nm.pdf - Rev. M 05/14 EN 2011 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.1Gb, 1.8V, Multiple I/O Serial NOR Flash Memory Features Contents Device Description ........................................................................................................................................... 6 Features ....................................................................................................................................................... 6 3-Byte Address and 4-Byte Address Modes ..................................................................................................... 6 Operating Protocols ...................................................................................................................................... 6 XIP Mode ..................................................................................................................................................... 7 Device Configurability .................................................................................................................................. 7 Signal Assignments ........................................................................................................................................... 8 Signal Descriptions ........................................................................................................................................... 9 Memory Organization .................................................................................................................................... 11 Memory Configuration and Block Diagram .................................................................................................. 11 Memory Map 1Gb Density ............................................................................................................................ 12 Device Protection ........................................................................................................................................... 13 Serial Peripheral Interface Modes .................................................................................................................... 16 SPI Protocols .................................................................................................................................................. 18 Nonvolatile and Volatile Registers ................................................................................................................... 19 Status Register ............................................................................................................................................ 20 Nonvolatile and Volatile Configuration Registers .......................................................................................... 21 Extended Address Register .......................................................................................................................... 24 Enhanced Volatile Configuration Register .................................................................................................... 25 Flag Status Register ..................................................................................................................................... 26 Command Definitions .................................................................................................................................... 28 READ REGISTER and WRITE REGISTER Operations ........................................................................................ 31 READ STATUS REGISTER or FLAG STATUS REGISTER Command ................................................................ 31 READ NONVOLATILE CONFIGURATION REGISTER Command ................................................................... 32 READ VOLATILE or ENHANCED VOLATILE CONFIGURATION REGISTER Command .................................. 32 READ EXTENDED ADDRESS REGISTER Command ..................................................................................... 33 WRITE STATUS REGISTER Command ......................................................................................................... 33 WRITE NONVOLATILE CONFIGURATION REGISTER Command ................................................................. 34 WRITE VOLATILE or ENHANCED VOLATILE CONFIGURATION REGISTER Command ................................. 34 WRITE EXTENDED ADDRESS REGISTER Command ................................................................................... 35 READ LOCK REGISTER Command .............................................................................................................. 35 WRITE LOCK REGISTER Command ............................................................................................................ 36 CLEAR FLAG STATUS REGISTER Command ................................................................................................ 37 READ IDENTIFICATION Operations ............................................................................................................... 38 READ ID and MULTIPLE I/O READ ID Commands ...................................................................................... 38 READ SERIAL FLASH DISCOVERY PARAMETER Command ......................................................................... 39 READ MEMORY Operations ............................................................................................................................ 43 3-Byte Address ........................................................................................................................................... 43 4-Byte Address ........................................................................................................................................... 44 READ MEMORY Operations Timing Single Transfer Rate ........................................................................... 46 READ MEMORY Operations Timing Double Transfer Rate ......................................................................... 50 PROGRAM Operations .................................................................................................................................... 54 WRITE Operations .......................................................................................................................................... 59 WRITE ENABLE Command ......................................................................................................................... 59 WRITE DISABLE Command ........................................................................................................................ 59 ERASE Operations .......................................................................................................................................... 61 SUBSECTOR ERASE Command ................................................................................................................... 61 SECTOR ERASE Command ......................................................................................................................... 61 DIE ERASE Command ................................................................................................................................ 62 PROGRAM/ERASE SUSPEND Command ..................................................................................................... 63 PDF: 09005aef848fed18 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 n25q 1gb q1 8V 65nm.pdf - Rev. M 05/14 EN 2011 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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